JPS58111579A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPS58111579A JPS58111579A JP56209221A JP20922181A JPS58111579A JP S58111579 A JPS58111579 A JP S58111579A JP 56209221 A JP56209221 A JP 56209221A JP 20922181 A JP20922181 A JP 20922181A JP S58111579 A JPS58111579 A JP S58111579A
- Authority
- JP
- Japan
- Prior art keywords
- fixed pattern
- pattern noise
- horizontal
- read
- signals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003384 imaging method Methods 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 abstract description 14
- AMHIJMKZPBMCKI-PKLGAXGESA-N ctds Chemical compound O[C@@H]1[C@@H](OS(O)(=O)=O)[C@@H]2O[C@H](COS(O)(=O)=O)[C@H]1O[C@H]([C@@H]([C@H]1OS(O)(=O)=O)OS(O)(=O)=O)O[C@H](CO)[C@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O2 AMHIJMKZPBMCKI-PKLGAXGESA-N 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 5
- 230000005669 field effect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 241000448053 Toya Species 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/625—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of smear
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
本発明に、受光ｓｖｃホトダイオードアレーを設け、読
み出し用水平レジスタとして電荷移送素子（Ｃｈａｒｇ
ｅ Ｔｒａｎｓｆｅｒ Ｄｅｖｉｃｅ、以下ＣＴＤと略
す）を設けた２次元固体撮像装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention includes a light-receiving SVC photodiode array and a charge transfer element (Charg) as a readout horizontal register.
The present invention relates to a two-dimensional solid-state imaging device equipped with an e-Transfer Device (hereinafter abbreviated as CTD).
第１図は、受光部にダイオードアレーを、読み出しレジ
スタにＣＴＤ’ｔ：設けたホトセンサの１例を示すもの
である（笑顔１１８５４−１５７０３０号）。FIG. 1 shows an example of a photosensor in which a diode array is provided in the light receiving section and a CTD't is provided in the readout register (Smile No. 11854-157030).
図中、１はホトダイオード、２は垂直スイッチＭＩ８１
−ランジスタ、３は垂直走査回路、４Ｆｉ垂直垂直線、
５ （５’） 、 ６ （６’）にゲートＭＩＳトラン
ジスタ、７ （７’）は出力アンプ、８（８勺ｔ；水平
レジスタとしてのＣＴＤ、９ （９’）はＣＴＤの入力
部であ、９．１．０（１０勺はブルーミング抑圧回路で
ある。普通、ＣＴＩ）８ （８勺は２相（Ｈ＋。In the figure, 1 is a photodiode, 2 is a vertical switch MI81
- transistor, 3 is vertical scanning circuit, 4Fi vertical vertical line,
5 (5'), 6 (6') are the gate MIS transistors, 7 (7') is the output amplifier, 8 (8 勺t; CTD as a horizontal register, 9 (9') is the input part of the CTD, 9.1.0 (10x is a blooming suppression circuit. Normally, CTI) 8 (8x is 2-phase (H+).
Ｈ！パルス）もしくｉ＄４相で駆ａ烙ｎる。水平走査期
間中に垂直信号線４に蓄積でｆた、ブルーミングや垂直
スメアなどの擬似信号を、水平ブランキング期間の最初
にゲート５と１０を通して外部に掃き出す。その後、第
１図■で示した横−行の画素が選択さｎｌ−行分の信号
に一括して上方の■チャネルのＣＴＤレジスタ８に移送
芒ｆ１それぞｔのメモリ部にストアさｎる。H! Pulse) or i$4 phase drive. Pseudo signals such as blooming and vertical smear accumulated on the vertical signal line 4 during the horizontal scanning period are swept out through gates 5 and 10 at the beginning of the horizontal blanking period. After that, the pixels in the horizontal row shown by ■ in FIG. .
