JPS58125868A - Color sensor - Google Patents
Color sensorInfo
- Publication number
- JPS58125868A JPS58125868A JP57009200A JP920082A JPS58125868A JP S58125868 A JPS58125868 A JP S58125868A JP 57009200 A JP57009200 A JP 57009200A JP 920082 A JP920082 A JP 920082A JP S58125868 A JPS58125868 A JP S58125868A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- face
- film
- filter
- elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims abstract 10
- 239000010409 thin film Substances 0.000 claims abstract 3
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 4
- 229910001887 tin oxide Inorganic materials 0.000 abstract description 4
- 230000005855 radiation Effects 0.000 abstract description 3
- 239000011521 glass Substances 0.000 abstract description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract description 2
- 229920003023 plastic Polymers 0.000 abstract description 2
- 239000004033 plastic Substances 0.000 abstract description 2
- 229910052738 indium Inorganic materials 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 239000012528 membrane Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 206010011224 Cough Diseases 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- -1 bits of gold Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000001953 sensory effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Spectrometry And Color Measurement (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はアモルファス半導体を光活性層に用いた色量ン
サーｖｃ関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a color sensor VC using an amorphous semiconductor as a photoactive layer.
光活性層に単結晶シリコンを用いた色−に／サーに既に
知らｎている。その原塩的な構成は、第１図に示す如く
、単結晶シリコン基板（１）表面に複数のフォトダイオ
ード領域＋２１．１３）、１４）を設けると共に、これ
ら各領域上に異なる色フィルタ、例えば赤色フィルタ（
５）、緑色フィルタ（６）及び青色フィルタ１７１ｔ−
配し、更にその上に赤外カットフィルタ（８）を配した
もので、斯るセンサーに於て、各フィルタを介して可視
元が基板１１１に入射すると、入射可視党の含む色に応
じて、そｎが赤ならダイオード領域１２Ｉに、縁ならダ
イオード領域１３）に、文責ならダイオード領域１４１
に夫々信号が出力さｎる。It is already known in the art that monocrystalline silicon is used in the photoactive layer. As shown in FIG. 1, its basic structure is to provide a plurality of photodiode regions +21, 13), 14) on the surface of a single crystal silicon substrate (1), and to apply different color filters on each of these regions, e.g. Red filter (
5), green filter (6) and blue filter 171t-
In such a sensor, when a visible source enters the substrate 111 through each filter, the infrared cut filter (8) is placed on top of the infrared cut filter (8). , If the n is red, it is placed in the diode area 12I, if it is the edge, it is placed in the diode area 13), and if it is written, it is placed in the diode area 141.
A signal is output to each.
単結晶シリコン自体の感光Ｉ［％ｔ！！：に第２図の曲
線ムに示す如く、赤外領域にピークを呈する。−万、赤
色フィルタ１５１ｒｆ赤色帯域で透過度のビークを示す
ものの、その帝域籍性の拡が９に通常減衰しながらも赤
外領域ｖｃｔですそ野【引いている。Photosensitivity I of single crystal silicon itself [%t! ! : exhibits a peak in the infrared region, as shown by the curve in FIG. - Although the red filter 151rf shows a peak in transmittance in the red band, its impermeability is normally attenuated to 9, but it is decreasing in the infrared region VCT.
従って光活性層に単結晶シリコンを用いた場合、赤色フ
ィルタを通すだけでは、フォトダイオード領域１２＋ｒ
ｉ、減衰しながらも共に入射する赤外党に、単結晶シリ
コン自体の感光［４１性に応じて強く）感応してしまい
、正４Ｍな色情報を検出できない、上記従来の色センサ
ーにおける赤外カットフィルタ１８１は、この様な入射
赤外元を除去するために設けられており、不可欠の存在
である。Therefore, when single-crystal silicon is used for the photoactive layer, simply passing the red filter through the photodiode region 12+r
i. The infrared radiation in the conventional color sensor described above cannot detect positive 4M color information because the monocrystalline silicon itself is sensitive to the infrared radiation that is attenuated but also incident (strongly depending on the 41 nature). The cut filter 181 is provided to remove such incident infrared sources, and is indispensable.
