JPS58125866A - Color sensor - Google Patents
Color sensorInfo
- Publication number
- JPS58125866A JPS58125866A JP57009198A JP919882A JPS58125866A JP S58125866 A JPS58125866 A JP S58125866A JP 57009198 A JP57009198 A JP 57009198A JP 919882 A JP919882 A JP 919882A JP S58125866 A JPS58125866 A JP S58125866A
- Authority
- JP
- Japan
- Prior art keywords
- face
- color
- film
- substrate
- red
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000010408 film Substances 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000010409 thin film Substances 0.000 claims abstract description 4
- 210000000744 eyelid Anatomy 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 3
- 229910001887 tin oxide Inorganic materials 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 2
- 229920003023 plastic Polymers 0.000 abstract description 2
- 239000004033 plastic Substances 0.000 abstract description 2
- 239000011521 glass Substances 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 5
- 241000593989 Scardinius erythrophthalmus Species 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 206010034972 Photosensitivity reaction Diseases 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000036211 photosensitivity Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 241000831576 Chlorophthalmus acutifrons Species 0.000 description 1
- 241000254173 Coleoptera Species 0.000 description 1
- 235000008375 Decussocarpus nagi Nutrition 0.000 description 1
- 244000309456 Decussocarpus nagi Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- PZTQVMXMKVTIRC-UHFFFAOYSA-L chembl2028348 Chemical compound [Ca+2].[O-]S(=O)(=O)C1=CC(C)=CC=C1N=NC1=C(O)C(C([O-])=O)=CC2=CC=CC=C12 PZTQVMXMKVTIRC-UHFFFAOYSA-L 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 206010025135 lupus erythematosus Diseases 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000002186 photoactivation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 102220005338 rs111033604 Human genes 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Spectrometry And Color Measurement (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
本発明ａア七／Ｉ／ ７７ス半導体を光活性層に用いた
色センサーに関するつ
光活性−に本結晶シリコン管用いた色センサーは既に知
られている。その原理的な構成は、第１図に示す如く、
単結晶シリコン基板（１１３面に複数の７ ｇ ）ダイ
オード領域＋２１． （３１、（４）を設けると共に、
これら各惜域上に異なる色アイＭり、例えば赤色アイ〃
り（５１、緑色アイ〃り（６１及び青ｔ！３フィル！（
７）を配し、ｖ！にその上に赤外力ットアイＶり１８１
を配したもので、断るセンサーにおいて、各フィルタを
介して可視光が基板（１１に入射すると、入射用視光の
含む色に応じてそれが赤ならダイオード領纜ｔ２）に、
緑ならダイオードｉｊ＊ ｆ３１に、文責ならダイオ
ード＠植（４）Ｋ天々信ｔが出力される。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a color sensor using a semiconductor as a photoactive layer.A color sensor using a crystalline silicon tube as a photoactive layer is already known. Its basic configuration is as shown in Figure 1.
Single crystal silicon substrate (multiple 7 g on 113 planes) diode region +21. (31, (4) is provided, and
On each of these regions there is a different colored eye, for example a red eye.
ri (51, green eye 〃ri (61 and blue t! 3 fill!)
7) and v! Then apply infrared power on it.181
In the sensor, when visible light enters the substrate (11) through each filter, depending on the color included in the incident visual light, if it is red, it enters the diode area t2,
If it is green, the diode ij* f31 is output, and if it is the censor, the diode @suku (4) K Tentenshin t is output.
単結晶Ｖリコン自体の感光度特性は第２図の曲線ＡＫ示
す卯く、赤外領域にピークを呈する。一方、赤色フィル
タ（５１は赤色帯域で透ｉ度のピークを示すものの、そ
の帯埴特性の拡がりは通常減衰しながらも赤外＠域にま
ですそ野を引いている。The photosensitivity characteristic of single crystal V recon itself is shown by curve AK in FIG. 2, and exhibits a peak in the infrared region. On the other hand, although the red filter (51) exhibits a transmittance peak in the red band, the spread of its band characteristic generally attenuates, but extends to the infrared range.
