JPS58116725A - Cvd apparatus - Google Patents

Cvd apparatus

Info

Publication number
JPS58116725A
JPS58116725A JP21252681A JP21252681A JPS58116725A JP S58116725 A JPS58116725 A JP S58116725A JP 21252681 A JP21252681 A JP 21252681A JP 21252681 A JP21252681 A JP 21252681A JP S58116725 A JPS58116725 A JP S58116725A
Authority
JP
Japan
Prior art keywords
wafer
gas
susceptor
main surface
nozzle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21252681A
Other languages
Japanese (ja)
Inventor
Sumio Imaoka
今岡　純雄
Kenji Takahashi
謙司 高橋
Kazuya Kitajima
北島　一也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Corp
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Corp, Pioneer Electronic Corp filed Critical Pioneer Corp
Priority to JP21252681A priority Critical patent/JPS58116725A/en
Publication of JPS58116725A publication Critical patent/JPS58116725A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Abstract

PURPOSE:To realize growth of uniform film by arranging a holding means so that the main suface of wafer is faced downward and by locating a gas injecting means at the lower side of the holding means. CONSTITUTION:A susceptor 12 is closely fixed to a heater block 10 and wafers 14 are held by said susceptor with the main surfaces 18 faced downward by means of hooks 16. At the lower side of susceptor 12, a rail 50 is laid in the arranging direction of wafers 14 and a base 54 is put on the rail 50. At the upper part of base 54, a nozzle 56 is provided with the injection port 58 faced upward and a gas for growth of film is supplied through a pipe 60. In the case of this invention, gas is injected right upward to wafers and therefore a crystal powder formed in the vicinity of injection port of nozzle 56 drops downward and is hardly adhered to the main surface 18 of wafer 14.

Description

【発明の詳細な説明】 本発明は、Ｃｖ［）　（Ｃｈｅｓｉｃａｌ　　Ｖ　ａｐ
ｏｒＱ　ｅｐｏｓｉｔｌｏｎ　）装置、とに、半導体ウ
ェハを加熱のために担持する担持手段と、担持手段に対
向し、半導体ウェハの主面に向けて気体を噴出させる気
体噴出手段とを含み、半導体ウェハの主面に気相成長層
を形成するＣＶＤ装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention provides Cv[) (Chemical V ap
orQ epositon) apparatus, comprising a supporting means for supporting a semiconductor wafer for heating, and a gas ejecting means facing the supporting means and ejecting gas toward the main surface of the semiconductor wafer. The present invention relates to a CVD apparatus that forms a vapor phase growth layer on a surface.

従来、ＣＶＤ装置では気体噴出手段としてのノズルが担
持手段としてのサセプタの上方に設けられている。サセ
プタに固定されたたとえばシリコンなどの半導体ウェハ
が加熱され、その鏡面には、ＣＶＤ成長させたい物質の
原料ガスおよびキャリアガスをノズルから下方に噴出さ
せ、ウェハの鏡面に気相成長層（Ｓｉ　０２　、ＰＳＧ
＞が形成される。ノズルから噴出したガスは、多くはウ
ェハの鏡面において結晶化して付着するが、他の一部は
ノズル噴出口付近に付着してそこに結晶性の粉末が形成
される。このような粉末はノズル周辺に付着するのみな
らず、ガスの噴出にともなって下方にあるウェハやサセ
プタの上に落下することがしばしばある。つＩハ上に落
下した粉末はそのまま気相成長層成長とともにその中に
閉じ込められる。Conventionally, in a CVD apparatus, a nozzle serving as a gas jetting means is provided above a susceptor serving as a supporting means. A semiconductor wafer, such as silicon, fixed to a susceptor is heated, and a vapor phase growth layer (Si 02 , P.S.G.
> is formed. Most of the gas ejected from the nozzle crystallizes and adheres to the mirror surface of the wafer, but some of the gas adheres to the vicinity of the nozzle outlet, forming crystalline powder there. Such powder not only adheres to the vicinity of the nozzle, but also often falls onto the wafer or susceptor below as the gas is ejected. The powder that falls onto the tube is trapped therein as the vapor phase growth layer grows.