しかしながら、斯る赤外カットフィルタの存在にセンサ
ーの構成ｔ＊雑にするだけでなく、製造［ｆｆｌして、
そのフィルタをシリコン基板上に重畳被着する工程で脆
弱なシリコン基板を破損しやすいといった欠点をもたら
す。However, the presence of such an infrared cut filter not only complicates the sensor configuration, but also reduces the manufacturing process.
This method has the disadvantage that the process of superimposing the filter on the silicon substrate tends to damage the fragile silicon substrate.
本発明は上記の点に鑑みてなさｎたもので、以下本発明
ｔ−実施例において説明する。The present invention has been made in view of the above points, and will be described below in embodiments of the present invention.
第５図に本実施例としての赤、緑、宵の各色に感応する
色センサーσＯを示す、この色セン？−１１（１区厚さ
０．５１１１ｆａ［のガラスやプラスチックスなどから
なる透尤性基板ｕ１１Ｉ／ｃ設けらｆ’Ｌ７ｊＷＪ１．
ＪＩ２、＃！６の薄膜状感元本子（１２Ｒ）（１２Ｇ）
（１２Ｂ）を含む、これらの各感九素子は基板１Ｂの１
王面に設けらｆ′Ｌ几各素子に個有の色フィルタ膜、即
ち、第１感元素子（１２Ｒ１は赤色フィルタ膜（１３Ｒ
）、纂２感ｙｔｌＡ子（１２Ｇ）には緑色フィルタ膜（
１５Ｇ）、第５感党素子（１２Ｂ）には青色フィルタｌ
！（１３Ｂ）ｔ″有している。各フィルタ膜としてはイ
ーストマン・コダック社製のＶＲ＆ＴＴＢＭ ＧＩＬ
＆Ｔｌ１１Ｍ １１１１１’ｆ’１Ｒが好適であり、
赤色フィルタ膜（１３ｆ’ｊ）としてはそのＮＯ・２５
、緑色フィルタ膜（１３Ｇ）としてｒ！Ｎｏ−５８、又
青色７（ｋｇ膜（１３Ｂ）として［１０・４７Ｂの各品
番のものが用いらｎ、こｎらは例えはカナダパルサンな
どの透明樹脂接着材ｖｃニジ基板ａυ上に固着さｎる。FIG. 5 shows the color sensor σO sensitive to each color of red, green, and evening in this embodiment. -11 (1 section thickness 0.5111fa [transparent substrate u11I/c made of glass, plastics, etc. f'L7jWJ1.
JI2, #! 6. Thin film-like texture Motonko (12R) (12G)
Each of these nine elements, including (12B), is located on one side of the substrate 1B.
Each f′L element provided on the king surface has a unique color filter film, that is, the first sensitive element (12R1 is a red filter film (13R
), a green filter film (
15G), the fifth sensing element (12B) has a blue filter l.
! (13B)t''.Each filter membrane is VR&TTBM GIL manufactured by Eastman Kodak Company.
&Tl11M 11111'f'1R is suitable,
As the red filter film (13f'j), its No. 25
, as a green filter film (13G) r! No. 58, and blue 7 (kg film (13B)) [10 and 47B product numbers are used], these are fixed on a transparent resin adhesive VC, such as Canada Palsan, on a rainbow substrate aυ. Sanru.
落１〜第５感元素子（１２Ｒ）、（１２Ｇ）、（１２Ｂ
）の夫々は、更に基板（Ｉｌｌの他の工面に設けらｎた
ｊｌ！１電極膜１１４１． ｙｔ、活性層α９及び第２
電極膜叫の槓鳩体會備えており、これら積層体に夫々の
感光素子のフィルタ膜と個別に対問している。Drop 1 to 5th sensing element (12R), (12G), (12B
) are further provided on the other surface of the substrate (Ill) with an electrode film 1141.yt, an active layer α9 and a second
It is equipped with an electrode membrane assembly, and these laminated bodies are individually connected to the filter membranes of each photosensitive element.