以上の動作を水平ブランキング期間の前半に行ない、後
半は同様に第１図下方の■チイ・ヤ不のＣＴＤレジスタ
に図中＠で示したホトダイオードの横−行分の信号を移
送しストアする。水平走査期間はグー１−６．６’をｏ
ｆｆと己、ＣＴＤをＩＩＡ勧して出力アンプ７．７′か
ら２ラインの信号が同時に読み出芒扛る。２ラインの信
号を同時に読み出すのは、単板カラーセンサとしての画
像の解像度上向上させるためである。第２図に各パルス
、特に水平ブランキング期間創生のタイミングチャート
を示しである。The above operation is performed in the first half of the horizontal blanking period, and in the second half, the signals for the horizontal rows of the photodiodes indicated by @ in the figure are transferred and stored in the same way to the CTD register of ■Chii Yafu at the bottom of Figure 1. . The horizontal scanning period is 1-6.6' o
The signals of two lines are simultaneously read out from the output amplifier 7 and 7' by using the ff, self, and CTD. The purpose of reading two lines of signals at the same time is to improve the resolution of the image as a single-plate color sensor. FIG. 2 shows a timing chart for generating each pulse, especially the horizontal blanking period.
さて、以上の例では、第１図に示したトランジスタ５，
６．１０の特性ばらつきのために固定パターン雑音が発
生し、こｌｒＬヲ完全に無くすことは極めて離しい。Now, in the above example, the transistors 5 and 5 shown in FIG.
Fixed pattern noise occurs due to the variation in characteristics of 6.10, and it is extremely difficult to eliminate this noise completely.
本発明は、以上述べた固定パターン雑音を抑圧して、固
体撮像素子の性能を向上させるものである。The present invention improves the performance of a solid-state image sensor by suppressing the fixed pattern noise described above.
本発明は、水平ブランキング期間に固定パターン雑音を
第１のＢＣＤに呼び込み、続いて光信号と固定パターン
雑音を第２のＢＣＤに呼び込み、水平走査期間に第ｌ、
第２のＢＣＤ出力の差動をとることにより、固定パター
゛ン雑音のない光信号だけを検出する固体撮像素子を実
状するものである。The present invention introduces fixed pattern noise into the first BCD during the horizontal blanking period, then introduces the optical signal and the fixed pattern noise into the second BCD, and during the horizontal scanning period, the l-th,
By differentially outputting the second BCD, a solid-state imaging device is realized which detects only an optical signal without fixed pattern noise.
第３図に本発明の実施例を示す。第３図１〜１０゜１′
〜１０′は第１図と同じであり、本発明の特徴はＣＴＤ
８に並列に設けたＣＴＤ１３（１２はＢＣＤ１３０入力
部、１４は出力部）と、ＣＴＤ８゜１３間に設けた転送
ケート１１、そして差動アンプ１５を付加したことでめ
る。１１′〜１５’１１１１〜１５と同じものである。FIG. 3 shows an embodiment of the present invention. Figure 3 1-10゜1'
~10' is the same as in FIG. 1, and the feature of the present invention is that the CTD
This can be achieved by adding a CTD 13 (12 is an input section of BCD 130, 14 is an output section) provided in parallel with CTD 8, a transfer gate 11 provided between CTD 8 and 13, and a differential amplifier 15. 11' to 15' are the same as 1111 to 15.
この実施例においてに水平ブランキンク期間の動作に次
のようになる。In this embodiment, the operation during the horizontal blanking period is as follows.
■水平ブランキング期間の最初に垂直信号ｍｌ掃除し、
信号ではない余分な電荷をケート１０全通して外部へ掃
き出す。■At the beginning of the horizontal blanking period, clean the vertical signal ml,
Extra charge that is not a signal is passed through the entire gate 10 and swept out to the outside.
■■で外部へ掃き出し切ｆずに垂直信号＊４に残った電
荷を、ゲート５，６．１１を通してＣＴＤ１３に読み込
む（固定パターン雑音の読み込み）。The charge remaining in the vertical signal *4 without being swept out to the outside by ■■ is read into the CTD 13 through the gates 5 and 6.11 (reading of fixed pattern noise).
■再び■の動作を竹なう。■Let's take the action of ■ again.
■■で外部へ掃き出し切ｆすに垂直信号ＩＮ４に残った
電荷と、画素■およびその横方向−行分の光信号電荷金
、ケート５，６全通してＣＴＤ８に読み込む（固定パタ
ーン雑音と光信号電荷の絖み込み）。The charge remaining in the vertical signal IN4 after being swept out to the outside by signal charge intrusion).
以上の動作の後、画素■およびそ、の横方向−行分の光
信号電荷に対しても■〜■の過程と同様に、ＣＴＤ８’
、１３’に読み込む。After the above operation, the CTD8'
, 13'.
