JPS58129A - Washing method for glass - Google Patents
Washing method for glassInfo
- Publication number
- JPS58129A JPS58129A JP56098543A JP9854381A JPS58129A JP S58129 A JPS58129 A JP S58129A JP 56098543 A JP56098543 A JP 56098543A JP 9854381 A JP9854381 A JP 9854381A JP S58129 A JPS58129 A JP S58129A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- polyvinyl alcohol
- cleaning
- dust
- glass surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011521 glass Substances 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims description 12
- 238000005406 washing Methods 0.000 title abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000001035 drying Methods 0.000 claims abstract description 10
- 239000004372 Polyvinyl alcohol Substances 0.000 claims abstract description 8
- 229920002451 polyvinyl alcohol Polymers 0.000 claims abstract description 8
- 239000007788 liquid Substances 0.000 claims abstract description 3
- 238000004140 cleaning Methods 0.000 claims description 14
- 239000000428 dust Substances 0.000 abstract description 8
- 239000002120 nanofilm Substances 0.000 abstract description 3
- 239000007864 aqueous solution Substances 0.000 abstract 2
- 239000002245 particle Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 241000219122 Cucurbita Species 0.000 description 2
- 235000009852 Cucurbita pepo Nutrition 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- -1 silver halide Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Cleaning In General (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】 本発明はガラスの洗浄方法に係る。[Detailed description of the invention] The present invention relates to a method for cleaning glass.
従来洗浄し九ガラス等の表面を乾燥するのに。Conventionally used for cleaning and drying surfaces such as nine glasses.
大気中または窒素中で自然乾燥するとこれらの気体の中
に含まれる物質が乾燥途中の水に溶は込み、乾燥後、ガ
ラス真向に残るという問題点があった。When air-dried in the air or in nitrogen, there is a problem that substances contained in these gases dissolve into the water during drying and remain directly opposite the glass after drying.
そこで、この改良法としてエアーガン、エアーナイフ等
で乾燥窒素を吹きつける方法があるが、この方法では急
速な気流によシ塵が多く付着したり、気流により巻き上
つ九本が４〜５趨の大きさの水滴となって付着してその
まま乾かず、粒子の無い清浄な表面が得られないという
問題点があった。Therefore, as an improvement method, there is a method of blowing dry nitrogen with an air gun, air knife, etc. However, with this method, a lot of dust may adhere due to the rapid airflow, and the nine particles that are rolled up by the airflow may become 4 to 5 points. There was a problem in that water droplets of a size of 100 mL adhered to the surface and did not dry, making it impossible to obtain a clean surface free of particles.
そこで本発明は、上記問題点を除去する目的で、洗浄後
の乾燥が自然乾燥よシ速く、それ故水滴に伴う塵の付着
の無い清浄な表面が得られる洗浄方法を提供する。SUMMARY OF THE INVENTION In order to eliminate the above-mentioned problems, the present invention provides a cleaning method in which drying after cleaning is faster than natural drying, and a clean surface free from dust attached to water droplets can therefore be obtained.
即ち本発明は、洗浄に先立ちガラスの表面にポリビニー
ルアルコール水溶液を塗布する工程、該ガラスを熱処理
する工程、該ガラスの表面を水を含む液体により摩擦洗
浄する工場、該ガラスの表面を乾燥する工程を有すると
とを特徴とするガラスの洗浄方法である。That is, the present invention includes a step of applying an aqueous polyvinyl alcohol solution to the surface of the glass prior to cleaning, a step of heat-treating the glass, a factory in which the surface of the glass is friction-cleaned with a liquid containing water, and a step of drying the surface of the glass. 1 is a method of cleaning glass characterized by the steps of:
以下本発明の一実施例を説明する。 ゛本実
施例ではガラスとして半導体素子製造に用いるマスク（
ガラス板表面に部分食刻されたクロム膜または３１ｍさ
れたハロゲン化銀とゼラテ／のエマルジ曹ン膜を形成し
たもの一中の１））を用い、洗浄にはマスク洗浄機（ス
ポンジで自動的に洗剤と共に摩擦し、純水でゆすぎ、エ
アナイフで乾燥するもの）からエアナイフの配管を外し
たものを用いて行なっている。マスクは直接半導体に接
触し、微少な汚れもフォ） １７ノグラフイの際牛導体
に転写されるので特に汚れの無い清浄な表面が要求され
る。An embodiment of the present invention will be described below.゛In this example, the mask used for manufacturing semiconductor devices as glass (
A mask cleaning machine (one of the types 1) in which a partially etched chromium film or a 31m thick silver halide and gelate/carbon emulsion film is formed on the surface of the glass plate is used for cleaning. This is done using a knife with the air knife piping removed from a knife that is rubbed with detergent, rinsed with pure water, and dried with an air knife. Since the mask is in direct contact with the semiconductor and even the slightest dirt is transferred onto the conductor during printing, a clean surface without any dirt is required.