上記ｊ１１１電極膜（１４１に酸化錫やインジウム・錫
酸化物などの透明導電物からなり、第２電極膜Ｑ８にア
ルミニウムなどからなる・
上記光活性ｐａａ”ｉｎ厚さ約１μＩのアモルファスシ
リコン半導体で構成されてい；ｂ、 ＄１造方法と共Ｋ
ＩＤ具体的に説明すると各素子（１２Ｒ）（１２Ｇ）（
１２Ｂ）の第１電極Ｉのみを形成済みの基板！Ｉυを反
応ＮＫ：納め、シランβスや不純物ガスからなるマ囲気
中でのグロー放電にニジ第１電極■上にアモルファスシ
リコンからなるＰＩＩＪＩ（１５ａ）、２１１層（１５
ｂ）及びＭａ１層（１５ｏ）を順次堆積して元活性層四
が形成される。その堆積領域はマスクの使用に１９所定
部分に限定し得る４のである。尚グロー放電ｖｃよる了
モル７アスシリコンダイオードの形成自体は持分１８５
３−３７７１８号公報に開示さｎている様に周知である
。The j111 electrode film (141 is made of a transparent conductor such as tin oxide or indium/tin oxide, and the second electrode film Q8 is made of aluminum etc.) The photoactive paa"in is made of an amorphous silicon semiconductor with a thickness of about 1 μI b, same as the $1 production method
ID To explain specifically, each element (12R) (12G) (
12B) A substrate on which only the first electrode I has been formed! PIIJI (15a) made of amorphous silicon and 211 layers (15
b) and the Ma1 layer (15o) are sequentially deposited to form the original active layer 4. The deposition area can be limited to 19 predetermined portions using a mask. Furthermore, the formation of a mol 7A silicon diode by glow discharge VC is worth 185 yen.
This is well known as disclosed in Japanese Patent No. 3-37718.
上記色センサ一＋１０ Ｋ ＊いて、各色フィルタＩＩ
Ｎ（１３Ｒ）、（１３Ｇ）、（１３Ｂ）１２）存在ｖｃ
Ｌ９、これらフィルタ４１！Ｉ工９人射する尤に、そｎ
が赤色ｉｔむ場合、赤色フィルタ１ｌＫ（１３Ｒ）及び
基板Ｕｔ−介して第１感党素子（１２Ｒ）Ｋ入り、咳素
子内の王にｘｌｌｍ（１５ｂ）で自由キャリアを発生せ
しめる。この自由キャリヤは第１、第２電極Ｉ、叫に集
められ、両電極間に電圧が発生する。Above color sensor 1 + 10K * and each color filter II
N(13R), (13G), (13B)12) Existence vc
L9, these filters 41! Of course, nine I-guns were shot.
When it is red, it enters the first sensing element (12R)K through the red filter 11K (13R) and the substrate Ut, and generates free carriers at xllm (15b) in the cough element. These free carriers are collected at the first and second electrodes I, and a voltage is generated between the two electrodes.
同様にして、入射光が緑色を含む場合、又青色を含む場
合、大々第２感元素子（１２Ｇ）、第３感元素子（１２
Ｂ）において第１、第２電極１載叫関に電圧が発生する
。１ってこれらの電圧を検出することに工り入射光の色
検出をなすことができる。Similarly, when the incident light contains green color or blue color, the second sensing element (12G) and the third sensing element (12G)
In B), a voltage is generated between the first and second electrodes 1. 1, the color of incident light can be detected by detecting these voltages.