サセプタ上に落下した粉末は徐々に堆積して、ウェハを
サセプタに設定するときに飛び散ってなかにはウェハ上
にその破片が散乱し、後のＣＶＤ処理において気相成長
層の中に取り込まれたりする。The powder that falls onto the susceptor gradually accumulates and is scattered when the wafer is placed on the susceptor, and some of the powder is scattered on the wafer and incorporated into the vapor growth layer during the subsequent CVD process.

気相成長層の中に取り込まれた粉末は、その周囲に層厚
の薄い部分を生ぜしめたり、ウェハと成長層との間の密
着性を悪くしたりする。また後にウェハ上にデバイスを
製造するときに、マスク合せにおいて成長層中の粉末が
マスクとの接触により脱落して成長層に穴があいたり、
粉末の周辺の成長層の急峻な盛上りのためにレジストに
対する密着性を悪くしたり、突出した粉末の箇所からマ
スクに垂直に応力が加わり、マスクパターンを破損させ
たり、マスクを損傷したりすることが多い。Powder taken into the vapor phase growth layer causes a thin layer around the layer or deteriorates the adhesion between the wafer and the growth layer. Also, when devices are later manufactured on a wafer, powder in the growth layer may fall off due to contact with the mask during mask alignment, creating holes in the growth layer.
The steep growth of the growth layer around the powder may cause poor adhesion to the resist, and stress may be applied perpendicularly to the mask from protruding powder areas, damaging the mask pattern or damaging the mask. There are many things.

したがって本発明は、このような従来技術の欠点を解消
し、半導体ウェハの主゛面に結晶性粉末が飛散して気相
成長層のなかに取り込まれることがなく均一な躾を成長
させることのできるＣＶＤ装置を提供することを目的と
する。Therefore, the present invention eliminates the drawbacks of the prior art and makes it possible to grow a uniform layer on the main surface of a semiconductor wafer without scattering crystalline powder and incorporating it into the vapor growth layer. The purpose is to provide a CVD device that can.

本発明によるｃｖｏｉ曹においては、担持手段は半導体
つＩハの主面が下方に向く向きに２習され、気体噴出手
段は担持手段の下方に位置し、半導体ウェハの主面に向
けて下方から気体が噴出される。In the CVOI device according to the present invention, the supporting means is oriented so that the main surface of the semiconductor wafer faces downward, and the gas ejecting means is located below the supporting means, and the gas ejecting means is arranged from below toward the main surface of the semiconductor wafer. Gas is blown out.

次に本発明によるＣＶＤ装置の実施例を添付図面を参照
して詳細に説明する。Next, embodiments of the CVD apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

第１図は本発明によるｃｖｏｓ置の一つの実施例を概念
的に示す図であり、同図においてヒーターブロック１０
にサセプタｆ１２が密着して固定され、サセプタ１２は
シリコンなどの半導体ウェハ１４をつめ１６などでその
鏡面１８を下に向けて担持することができる。FIG. 1 is a diagram conceptually showing one embodiment of a CVOS device according to the present invention, in which a heater block 10 is shown.
A susceptor f12 is fixed in close contact with the susceptor 12, and the susceptor 12 can support a semiconductor wafer 14 such as silicon with the pins 16 or the like with its mirror surface 18 facing downward.