たマスク洗浄機で洗浄する工程及び自然乾燥の工程より
なる 普通のぬれたガラスを自然乾燥すると４０分位か
かるが、本発明の前処理を行って洗浄したマスクの表面
は、エアナイフを当てなくても図（３）の様に水の膜２
が矢印３の様にして１０数秒で収−し乾燥してしまう。It takes about 40 minutes to air-dry ordinary wet glass, but the surface of the mask cleaned with the pretreatment of the present invention can be cleaned without applying an air knife. As shown in Figure (3), the water film 2
However, as shown by arrow 3, it is collected and dried in about 10 seconds.
この為、空気中の成分の溶は込みによるしみや、エアナ
イフの使用による水滴や瓢の付着などが見られない。淘
、熱処理は必ず必要で、これを行わないと洗浄後の乾燥
が早くならない。For this reason, there are no stains caused by dissolution of components in the air, and no water droplets or gourd adhesion caused by the use of an air knife. Tempering and heat treatment are absolutely necessary, and if they are not done, drying after washing will not be quick.
第−表は５インチ四方のマスクをポリビニールアルコー
ルを塗布せずに自然乾燥し九場合、及びポリビニールア
ルコールを塗布せずにエアナイフを当て九場合、及び本
発明の方法によシ乾燥させた場合につき、表面の数ｓｍ
以上の塵や水滴を７オトマスク自動検査装置で計数し九
結果である。Table 1 shows 5-inch square masks that were air-dried without applying polyvinyl alcohol, 9 times with an air knife applied without applying polyvinyl alcohol, and 9 times dried by the method of the present invention. In each case, the number of surfaces sm
The above dust and water droplets were counted using a 7 otomask automatic inspection device and the results were 9.
本発明の洗浄方法によυ洗浄し九表向は、表面の粒子が
着しく少い事がわかる。It can be seen that the particles on the surface of the surface cleaned by the cleaning method of the present invention are small.
この様に速く乾燥するわけは、推測ではあるが、ガラス
の表面にポリビニールアルコールの薄い分子膜が存在し
ている為であると思われる。その際ポリビニールアルコ
ールが塵の粒子を覆っていても洗浄後に清浄な表面が得
られるのは、瓢の粒子の方が分子膜の厚さよ）も大きい
為、塵の粒子は洗浄時にとすシ取られるものと推測され
る。Although it is only a matter of speculation, the reason why it dries so quickly is thought to be due to the presence of a thin molecular film of polyvinyl alcohol on the surface of the glass. At that time, even if the polyvinyl alcohol covers the dust particles, a clean surface can be obtained after cleaning because the particles of gourd have a larger molecular film (thickness). It is assumed that it will be taken.
本実施例に於てはフォトマスクについて述べたが、一般
のガラスにも応用可能である。In this embodiment, a photomask has been described, but it can also be applied to general glass.
本発明の洗浄方法によれば、乾燥時間が短いだけでなく
、水滴や塵の付着の無い、少くとも数μｍ以上の塵に関
して清浄なガラスの表面が得られる。According to the cleaning method of the present invention, not only the drying time is short, but also a glass surface that is clean with respect to dust of at least several μm or more can be obtained without adhesion of water droplets or dust.
Claims (1)
浴液を塗布する工程、該ガラスを熱処理する工場、該ガ
ラスの表面を水を含む液体により摩擦洗浄する工程、該
ガラスの表面を乾燥する工程を有することを特徴とする
ガラスの洗浄方法。Prior to cleaning, the method includes a step of applying a polyvinyl alcohol water bath solution to the surface of the glass, a factory that heat-treats the glass, a step of friction-cleaning the surface of the glass with a liquid containing water, and a step of drying the surface of the glass. A glass cleaning method characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56098543A JPS58129A (en) | 1981-06-25 | 1981-06-25 | Washing method for glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56098543A JPS58129A (en) | 1981-06-25 | 1981-06-25 | Washing method for glass |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58129A true JPS58129A (en) | 1983-01-05 |
| JPS632105B2 JPS632105B2 (en) | 1988-01-16 |
Family
ID=14222595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56098543A Granted JPS58129A (en) | 1981-06-25 | 1981-06-25 | Washing method for glass |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58129A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6396818A (en) * | 1986-10-13 | 1988-04-27 | 住友電装株式会社 | Harness assembling machine |
-
1981
- 1981-06-25 JP JP56098543A patent/JPS58129A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6396818A (en) * | 1986-10-13 | 1988-04-27 | 住友電装株式会社 | Harness assembling machine |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS632105B2 (en) | 1988-01-16 |
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