水平走査期間に、ゲート５．６．５’、 ６’、 １１
゜１１’１ｋｏｆｆｌ、てＣＴＤ８，１３，８’、１３
’を駆動し、光信号と固定パターン雑音、固定パターン
雑音が同じタイミングで順次読み出さｆＬ、差動アンプ
１５．１５’によシ光信号成分だけを出力する。During the horizontal scanning period, gates 5.6.5', 6', 11
゜11'1koffl, teCTD8,13,8',13
' is driven, and the optical signal, fixed pattern noise, and fixed pattern noise are sequentially read out at the same timing fL, and only the optical signal component is output to the differential amplifier 15 and 15'.
このようにすｎば、従来の実施例で問題でめった固定パ
ターン雑音を十分抑圧でき、同時に、スメア現象に対し
ても全く同じ原理で十分抑圧できる。したがって本発明
によシ固体撮像素子の性能の着しい向上全期待する事が
できる。In this way, it is possible to sufficiently suppress fixed pattern noise, which has rarely been a problem in conventional embodiments, and at the same time, smear phenomenon can also be sufficiently suppressed using exactly the same principle. Therefore, the present invention can be expected to greatly improve the performance of solid-state imaging devices.
第４図に本発明の別の実施例を示す。この実施例の特長
は、水平レジスタとしてのＣＴＤが、３相躯動ＣＴＤ（
４１１Ｆ許屋９２８７１１）である事である。なお第４
図中、８．１３以外は島３図と同じものである。ＣＴＤ
８，１３Ｕ３相のレジスタであるので、３相のうち２つ
の相に対応する箇所に情報會畜積することができる。し
たがって２画素（図中■と＠）からの２つの信号を一つ
のＣＴＤ８にストアすることがＬ′きる。この実施例に
おいては水平ブランキング期間の動作龜次のようＫなる
。FIG. 4 shows another embodiment of the invention. The feature of this embodiment is that the CTD as a horizontal register is a three-phase sliding CTD (
411F Toya 928711). Furthermore, the fourth
In the figure, everything except 8.13 is the same as Island 3. CTD
Since it is an 8,13U three-phase register, information can be accumulated in locations corresponding to two of the three phases. Therefore, two signals from two pixels (■ and @ in the figure) can be stored in one CTD8. In this embodiment, the operation during the horizontal blanking period is as follows.
■水平ブランキング期間の最初に垂直信号＠４を掃除し
、信号でにない余分な電荷をゲート１０を通して外部へ
掃き出す。■ At the beginning of the horizontal blanking period, the vertical signal @4 is cleaned, and excess charge not included in the signal is swept out through the gate 10.
■■で外部に掃き出し切ｎすに垂直信号線４に残った電
荷を、ゲート５，６．１１を通してＣＴＤ１３に読み込
む（固定パターン雑音の読み込みン。The charge remaining on the vertical signal line 4 after being swept out to the outside by ■■ is read into the CTD 13 through the gates 5, 6, and 11 (fixed pattern noise reading).
■再び■の動作を行なう。■Repeat the operation of ■.
■■で外部に掃き出し切１′Ｌずに垂直信号線４に残っ
た電荷と、画素■およびその横方向−行分の光、信号電
荷を、ゲート５，６を通してＣＴＤ８に読み込む（固定
パターン雑音と光信号電荷の読み込み）。The charges remaining on the vertical signal line 4 without being swept out to the outside by ■■, and the light and signal charges for the pixel ■ and its horizontal rows are read into the CTD 8 through gates 5 and 6 (fixed pattern noise and optical signal charge loading).
以上の動作の後、ｅＴＤ’ｔｌ相分たけシフトし、次い
で画素■に骸当する一行分の光信号電荷に対しても■〜
■の過程を経て、”ＣＴＤ１３，８にそｎぞれ、固定パ
ターン雑音、固定パターン雑音と光信号１ｒ＠み込む。After the above operation, the eTD'tl phase is shifted, and then the optical signal charge for one row corresponding to the pixel ■ is also shifted to
Through the process (2), fixed pattern noise, fixed pattern noise and optical signal 1r are incorporated into CTDs 13 and 8, respectively.
水平走査期間に、ゲート５，６．１１をｏｆｆシてＣＴ
Ｄ８，１３を駆動し、光信号と固定パターン雑音、固定
パターンが同じタイミングで順次読み出さ扛、差動アン
プ１５により光信号成分だけを出力する。このようにす
れは、固定パターン雑音、スメア現象の十分な抑圧が可
能となるはかりでなく、ビン数の低減にも効果がある。During the horizontal scanning period, gates 5 and 6.11 are turned off and CT is performed.