従って光活ｔ！ＦＩＩＩＫ拳結晶シリコンを用いた場合
、赤色アイＭりを通すだけでは、フォトダイオード領域
（２１は、ｍ衰しながらも共に入射する赤外光に本結晶
シリコン自体の感光度特性に応じて強く感応してし筐い
、正確な色情報を検出できない。上記従来の色センサー
における赤外カブトアイＶり（８１は、この様な入射赤
外光を除去するために設けられてお如、不可欠の存在で
ある。Therefore, light activity t! When FIIIK crystalline silicon is used, if only the red eye is passed through, the photodiode region (21) will be strongly sensitive to incident infrared light, depending on the photosensitivity characteristics of the crystalline silicon itself, although it will attenuate. However, accurate color information cannot be detected.The infrared beetle eye (81) in the conventional color sensor is provided to remove such incident infrared light. It is.
しかしながら、断る赤外カットアイにりの存在はセンサ
ーの構成を複ＩＩＫするだけでなく、製造に際して、そ
のフィルタをシリコン基板上に１畳被着する工程で脆弱
なシリコン基板を破損しやすいといった欠点をもたらす
。However, the presence of the infrared cut eye glue not only complicates the configuration of the sensor, but also has the drawback of easily damaging the fragile silicon substrate during the process of attaching the filter to the silicon substrate during manufacturing. bring about.
本発明は上記の点に纜みてなされたもので、以下本発明
をｗｍ例において説明する。The present invention has been made in view of the above points, and the present invention will be explained below using a wm example.
ｖｇｓ図に木９１ＦＪ１例としての赤、緑、青の各色に
感光する色センサー〇〇を示す。この色セン貨−帥は厚
さ０．３ｍｌ！度のガフスｆプラスチックなどからなる
透光性基板０に設けられ九１１ｇ１．第２．第５の薄膜
状感光素子（１２Ｒ）、（１２Ｇ）、（１２Ｂ）を含む
。これらの各感光素子は基板ａ１１の１主面に設けられ
た各素子に個有の色アイ〃り膜。The vgs diagram shows the color sensor 〇〇, which is sensitive to each color of red, green, and blue, as an example of Wood 91FJ1. This colored coin is 0.3ml thick! The gaffs f are provided on a transparent substrate made of plastic or the like. Second. It includes fifth thin-film photosensitive elements (12R), (12G), and (12B). Each of these photosensitive elements has a unique color iris film provided on one principal surface of the substrate a11.
即ち、第１感光素子（１２Ｒ）にけ赤色フィルタ膜（１
３Ｒ）、ＩＩＰＪ２感光素子（１２Ｇ）には緑色フィル
タｌ１ｌＩ（１５Ｇ ）、第５Ｗ＆光素子（１２Ｂ）に
は青色７４にり＃（１，５Ｂ）を有している。各フィル
タ膜としてはイーストマン・コダック社製のＷＲＡＴＴ
ＩＩＤＮ ＧＩＩＧＬＡＴＩ！：Ｎ １？’工Ｉ、
Ｔ ＥＲが好適であシ、赤色７（Ａ／夕膜（１，５Ｒ）
としてはその１１ｈ２５、緑色フィルタ！ＩＩ（１５Ｇ
）としては凪５８、 又青色７４ ｐｖｌ膜（１５Ｂ
）としテｉｌｒ＆４７Ｂの各品番のものが用いられ、こ
れらは例見はカナダパルサンなどの透明樹脂接着材によ
り基板ＱＩＩＪ：に固定される。That is, the red filter film (1
3R), the IIPJ2 photosensitive element (12G) has a green filter l1lI (15G), and the 5th W&photo element (12B) has a blue color 74 filter # (1,5B). Each filter membrane is WRATT manufactured by Eastman Kodak Company.