サセプタ１２のの下方にはレール５ｏがウェハ１４の配
列方向に布設され、車輪５２によって可動なる基台５４
がレール５ｏの上に載冒されている。基台５４の上部に
は複数のノズル５６が噴出口５８を上方、すなわちサセ
プタ１２に対向する方向に向けて配設されている。ノズ
ル５６の噴出口５８とは反対側の端部にはバイブロ０が
接続され、これは基台５４の外部のボンベ（図示せず）
に接続されている。これによって噴出口５８からは、ウ
ェハ１４の鏡面１８上にＣＶＤ成長させるための物質を
含むガス、たとえば０２およびＳｉＨ４などがウェハ１
４の鏡面に向けて噴出される。A rail 5o is installed below the susceptor 12 in the direction in which the wafers 14 are arranged, and a base 54 is movable by wheels 52.
is mounted on the rail 5o. A plurality of nozzles 56 are arranged on the upper part of the base 54 with jet ports 58 directed upward, that is, in a direction facing the susceptor 12 . A vibro 0 is connected to the end of the nozzle 56 opposite to the spout 58, which is connected to a cylinder (not shown) outside the base 54.
It is connected to the. As a result, gas containing a substance to be grown by CVD on the mirror surface 18 of the wafer 14, such as 02 and SiH4, is released from the spout 58 onto the wafer 14.
It is ejected towards the mirror surface of 4.

基台５４はレール５０の上を矢印Ａの方向に移動するこ
とができる。この移動中、ガスはノズル５６の噴出口５
８からウェハ１４に向けて真上に吹き上げる。The base 54 can move on the rail 50 in the direction of arrow A. During this movement, the gas flows through the spout 5 of the nozzle 56.
8 and blows directly upward toward the wafer 14.

第２図は本発明によるＣＶＤ＠置の他の実施例を示し、
第１図の実施例と同様の要素は同一の参照符号で示され
ている。この例では、基台５４は固定され、サセプタ１
２およびヒーターブロック１０はアーム２２に装着され
た車輪２４がレール２６の上を走行するごとによって矢
印Ａの方向に移動することができる。FIG. 2 shows another embodiment of the CVD @ device according to the present invention,
Elements similar to the embodiment of FIG. 1 are designated with the same reference numerals. In this example, the base 54 is fixed and the susceptor 1
2 and the heater block 10 can be moved in the direction of arrow A each time a wheel 24 mounted on an arm 22 runs on a rail 26.

第３Ａ図および第３Ｂ図はウェハ１４をサセプタ１２に
装着する方法の他の例を示す断面図である。サセプタ１
２Ａにはウェハ１４を装着する箇所にウェハ１４の外形
より大きい寸法形状の凹み１００が設けられ、この凹み
１００の中にウェハ１４を配置して第３Ａ図に示すよう
にウェハ支持板１０２によって下方からウェハ１４を押
し上げ、第３Ｂ図に示すようにロック部材１０４によっ
て支持′１ｆ１１０２をサセプタ１２Ａに固着させる。3A and 3B are cross-sectional views showing another example of a method for mounting the wafer 14 on the susceptor 12. FIG. Susceptor 1
2A is provided with a recess 100 having a size and shape larger than the outer diameter of the wafer 14 at a location where the wafer 14 is mounted, and the wafer 14 is placed in this recess 100 and is held downward by the wafer support plate 102 as shown in FIG. 3A. Then, as shown in FIG. 3B, the support '1f1102 is fixed to the susceptor 12A by the locking member 104.

支持板１０２には凹み１００に対応してウェハ１４の外
径より小さい寸法形状の開口１０６が設けられている。An opening 106 having a size and shape smaller than the outer diameter of the wafer 14 is provided in the support plate 102 in correspondence with the recess 100 .

したがってこの開口１０６を通してノズル５６からガス
をウェハ１４の主面１８に吹きつけることができる。こ
の構造ではつＩハ１４がサセプタ１２Ａに密着するので
、ヒーターブロック１０からサセプタ１２Ａを介して伝
わる熱が有効にウェハ１４に伝導する。Therefore, gas can be blown onto the main surface 18 of the wafer 14 from the nozzle 56 through this opening 106. In this structure, since the wafer 14 is in close contact with the susceptor 12A, the heat transmitted from the heater block 10 via the susceptor 12A is effectively conducted to the wafer 14.