アモルファス半導体の感兄度特性に１！２図の曲線Ｂに
示す如く、はとんど可視光領域に納まる帯域を有してい
る。このため、不実施別色センサー賎では、たとえ赤色
フィルタ膜（１３Ｒ）ｋ通して赤外元が入ったとしても
、そｒｔｒｚｔｔとんど検出さｎず、従って従来必要と
してい友赤外カットフィルターを用いることなく正確な
色情報を検出することができる。又、本実施例色センサ
ー［１（ＩＫあっては、各色フィルタ（１３Ｒ）、（１
，５Ｇ）、（１３Ｂ）は尤活ｅｍｕシとに反対側の基板
表面に取着さｎるので、その暇看時に元活性層０５１に
傷めることもない。As shown by curve B in Figure 1!2, the sensitivity characteristic of an amorphous semiconductor has a band that mostly falls within the visible light region. For this reason, with the non-implemented separate color sensor, even if infrared light enters through the red filter film (13R), it is hardly detected, and therefore an infrared cut filter, which is conventionally required, is not used. Accurate color information can be detected without using . In addition, the color sensor of this embodiment [1 (for IK, each color filter (13R), (1
, 5G), and (13B) are attached to the surface of the substrate opposite to the active emulator, so that they will not damage the original active layer 051 during leisure.
本発明実施例にこの様な優ｒｔた色センサー（１（ＤＣ
おいて、ｑ！ｒ素子の電極膜ｔ１４１、ｕｓと′電気的
に連なり、各素子の出力を処理する処理−ｗＩ（至）を
基板（ｉｌｌの１工面に設けている。In the embodiment of the present invention, such an excellent color sensor (1 (DC
Leave it, q! A process-wI (to) which is electrically connected to the electrode films t141 and us of the r element and processes the output of each element is provided on one side of the substrate (ill).
処理回路（至）と上記各電極膜との電気的接続は各電極
膜の１部ｔ−延長せる導電路（ハ）、（ロ）、・・・に
工り行なわｎている。父、基板ＣＩＩＫは処理回路１２
Ｇに遅なる電源熾子■及びアース端子−と、ｌ！に出力
瑞子（２４Ｒ）、（２４Ｇ）、（２４ｓ）が被着形成さ
れている。Electrical connection between the processing circuit (to) and each of the above-mentioned electrode films is made through conductive paths (c), (b), . . . extending from a portion of each electrode film. Father, the board CIIK is the processing circuit 12.
The power supply terminal ■ and the ground terminal -, which are delayed to G, and l! Output screws (24R), (24G), and (24s) are adhered to and formed on.
処理回路（７）の具体的構成Ｈ３Ｎ２図に示されており
、第１、第２、第３の各感光素子（１２Ｒ）、（１２Ｇ
）、（１２８）から出た出力は対屯する増幅器（３０Ｒ
）、（３０Ｇ）、（３０Ｂ）ｔ−経て最大値検出器（至
）に入る。最大値検出器Ｃ１１ｒｊ比較器の集まりから
なる周知の構成であり、各増幅器（！ｔＯＲ）、（３０
（））、（３０Ｂ）の出力の中から最も出力レベルの大
きいものを見つけ、そｎが赤に対応する場合、線（３２
Ｒ）Ｋ、緑に対応する場合、ＩＩ（３２ｅ）ＶＣ１又青
に対Ｚす、６４合、＃（３２Ｂ）に夫々出力を出す。The specific configuration of the processing circuit (7) is shown in FIG.
), (128) are connected to the corresponding amplifier (30R
), (30G), (30B) enters the maximum value detector (to) via t-. It is a well-known configuration consisting of a collection of maximum value detector C11rj comparators, each amplifier (!tOR), (30
Find the one with the highest output level among the outputs of ()) and (30B), and if that n corresponds to red, line (32
R) When corresponding to K and green, output is output to II (32e) VC1 or Z for blue, 64 and # (32B), respectively.