IIDN GIIGLATI! :N1? 'Engineering I,
T ER is preferred, red 7 (A/Evening (1,5R)
As for 11h25, green filter! II (15G
) as Nagi 58, and Blue 74 pvl membrane (15B
) and 47B are used, and these are fixed to the substrate QIIJ: using a transparent resin adhesive such as Canada Pulsan.
１１ｇ１〜第５感光素子（１２Ｒ）、（１２Ｇ）、（１
２Ｂ）の夫々ハ、ｕＭ板Ｑｌｌ Ｏ他Ｏ主面［１けられ
た第１電ｇｉＳα◆、光活性層（至）及び＠２電砺Ｓａ
ａの積層体を備えておシ、これら横着体は夫々の感光素
子のフィルタ膜と個別に対向している。11g1 to fifth photosensitive element (12R), (12G), (1
2B), respectively C, uM plate Qll O and other O main surfaces [1 deviated first electric wire Sα◆, photoactive layer (to) and @2 electric wire Sa
A laminated body is provided, and these horizontally attached bodies individually face the filter films of the respective photosensitive elements.
上記ｖｇ１電ｆｆｌ寝α４け酸化錫やインジウム・錫酸
化物などの透明導電物からなり、第２電極膜ＣＪ！Ｊに
アＡ／にラムなどからなる。The second electrode film CJ! is made of a transparent conductive material such as tin oxide or indium tin oxide. It consists of J, A/, Ram, etc.
上記光活性−０５框厚さ約１μｍのア七Ｖプアスシリコ
ン半導体で構成され、第４図にその詳細が示されている
うこれを製造方法と共により具体的に説明すると、各素
子（１２Ｒ）、（１２Ｇ ）。The above-mentioned photoactive -05 frame is composed of an A7V poor silicon semiconductor with a thickness of about 1 μm, and the details are shown in FIG. (12G).
（１２Ｂ）の第１電極α４のみを形改済みの基板［１１
１を反応室に納め、シフンガスや不純物ガスからなる雰
囲叡中でのグロー放電によシ第１電極ａ４上にアモルフ
ァスシリコンからなるＰ３１１１（１５ａ ）工ｍ＋層
（１５１））及びＮ型層（１５０）を順次堆積して光活
性層（至）が形成される。その堆ＩＩ儂域はマスクの便
用によ鯉所定部分に＠定し得るものである・尚グロ″″
皺電によるア七ＩＷ ７ ＦスＶリコン１４ ｔ−Ｙ０
１１ＷＬ１ｉＡ体は特公昭５３−４７７１８号公報に開
示されて−る橡Ｋｊｌ知である。(12B) The substrate [11
1 is placed in a reaction chamber, and a P3111 layer (15a) made of amorphous silicon (m+ layer (151)) and an N-type layer ( 150) are sequentially deposited to form a photoactive layer. The second part of the mask can be placed on a designated part of the mask for convenience.
A7 IW 7 Fsu V Recon 14 t-Y0 by Wanden
The 11WL1iA body is known as disclosed in Japanese Patent Publication No. 53-47718.
上記ｆｐ３セ＞ｔ−ｆｌＯＶｃおいて、各きアイｐｖｐ
（１５Ｒ）、（１！ＳＧ）、（１３Ｂ）の存在に工りこ
れらアイｖｐ＊よ〉入射する光は、それ−Ｂｓ赤色を含
む場合、赤色アイＶり（１５Ｂ）及び基板ＧＩＩを介し
て第１感光素子（１２Ｒ）Ｋ人動、ｍｓ子内の主に１ｍ
１９（１５１））で自由キ◆噂γを発生せしめる。この
自由年令リアは第１．第２電極鵠。In the above fp3>t-flOVc, each eye pvp
Due to the existence of (15R), (1!SG), and (13B), if the light incident on these eyes contains red, it passes through the red eye (15B) and the substrate GII. 1st photosensitive element (12R) K human movement, mainly 1m in the ms element
19 (151)) generates free key◆rumor γ. This free year rear is the first. Second electrode mouse.