The optical signal, the fixed pattern noise, and the fixed pattern are sequentially read out at the same timing by driving the D8 and D13, and the differential amplifier 15 outputs only the optical signal component. In this way, the scale does not enable sufficient suppression of fixed pattern noise and smear phenomenon, and is also effective in reducing the number of bins.
本発明によれば、固定パターン雑音を含む光信号と固定
パターン雑音との差信号會得ることができるので、原理
的に固定パターン雑音を無くすることができる。さらに
、スメア現象についても全く同じ原理で完全に抑圧でき
る。According to the present invention, since it is possible to obtain a difference signal between an optical signal including fixed pattern noise and the fixed pattern noise, fixed pattern noise can be eliminated in principle. Furthermore, the smear phenomenon can also be completely suppressed using exactly the same principle.
第１図ｒｉＣＴＤレジスタ読み出し方式によるＭＯ８型
撮像装置の構成を示す図、第２図は第１図における駆動
パルスを示す図、第３図は本考案の実施例を示す図、第
４図は本発明の他の実施例を示す図である。 □
１・・・ホトダイオード、２・・・垂直スイッチ（絶縁
ゲート型電界効果トランジスタ等）、３・・・垂直走査
回路、４・・・垂直信号出力線、５，６・・・転送ゲー
ト（絶縁ケート型電界効果トラン？スタ等）、８・・・
ＣＴＤ、１０・・・リセットゲート（絶縁ゲート型電界
効果トランジスタ等）、１１・・・転送ケート、第 ３
目
＆Ａ４ 圓
第１頁の続き
■発 明 者 尾崎俊文
国分寺市東恋ケ窪−１丁目２８０番
地株式会社日立製作所中央研究
所内
０発 明 者 秋山俊之
国分寺市東恋ケ窪１丁目２８０番
地株式会社日立製作所中央研究
所内
０発 明 者 青木正和
国分寺市東恋ケ窪１丁目２８０番
地株式会社日立製作所中央研究
所内
０発 明 者 今出宅哉
横浜市戸塚区吉田町２９２番地株
式会社日立製作所家電研究所内
０発 明 者 高橋健二
国分寺市東恋ケ窪１丁目２８０番
地株式会社日□立製作所中央研究
０発 明 者 長原脩策
国分寺市東恋ケ窪１丁目２８０番
地株式会社日立製作所中央研究
所内Fig. 1 is a diagram showing the configuration of an MO8 type imaging device using the riCTD register readout method, Fig. 2 is a diagram showing the drive pulses in Fig. 1, Fig. 3 is a diagram showing an embodiment of the present invention, and Fig. 4 is a diagram showing the present invention. FIG. 7 is a diagram showing another embodiment of the invention. □ 1... Photodiode, 2... Vertical switch (insulated gate field effect transistor, etc.), 3... Vertical scanning circuit, 4... Vertical signal output line, 5, 6... Transfer gate (insulated Cate type field effect transistor etc.), 8...
CTD, 10... Reset gate (insulated gate field effect transistor, etc.), 11... Transfer gate, 3rd
Continuing from page 1 of En 1 ■ Inventor: Toshiyuki Ozaki, Hitachi, Ltd., Central Research Laboratory, 1-280 Higashi-Koigakubo, Kokubunji City, Hitachi, Ltd. Author: Toshiyuki Akiyama, Hitachi, Ltd., Central Research Laboratory, 1-280 Higashi-Koigakubo, Kokubunji City, Ltd. Inventor: Masakazu Aoki, Hitachi, Ltd. Central Research Laboratory, 1-280 Higashi-Koigakubo, Kokubunji City, Japan Inventor: Takuya Imade, Hitachi, Ltd. Home Appliance Research Laboratory, 292 Yoshida-cho, Totsuka-ku, Yokohama City, Japan Inventor: Kenji Takahashi, Kokubunji City 1-280 Higashi-Koigakubo Hitachi, Ltd. Central Research Laboratory Author: Shusaku Nagahara 1-280 Higashi-Koigakubo, Kokubunji City, Hitachi, Ltd. Central Research Laboratory
Claims (1)
読み出し、その後、■垂直信号線の信号を水平レジスタ
でおるＣ Ｔｌ） （ｃｈａｒｇｅ ’ｌ”ｒａｎｓｆ
ｅｒＤｅｖｉｃｅ）に読み出し、■水平走査期間中はＣ
ＴＤを駆動して信号読み出しを行なう固体撮像装置にお
いて、水平レジスタ部が、転送ゲートをはさむ二本のＣ
ＴＤから構成さすることを特徴とする固体撮像装置。1. During the horizontal blanking period, read out the pseudo signal on the vertical signal line, and then filter the signal on the vertical signal line with the horizontal register.
erDevice), and C during the horizontal scanning period.