上記実施例でに、各素子（１２Ｒ）、（１２Ｇ）、（１
２Ｂ）の光活性層ｔｌｓａ Ｐ Ｉ Ｍ ＦＩ４ｒｔ含
む元起電力渥であったが、例えば約５μ醜厚のｌ１ｉｌ
のアモルファスシリコンのみで形成して元導電型の光活
性層に変更することもできる。この場合、第す図に示す
即く、光活性層Ｃｌ５１の表面に１対の電極（１６ａ）
、（１６ｂ）ｔ−被着する構成でも良い。In the above embodiment, each element (12R), (12G), (1
2B) The photoactive layer of TLSA PI M FI4rt was originally an electromotive force layer, but for example, the photoactive layer was about 5μ thick.
It is also possible to change the photoactive layer to the original conductivity type by forming it only from amorphous silicon. In this case, a pair of electrodes (16a) are provided on the surface of the photoactive layer Cl51 as shown in FIG.
, (16b) T-adhering structure may also be used.
又、上記実施例でに、光活性層（１５１と第１、第２電
極ｓａｗ、 （ｌｅは何几も各素子毎に分離さｎている
が、元活性ＮＱ５１ｔ−分離することなく各素子（１２
Ｒ）、（１２Ｇ）、（１２８）に連続して設けることも
でき、及びあるいに、第１電極Ｍａ４又ｒｊ第２電極膜
１１０の何れか一万ケやはり分離することなく各素子に
連αして設けることもできる。尚、アモルファス半導体
からｌる元活ａ＊ｔｌｓｉその厚さが極めて小さいので
、上記の如く各素子に連続して設けらルても、各素子間
のクロスドータげほとんどない。In addition, in the above embodiment, although the photoactive layer (151 and the first and second electrodes (151) and (le) are separated for each element in many layers, the original active NQ51t-- each element ( 12
R), (12G), and (128), or alternatively, 10,000 pieces of either the first electrode Ma4 or rj second electrode film 110 may be connected to each element without being separated. It is also possible to provide α. Incidentally, since the thickness of the original a*tlsi formed from the amorphous semiconductor is extremely small, there is almost no cross-doping between each element even if it is successively provided in each element as described above.
バイトなど他のもの金も使用し得、［１Ｃｉｊ１部に多
結晶や微結晶ｔ−混スすることも可能であるＯ又、必要
に応じて感光素子の数音適宜増減し得る。It is also possible to use other metals such as bits of gold, and it is also possible to mix polycrystals or microcrystals into one part of the metal.Also, the number of photosensitive elements can be increased or decreased as necessary.
以上の蚊明エリ明らかな如く、本発明ｖＣエルば、赤外
カットフィルタを不壺にし、その他）色７ （ルタの取
着の簡単な色セン豐−を実現でき、又処理回路をセンサ
ー自身の基板に設けたから回ｗｌをイ乙
含めたセンサーのエニンＦｈが図れる・As is clear from the above, the present invention makes it possible to make the infrared cut filter non-containing, to realize a color sensor that is easy to attach to the color filter, and to connect the processing circuit to the sensor itself. Since it is installed on the board of
第１図は従来例金示す断面図、第２図に感覚特性図、第
３１八は本発明実施例の平面図、第３図Ｂは同Ｂ−８拡
大断面図、第４１は回路図、第５図は他の実施例の要部
断面図である。
ｒｔｔ＋・・・基板、（１２Ｒ）、（１２Ｇ）、（１２
Ｂ）・・・第１、第２、第３感元素子、（１３Ｒ）、（
１３Ｇ）、（１３Ｂ）・・・赤、緑、！フィルタ膜、ｕ
５１・・・光活性層、■・・・処理回路Ｏ＋ｃ’
ｐｉり Ｉｚｇ
第４図
祁図Fig. 1 is a sectional view showing a conventional example, Fig. 2 is a sensory characteristic diagram, Fig. 318 is a plan view of an embodiment of the present invention, Fig. 3B is an enlarged sectional view of B-8, Fig. 41 is a circuit diagram, FIG. 5 is a sectional view of a main part of another embodiment. rtt+...Substrate, (12R), (12G), (12
B)...First, second, and third sensing elements, (13R), (
13G), (13B)...red, green,! filter membrane, u
51... Photoactive layer, ■... Processing circuit O+c'
Piri Izg
Figure 4 Qi-tu
Claims (1)
子管含み、該素子の各々に、上記基板の１工面に設けら
ｎた各素子に個有の色フィルタ膜と、上記基板の他の工
面に設けらｎたアモルファス半導体を生体とする光活性
層及び上記色フィルタ膜の各々と個別に対向する電極膜