（至）に集められ、 １ｉｉｌｌｉｆｌｌＫ電圧が発生
する。同様圧して、入射光が緑色を含む場合、又青色を
含む場合、夫々第２感党素子（１２Ｇ ）、第１感光素
子（１２Ｂ）において第１、第２電極（ロ）、（至）間
に電圧が発生する。よってこれらの電圧を検出すること
によ砂入射光の色検出をなすことができる。(to), and a voltage of 1iillifllK is generated. Similarly, when the incident light contains green color or blue color, the distance between the first and second electrodes (b) and (to) in the second photosensitive element (12G) and the first photosensitive element (12B), respectively. A voltage is generated. Therefore, by detecting these voltages, the color of the light incident on the sand can be detected.
１セルファス半導体の感光度特性は＠２図の曲ｊｌＢに
示す如く、はとんど可視光領域に納する帯域を有してい
る。このため１本賽施例色センナーーでは、たとえ赤色
アイＭり（１５Ｒ）を通して赤外光が入ったとしても、
それハホとんど検出されず、従って従来必要としていた
赤外カットアイＶターを用いろことなく正確な色情報を
検出することができる。又、本実施例色センサー（２）
Ｋありては、各色アイνり（１５Ｒ）、（１５Ｇ）、（
１５Ｂ）は光活性層（２）とけ反対−の基板表面に取着
されるので、その取ＷＷ＆に光活性＠（至）を傷めるこ
ともない。1. The photosensitivity characteristics of the Cellphas semiconductor have a band that mostly falls within the visible light region, as shown by curve jlB in Figure @2. For this reason, with a single color sensor, even if infrared light enters through the red eye M (15R),
Most of the colors are not detected, so accurate color information can be detected without using an infrared cut-eye, which was conventionally required. In addition, this example color sensor (2)
For K, each color eye is (15R), (15G), (
15B) is attached to the surface of the substrate opposite to the photoactive layer (2), so its attachment does not damage the photoactivity.
本発明実施例にこの様な優れた色センサ″−（１３にお
いて、その色検出精度をより高めんとするものた点に特
徴を有する。第４１１光素子（１２Ｗ）は他の素子と同
様の構成にして同様の方法で基板０に設けられるが、＆
板Ｉの他の主面に対向して色アイｙりを有していない点
で他の素子と異なっている。Embodiments of the present invention are characterized in that they are designed to further enhance the color detection accuracy of such an excellent color sensor (13).The 411th optical element (12W) is similar to the other elements. The configuration is provided on substrate 0 in a similar manner, but &
This element differs from other elements in that it does not have a colored eyelid facing the other main surface of the plate I.
＠４の感光素子（１２Ｗ）は他の素子め出力の−正のた
めに使用され、その使用例を！！５図に示す。同図にて
第１．第２、第５の各感光素子（１２Ｒ）、（１２Ｇ）
、（１２Ｂ）から出た出力は対応する増幅器＜５０Ｒ）
、（５０Ｇ）、（５０Ｂ）を経て最大値検出器６１に入
る。最大値検出器６１１社比較器の集１りからなる周知
のｗ４成であり、各増幅器＜５ＯＲ）、Ｃ３０Ｇ）、（
５０Ｂ）の出力の中から最も出力レベルの大きいものを
見つけ、それが赤に対応する場合、綴（５２Ｒ）Ｋ。The photosensitive element (12W) @4 is used for the -positive output of other elements. Here is an example of its use! ! It is shown in Figure 5. In the same figure, 1. Second and fifth photosensitive elements (12R), (12G)
, (12B) is output from the corresponding amplifier <50R)
, (50G), and (50B) and enters the maximum value detector 61. It is a well-known w4 configuration consisting of a collection of maximum value detectors and 611 comparators, each amplifier <5OR), C30G), (
Find the one with the highest output level among the outputs of 50B), and if it corresponds to red, Tsuzuki (52R)K.