In a solid-state imaging device that reads signals by driving a TD, a horizontal register section is connected to two Cs sandwiching a transfer gate.
A solid-state imaging device comprising a TD.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56209221A JPS58111579A (en) | 1981-12-25 | 1981-12-25 | Solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56209221A JPS58111579A (en) | 1981-12-25 | 1981-12-25 | Solid-state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58111579A true JPS58111579A (en) | 1983-07-02 |
Family
ID=16569349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56209221A Pending JPS58111579A (en) | 1981-12-25 | 1981-12-25 | Solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58111579A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6086977A (en) * | 1983-10-18 | 1985-05-16 | Hitachi Ltd | Solid-state image pickup device |
| JPS62185471A (en) * | 1986-02-10 | 1987-08-13 | Hitachi Ltd | Solid-state image pickup element |
| EP0232593A2 (en) * | 1985-11-15 | 1987-08-19 | Canon Kabushiki Kaisha | Photoelectric transducer apparatus |
| US5311320A (en) * | 1986-09-30 | 1994-05-10 | Canon Kabushiki Kaisha | Solid state image pickup apparatus |
| US5331421A (en) * | 1985-11-15 | 1994-07-19 | Canon Kabushiki Kaisha | Solid state image pickup apparatus |
| US5737016A (en) * | 1985-11-15 | 1998-04-07 | Canon Kabushiki Kaisha | Solid state image pickup apparatus for reducing noise |
| US5771070A (en) * | 1985-11-15 | 1998-06-23 | Canon Kabushiki Kaisha | Solid state image pickup apparatus removing noise from the photoelectric converted signal |
| US6538693B1 (en) | 1996-01-24 | 2003-03-25 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus having reset noise holding and removing units |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5646374A (en) * | 1979-09-11 | 1981-04-27 | Siemens Ag | Monolithic integrated circuit having twoo dimensional image sensor and method of operating same |
-
1981
- 1981-12-25 JP JP56209221A patent/JPS58111579A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5646374A (en) * | 1979-09-11 | 1981-04-27 | Siemens Ag | Monolithic integrated circuit having twoo dimensional image sensor and method of operating same |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6086977A (en) * | 1983-10-18 | 1985-05-16 | Hitachi Ltd | Solid-state image pickup device |
| EP0232593A2 (en) * | 1985-11-15 | 1987-08-19 | Canon Kabushiki Kaisha | Photoelectric transducer apparatus |
| US5019702A (en) * | 1985-11-15 | 1991-05-28 | Canon Kabushiki Kaisha | Photoelectric transducer apparatus having a plurality of transducer elements and a plurality of capacitor elements |
| EP0576104A3 (en) * | 1985-11-15 | 1994-05-18 | Canon Kk | Photoelectric transducer apparatus |
| US5331421A (en) * | 1985-11-15 | 1994-07-19 | Canon Kabushiki Kaisha | Solid state image pickup apparatus |
| US5737016A (en) * | 1985-11-15 | 1998-04-07 | Canon Kabushiki Kaisha | Solid state image pickup apparatus for reducing noise |
| US5771070A (en) * | 1985-11-15 | 1998-06-23 | Canon Kabushiki Kaisha | Solid state image pickup apparatus removing noise from the photoelectric converted signal |
| US6747699B2 (en) | 1985-11-15 | 2004-06-08 | Canon Kabushiki Kaisha | Solid state image pickup apparatus |
| JPS62185471A (en) * | 1986-02-10 | 1987-08-13 | Hitachi Ltd | Solid-state image pickup element |
| US5311320A (en) * | 1986-09-30 | 1994-05-10 | Canon Kabushiki Kaisha | Solid state image pickup apparatus |
| US6538693B1 (en) | 1996-01-24 | 2003-03-25 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus having reset noise holding and removing units |
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