の積層体とを備え、更に、上記各素子の電極膜と電気的
に連なり、各素子の出力を処理する処理回路上上記基板
の１＋。 面に設けたことを特徴とする色センサー。[Scope of Claims] (]) A plurality of thin film sensitive element tubes provided on a transparent base, each of the elements having a unique characteristic for each element provided on one surface of the substrate. A color filter film, a photoactive layer made of an amorphous semiconductor provided on the other surface of the substrate, and a laminate of electrode films individually facing each of the color filter films, further comprising: 1+ of the above substrate on a processing circuit that is electrically connected to the electrode film of the element and processes the output of each element. A color sensor characterized by being installed on the surface.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57009200A JPS58125868A (en) | 1982-01-22 | 1982-01-22 | Color sensor |
| GB08300968A GB2115980B (en) | 1982-01-22 | 1983-01-14 | Color sensor |
| FR8300882A FR2520557B1 (en) | 1982-01-22 | 1983-01-20 | CHROMATIC SENSOR |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57009200A JPS58125868A (en) | 1982-01-22 | 1982-01-22 | Color sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58125868A true JPS58125868A (en) | 1983-07-27 |
Family
ID=11713844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57009200A Pending JPS58125868A (en) | 1982-01-22 | 1982-01-22 | Color sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58125868A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61226975A (en) * | 1985-03-30 | 1986-10-08 | Moririka:Kk | Pull color sensor |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4846280A (en) * | 1971-10-05 | 1973-07-02 | ||
| JPS5477083A (en) * | 1977-12-02 | 1979-06-20 | Hitachi Ltd | Photoelectric transducer |
| JPS55141767A (en) * | 1979-04-24 | 1980-11-05 | Fuji Xerox Co Ltd | One-dimensional image sensor |
| JPS562784A (en) * | 1979-06-22 | 1981-01-13 | Nippon Telegr & Teleph Corp <Ntt> | Image pickup device |
| JPS56103573A (en) * | 1980-01-22 | 1981-08-18 | Canon Inc | Color reading device |
| JPS56135980A (en) * | 1980-03-28 | 1981-10-23 | Canon Inc | Photoelectric conversion element |
| JPS56138362A (en) * | 1980-03-31 | 1981-10-28 | Canon Inc | Photoelectric converter |
-
1982
- 1982-01-22 JP JP57009200A patent/JPS58125868A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4846280A (en) * | 1971-10-05 | 1973-07-02 | ||
| JPS5477083A (en) * | 1977-12-02 | 1979-06-20 | Hitachi Ltd | Photoelectric transducer |
| JPS55141767A (en) * | 1979-04-24 | 1980-11-05 | Fuji Xerox Co Ltd | One-dimensional image sensor |
| JPS562784A (en) * | 1979-06-22 | 1981-01-13 | Nippon Telegr & Teleph Corp <Ntt> | Image pickup device |
| JPS56103573A (en) * | 1980-01-22 | 1981-08-18 | Canon Inc | Color reading device |
| JPS56135980A (en) * | 1980-03-28 | 1981-10-23 | Canon Inc | Photoelectric conversion element |
| JPS56138362A (en) * | 1980-03-31 | 1981-10-28 | Canon Inc | Photoelectric converter |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61226975A (en) * | 1985-03-30 | 1986-10-08 | Moririka:Kk | Pull color sensor |
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