緑に対応する場合、ＩＩ（３２Ｇ）に、文責に対応する
場合、Ｊｉｌ！（３２Ｂ）に夫々出力を出す。このま＼
では、＠えは赤と緑の中間色であって、赤の方がやや強
い光が入射した場合、中間色であるＫもかかわらず最大
値検出器３υは赤の判定出力を出してし１つ、この様な
出力状轢を避ける丸めに第４Ｗ＆光素子（１２Ｗ）の出
力が柑いられる。即ち。When it corresponds to green, it corresponds to II (32G), and when it corresponds to Wénzaku, it corresponds to Jil! (32B) respectively. Konoma＼
So, @e is an intermediate color between red and green, and when a light that is slightly stronger than red is incident, the maximum value detector 3υ outputs a judgment output of red even though K is an intermediate color. The output of the fourth W & optical element (12W) is rounded to avoid such an output condition. That is.
その出力は増幅器（！１０Ｗ）を経た後、比較器（３５
Ｒ）、＜５５Ｇ）、＜５５Ｂ）にて他の増幅器（！ｌ０
Ｒ）、（，５０Ｇ）、（４０Ｂ）の出力と比較さり、ｂ
。ｋｉｌｌ（５５Ｒ）、（５，ＳＧ ）、（３５Ｂ）の
各々は、実質的に、夫々第１、第２、［Ｗ＆光を子（１
２Ｒ）、 （１２Ｇ ）、（１２Ｂ）の出力レベルが第
４Ｗ＆光素子（１２Ｗ）の出力レベｙの所定割抄合いよ
り大きいときに出力を出し、その出力はオアゲート−を
経て最大１！検出器（２）の動作を葡効ならしめる。The output passes through an amplifier (!10W) and then a comparator (35
R), <55G), <55B) with other amplifiers (!l0
R), (,50G), (40B) compared with the output, b
. kill(55R), (5,SG), and (35B) are substantially the first, second, and [W&light child(1), respectively.
When the output level of 2R), (12G), and (12B) is greater than a predetermined proportion of the output level y of the 4th W & optical element (12W), the output is outputted, and the output reaches a maximum of 1! after passing through an OR gate. The operation of the detector (2) is made effective.
第４Ｗ＆光素子（１°２Ｗ）は色アイνりを有していな
いので、その出力レベＡ／ニ他の何れの感光素子のそれ
よ抄も大きい。そして、＠１．＠２．第５感光素子（１
２Ｂ）、（１２Ｇ）、（１２Ｂ）の出力レベ／Ｌ’Ｈ第
４感光雲＋（１２Ｗ）の出力レベＶより低いが、入射光
が中間色である場合、更に低くなる。よって中間色でな
い場合の第１．＠２、第５Ｗ＆光素子（１２Ｒ）−（１
２Ｇ）、（３２Ｂ）の出力レベνと第４感光素子（１２
Ｗ）の出力レベルの比を基準として、比較器＜５５Ｅ）
。Since the fourth W & photo element (1° 2 W) has no color deviation, its output level A/D is greater than that of any other photosensitive element. And @1. @2. Fifth photosensitive element (1
2B), (12G), and (12B)/L'H fourth photosensitive cloud + output level V of (12W), but it becomes even lower when the incident light is an intermediate color. Therefore, the first case when the color is not intermediate. @2, 5th W & optical element (12R) - (1
2G) and (32B) and the fourth photosensitive element (12
Based on the ratio of the output levels of W), the comparator <55E)
.