いずれの実施例においても、ヒーター１Ｏツク１０で発
生した熱はサセプタ１２または１２Ａを介してウェハ１
４に伝わり、ＣＶＤ反応に必要な温度がウェハ、１４の
表面１８に得られる。ノズル５６がサセプタ１２または
１２Ａに対して相対的に徐々に移動するにつれ、下方の
ノズル５６の噴出口５８からガスがサセプタ１２または
１２Ａに向けて噴出される。各ノズル５６から吹き出し
たガスはウェハ１４の表面１８の近傍で適当に混合され
、表面１８の熱によって科学的に反応し、たとえばシリ
コン酸化Ｉｌｌ　（Ｓｉ　０２　）などの気相成長層が
ウェハ１４の表面に均一に形成される。このようにガス
はすべてのウェハ１４にまんべんなく噴出して分布し、
各ウェハ１４に一様の酸化膜層が成長する。In either embodiment, the heat generated by the heater 10 is transferred to the wafer 1 through the susceptor 12 or 12A.
4 and the temperature required for the CVD reaction is obtained at the surface 18 of the wafer 14. As the nozzle 56 gradually moves relative to the susceptor 12 or 12A, gas is ejected from the ejection port 58 of the lower nozzle 56 toward the susceptor 12 or 12A. The gas blown out from each nozzle 56 is appropriately mixed near the surface 18 of the wafer 14, and chemically reacts with the heat of the surface 18, so that a vapor phase growth layer such as silicon oxide Ill (Si 02 ) is formed on the wafer 14. Formed uniformly on the surface. In this way, the gas is ejected and distributed evenly over all the wafers 14,
A uniform oxide layer is grown on each wafer 14.

本発明によるＣＶＤ装置では、ノズル５６の噴出口付近
に形成された結晶性粉末は下方に落下するので、ウェハ
１４の主面１８に付着することははとんどない。ガスの
噴出にともなってこのような粉末の一部が吹き上げられ
て主面１８に付着する可能性はいくらかあるが、その機
会は非常に少なく、たとえ付着したとしても主面１８が
下方を向いているので永くその表面上にとどまる可能性
はさらに少ない。また、サセプタ１２または１２Ａ自体
が下方を向いているので、ウェハ１４をサセプタ１２ま
たは１２Ａに段重するときに結晶性粉末がサセプタ１２
または１２Ａから飛散しても、ウェハ１４の主面１８に
載って残留することは稀である。In the CVD apparatus according to the present invention, the crystalline powder formed near the spout of the nozzle 56 falls downward, so it is unlikely to adhere to the main surface 18 of the wafer 14. There is some possibility that some of this powder will be blown up and attached to the main surface 18 as the gas blows out, but that chance is very small, and even if it does, the main surface 18 will be facing downward. It is even less likely that it will remain on the surface for long. In addition, since the susceptor 12 or 12A itself faces downward, when the wafer 14 is stacked on the susceptor 12 or 12A, the crystalline powder is transferred to the susceptor 12 or 12A.
Even if it scatters from the wafer 12A, it rarely remains on the main surface 18 of the wafer 14.

したがって本発明によれば、結晶性粉末の混在しないき
れいな膜を半導体ウェハに成長させることができる。な
お空気より重い比重の気体、たとえば５ｉＨｉなどは、
従来の方式のようにつＩハの主面が上方を向き、上方か
ら下方に向けてこのような気体が噴出される構造ではウ
ェハの主面付近にこのような気体がよどむ可能性が大き
く、これが膜の均一な形成に悪影響を与えている。しか
し本発明によるＣＶＤ装置ではこのような空気より若干
比重の重い気体の場合でも、ウェハ主面の付近をノズル
が通過して後にその付近にこの気体が残留することはな
く、気相成長のより均一な形成が実現される。Therefore, according to the present invention, a clean film free of crystalline powder can be grown on a semiconductor wafer. Note that gases with specific gravity heavier than air, such as 5iHi,
In the conventional method, where the main surface of the wafer faces upward and the gas is ejected from above to the bottom, there is a high possibility that such gas will remain near the main surface of the wafer. This adversely affects the uniform formation of the film. However, in the CVD apparatus according to the present invention, even in the case of a gas having a specific gravity slightly heavier than air, this gas does not remain in the vicinity of the main surface of the wafer after the nozzle passes, and the vapor phase growth is improved. Uniform formation is achieved.