（３５Ｇ）、（３３Ｂ）の各々は＠１．第２、第５１１
１１１子（１２Ｒ）、 （１２Ｇ ）、（１２Ｂ）の出
力レベＭが斯る基準より低φ場合、出力を出さない様設
計されているのである。この結果、上記の如く１例えば
赤と緑の中間色の光が色センサーαＯに入射した場合、
最大値検出器−は働かず、何ら出力を生じない。(35G) and (33B) are each @1. 2nd, 511th
The design is such that when the output level M of the 111 children (12R), (12G), and (12B) is lower than this standard, no output is output. As a result, as described above, 1, for example, when light of an intermediate color between red and green is incident on the color sensor αO,
The maximum value detector does not work and produces no output.
上記実施例では、各素子（１２Ｒ）、（１２Ｇ）、（１
２Ｂ）の光活性１ＩＩＣＪＢはＰＩＮｉｌ会を含む光起
電力型であったが１例えば約５μｍ厚の１型の１七ルプ
１スシリコンのみで形成して光導電型の光活性層に変艷
することもできる。この場合。In the above embodiment, each element (12R), (12G), (1
2B) Photoactivation 1ICJB was a photovoltaic type including PINil layer 1, but it is transformed into a photoconductive type photoactive layer by forming only, for example, 17 lupus silicon of type 1 with a thickness of about 5 μm. You can also do that. in this case.
：第６図に示す如く、光活性層（至）の表面に１対の電
極（１６ａ）、（１６１））を被着する構成でも良い。: As shown in FIG. 6, a structure may be adopted in which a pair of electrodes (16a), (161)) are adhered to the surface of the photoactive layer.
又、上ｆａＷＩｉＭ？Ｈ１光活性−０５ト第１、第２電
ｆｆ１ｌｌａ尋、αＧは何れも各素子毎に分離されてい
るが、光活性ｍｕを分離することなく各素子（１２Ｒ）
、（１２Ｇ）、（１２Ｂ）ＫＭＩＲＩ、て設けることも
でき、及びあるいは、第１電１ｉ１１Ｑ４１又は第２電
極膜αｅの何れか一方をやは抄分離することなく各素子
に連続して設けることもできる。崗、１七〜ファス半導
体からなる光活性ｍａＢσその厚でが極めて小さいので
、と紀の々口く各素子にｉＬ！続して設けられても、各
素子間のクロストーク框はとんどない。Also, upperfaWIiM? H1 photoactive-05 first and second electrodes, αG are separated for each element, but each element (12R) is separated without separating the photoactive mu.
, (12G), (12B) KMIRI, and alternatively, either the first electrode film 1i11Q41 or the second electrode film αe can be provided continuously in each element without being separated. can. Since the thickness of the photoactive maBσ made of a 17-fas semiconductor is extremely small, Kikuno says that each element has an iL! Even if they are installed in succession, there is little crosstalk between each element.
又、上記′４Ｎ施例の光活性層αｅに用いた１七ルフア
スＶリコンに代工てアモＭファスシリコンカーバイドな
ど他のものをも使用し得、艷には１部に多結晶や微結晶
を混入することも司能である。In addition, other materials such as amo Mfas silicon carbide may be used in place of the 17ruphas V recon used for the photoactive layer αe of the above '4N embodiment, and polycrystals or microcrystals may be used in some parts of the shell. It is also wise to mix in.
又、必曽に応じて感光素子の数を適宜増減し得νりの取
着の開部な色センサーを実現で裏、又その色検出精度を
高めることができる。In addition, the number of photosensitive elements can be increased or decreased as required, thereby realizing a color sensor that can be easily mounted and improving its color detection accuracy.
第１図は従猥例を示す＃面図、第２図は感光特性図、第
５図Ａげ本発明実施例の平面図、第５図Ｂは同Ｂ−Ｂ断
面図、第 ５図Ｃは四〇 （Ｅ断面図、第４図は参部
拡大ｌ１ｌｒＩｌｉｉ図、第５図は四略図。
第６図は他の実施例の要部断面図である。
（Ｉｌｌ・・・・・・基板、（１２Ａ）、（１２Ｂ）、
（１２Ｃ）・・・・・・第１．第２．８ｇＡｌｌ光素子
、Ｑ５・・・・・・光活性１゜
第２図
波 長 （九ｍ→
７どＱ Ｉど９Fig. 1 is a # side view showing an example, Fig. 2 is a photosensitive characteristic diagram, Fig. 5 is a plan view of an embodiment of the present invention shown in Fig. 5A, Fig. 5B is a sectional view taken along the line B-B, Fig. 5C is a 40 (E sectional view, FIG. 4 is an enlarged l1lrllii view of the part, and FIG. 5 is a schematic diagram of the fourth part. FIG. 6 is a sectional view of the main part of another embodiment. (Ill...Substrate , (12A), (12B),
(12C) 1st. 2.8g All optical element, Q5...Photoactivity 1° Fig. 2 Wavelength (9m→ 7doQ Ido9
Claims (1)
含み、該素子の各々は、上記基板の１主面ＫＲけられた
各素子に個育の１！３フイＩレタ膜と、上記基板の他の
主面に設けられ定アそルア１ス半導にと記感光票子と同
様の構成にて上記基板に設けられ色アイｙりＷｓｆ有さ
ない少なくとも１つの感光素子ｆ＠えることを特徴とす
る色センサー。(Includes a plurality of thin-film photosensitive elements provided on a light-transmitting substrate 11, each of which has a 1!3 fill I letter film on each element formed on one main surface KR of the substrate, At least one photosensitive element (f) provided on the other main surface of the substrate and having a configuration similar to that of the photosensitive element and having no color eyelid Wsf and marked with a semiconductor having a constant aperture. A color sensor characterized by:
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57009198A JPS58125866A (en) | 1982-01-22 | 1982-01-22 | Color sensor |
| GB08300968A GB2115980B (en) | 1982-01-22 | 1983-01-14 | Color sensor |
| FR8300882A FR2520557B1 (en) | 1982-01-22 | 1983-01-20 | CHROMATIC SENSOR |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57009198A JPS58125866A (en) | 1982-01-22 | 1982-01-22 | Color sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58125866A true JPS58125866A (en) | 1983-07-27 |
Family
ID=11713800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57009198A Pending JPS58125866A (en) | 1982-01-22 | 1982-01-22 | Color sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58125866A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4846280A (en) * | 1971-10-05 | 1973-07-02 | ||
| JPS5068787A (en) * | 1973-10-22 | 1975-06-09 | ||
| JPS562784A (en) * | 1979-06-22 | 1981-01-13 | Nippon Telegr & Teleph Corp <Ntt> | Image pickup device |
| JPS5617085A (en) * | 1979-07-20 | 1981-02-18 | Sony Corp | Solid imaging element |
| JPS56103573A (en) * | 1980-01-22 | 1981-08-18 | Canon Inc | Color reading device |
| JPS56150879A (en) * | 1980-04-23 | 1981-11-21 | Canon Inc | Photoelectric converter |
-
1982
- 1982-01-22 JP JP57009198A patent/JPS58125866A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4846280A (en) * | 1971-10-05 | 1973-07-02 | ||
| JPS5068787A (en) * | 1973-10-22 | 1975-06-09 | ||
| JPS562784A (en) * | 1979-06-22 | 1981-01-13 | Nippon Telegr & Teleph Corp <Ntt> | Image pickup device |
| JPS5617085A (en) * | 1979-07-20 | 1981-02-18 | Sony Corp | Solid imaging element |
| JPS56103573A (en) * | 1980-01-22 | 1981-08-18 | Canon Inc | Color reading device |
| JPS56150879A (en) * | 1980-04-23 | 1981-11-21 | Canon Inc | Photoelectric converter |
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