【図面の簡単な説明】[Brief explanation of drawings]

第１図および第２図は本発明にょるＣＶＤ装置の実施例
を示す概念図１．第３Ａ図および第３Ｂ図は第１図また
は第２ｍＩｆに示すサセプタの他の何を示す断面図であ
る。 主要部分の符号の説明 １０・・・・・・ヒーターブロック １２・・・・・・サセプタ １４・・・・・・半導体ウェハ １６・・・・・・つめ　　　　２６．５ｏ・・・・・・
レール２４．５２・・・・・・車輪 ５６・・・・・・ノズル　　　５８・・・・・・噴出口
１０２・・・・・・ウェハ支持板 出願人　　　パイオニア株式会社 代理人　　　弁理士　腺村元彦 ！／図 ／θ1 and 2 are conceptual diagrams showing an embodiment of a CVD apparatus according to the present invention. 3A and 3B are cross-sectional views showing other parts of the susceptor shown in FIG. 1 or 2 mIf. Explanation of symbols of main parts 10... Heater block 12... Susceptor 14... Semiconductor wafer 16... Pawl 26.5o...
Rail 24.52...Wheel 56...Nozzle 58...Spout port 102...Wafer support plate Applicant Pioneer Corporation Agent Patent attorney Motohiko Sunomura ! /Figure/θ

Claims (2)

【特許請求の範囲】[Claims] （１）　半導体ウェハを加熱のために担持する担持手段
と、該担持手段に対向し、該半導体ウェハの主面に向け
て気体を噴出させる気体噴出手段とを含み、該半導体ウ
ェハの主面に気相成長層を形成するＣＶＤ装置において
、前記担持手段は前記半導体ウェハの主面が下方に向く
向きに配置され、前記気体噴出手段は該担持手段の下方
に位冒して前記半導体ウェハの主面に向けて下方から前
記気体を噴出させることを特徴とするＣＶＤ装置。(1) A supporting means for supporting a semiconductor wafer for heating, and a gas ejecting means facing the supporting means and ejecting gas toward the main surface of the semiconductor wafer, In the CVD apparatus for forming a vapor-phase growth layer, the supporting means is disposed with the main surface of the semiconductor wafer facing downward, and the gas ejecting means is positioned below the supporting means so that the main surface of the semiconductor wafer faces downward. A CVD apparatus characterized in that the gas is ejected from below toward. （２）　前記担持手段は複数の半導体ウェハを担持し、
前記担持手段および気体噴出手段のいずれか一方が他方
に対して該複数の半導体ウェハの配列方向に沿って相対
的に移動することができることを特徴とする特許請求の
範囲第１項記載のＣＶＤＩ習。(2) the supporting means supports a plurality of semiconductor wafers;
The CVDI training according to claim 1, wherein either one of the supporting means and the gas ejecting means is movable relative to the other along the arrangement direction of the plurality of semiconductor wafers. .
JP21252681A 1981-12-29 1981-12-29 Cvd apparatus Pending JPS58116725A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21252681A JPS58116725A (en) 1981-12-29 1981-12-29 Cvd apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21252681A JPS58116725A (en) 1981-12-29 1981-12-29 Cvd apparatus

Publications (1)

Publication Number Publication Date
JPS58116725A true JPS58116725A (en) 1983-07-12

Family

ID=16624126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21252681A Pending JPS58116725A (en) 1981-12-29 1981-12-29 Cvd apparatus

Country Status (1)

Country Link
JP (1) JPS58116725A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01273310A (en) * 1988-04-25 1989-11-01 Nec Corp Manufacturing device for semiconductor integrated circuit device
US5725672A (en) * 1984-02-13 1998-03-10 Jet Process Corporation Apparatus for the high speed, low pressure gas jet deposition of conducting and dielectric thin sold films

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5725672A (en) * 1984-02-13 1998-03-10 Jet Process Corporation Apparatus for the high speed, low pressure gas jet deposition of conducting and dielectric thin sold films
JPH01273310A (en) * 1988-04-25 1989-11-01 Nec Corp Manufacturing device for semiconductor integrated circuit device

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