JPS58102233A - Photomask - Google Patents

Photomask

Info

Publication number
JPS58102233A
JPS58102233A JP56201238A JP20123881A JPS58102233A JP S58102233 A JPS58102233 A JP S58102233A JP 56201238 A JP56201238 A JP 56201238A JP 20123881 A JP20123881 A JP 20123881A JP S58102233 A JPS58102233 A JP S58102233A
Authority
JP
Japan
Prior art keywords
substrate
photomask
thin film
film pattern
thermal expansion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56201238A
Other languages
Japanese (ja)
Other versions
JPS6336659B2 (en
Inventor
Akira Morishige
明 森重
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56201238A priority Critical patent/JPS58102233A/en
Publication of JPS58102233A publication Critical patent/JPS58102233A/en
Publication of JPS6336659B2 publication Critical patent/JPS6336659B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To increase the accuracy and durability of a photomask having an opaque thin film pattern on a part of the surface of a transparent substrate by adhering a transparent substrate to the back side of said substrate with an adhesive so as to reduce the dependency of the coefft. of thermal expansion on temp. CONSTITUTION:An opaque thin film pattern 2 is formed on the 1st substrate 3 of inexpensive soda lime glass, and the 2nd substrate 4 of thin quartz glass is adhered to the back side of the subtrate 3 with an adhesive 5 such as balsam. Thus, the substrate 3 is converted into a composite substrate using the thin quartz glass as the substrate 4, and the coefft. of thermal expansion of the soda lime glass can be reduced furthermore. Accordingly, an inexpensive photomask independent of temp. and having high accuracy and durability is obtd.

Description

【発明の詳細な説明】 本発明は中導体装置、集積回路装置などの製造に用いら
れるフォトマスクに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photomask used for manufacturing medium conductor devices, integrated circuit devices, etc.

従来フォトマスクは１枚の薄いガラス基板上に薄膜パタ
ーンが形成されているため、マスクのパターン形状が微
細化されるにしたがってガラス基板が有する熱膨張率に
よってパターン形状が変化し易すくなったり、高密度パ
ターンで貴重なフォトマスクの完成品が破損したりする
欠点があった。Conventionally, photomasks have a thin film pattern formed on a single thin glass substrate, so as the pattern shape of the mask becomes finer, the pattern shape tends to change depending on the coefficient of thermal expansion of the glass substrate. There was a drawback that the high-density pattern could damage the valuable finished photomask.

そのため熱膨張率の小さな石英ガラスが高品質なマスク
には用いられるが高価である欠点があった。For this reason, quartz glass with a small coefficient of thermal expansion is used for high-quality masks, but it has the drawback of being expensive.

本発明は上記欠点を除去し、高品質で耐久性のあるフォ
トマスクを提供することを目的とする。The present invention aims to eliminate the above drawbacks and provide a high quality and durable photomask.

そしてその目的は光に対して透明な基板表面の一部に光
に対して不透明な薄膜パターンを有する第１の基板の裏
面に光に対して透明な第２の基板を接着層を介して密着
したととを特徴とするフォトマスクを提供するととによ
って達成される。The purpose is to attach a second substrate that is transparent to light to the back side of the first substrate, which has a thin film pattern that is opaque to light on a part of the surface of the substrate that is transparent to light, via an adhesive layer. This is achieved by providing a photomask characterized by the following.

以下本発明による実施例を図面によシ詳説する。Embodiments of the present invention will be explained in detail below with reference to the drawings.

第１図は従来の７オトマスクを示す断面図であり、基板
１上に薄膜パターン２が形成されている。第２図は本発
明によるフォトマスクの断面図であり、薄膜パターン２
が形成され第１の基板３と第２の基板４とが接着層５を
介して密着している。FIG. 1 is a sectional view showing a conventional 7-otomask, in which a thin film pattern 2 is formed on a substrate 1. FIG. 2 is a cross-sectional view of a photomask according to the present invention, and shows a thin film pattern 2.
is formed, and the first substrate 3 and the second substrate 4 are in close contact with each other via the adhesive layer 5.

通常フォトマスク基板ｌの厚さは約００９インチのもの
が用いられるが本発明によるフォトマスクは第１の基板
３と第２の基板４とを例えばバルサムなどを用い接着し
て従来の７オトマスク厚と同じ０．０９インチとするこ
とができる。ここで例えば［１の基板３には低コストな
ソーダライムガラスを用い、第２の基板４には薄い石英
ガラスを用いることにより、ソーダライムガラスの熱膨
張率より小さくすることができる。また複合ガラス化に
より機械的強度が向上する効果を有する。ことで高価な
石英ガラスは１枚で用いる場合の半分以下の膜厚にする
ことが可能であり大幅なコストダウン効果を有する。Normally, the thickness of the photomask substrate l is about 0.09 inch, but the photomask according to the present invention has a thickness of about 0.009 inches, but the photomask according to the present invention is made by bonding the first substrate 3 and the second substrate 4 using, for example, balsam. It can be set to 0.09 inch, which is the same as . Here, for example, by using low-cost soda lime glass for the first substrate 3 and using thin quartz glass for the second substrate 4, the coefficient of thermal expansion can be made smaller than that of soda lime glass. Furthermore, the composite vitrification has the effect of improving mechanical strength. As a result, the thickness of expensive quartz glass can be reduced to less than half that when a single sheet is used, resulting in a significant cost reduction effect.

ま九本発明の他の実施例として、例えば第２の基板４を
レジストの感光波長として用いられる側光用の高圧水銀
灯のＨラインおよびＩラインの波長のみを透過させるよ
うなバンドパスフィルタとして構成することが可能であ
る。この感光波長の狭帯域化により、より微細なパター
ンの霧光、浅漬およびエツチングが可能となる。As another embodiment of the present invention, for example, the second substrate 4 is configured as a bandpass filter that transmits only the H line and I line wavelengths of a high-pressure mercury lamp for side light, which are used as the photosensitive wavelengths of the resist. It is possible to do so. This narrowing of the photosensitive wavelength band makes it possible to perform fog light, shallow dipping, and etching of finer patterns.

本発明によれば、温度による変化がなく高精度で耐久性
の強いフォトマスクを低コストで製造することが可能と
なる。According to the present invention, it is possible to manufacture at low cost a highly accurate and durable photomask that does not change due to temperature.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の７オトマスクを示すマスク断面図であり
、第２図は本発明によるフォトマスクの断面図を示して
いる。 ここで、ｌは基板、２は薄膜パターン、　３＃′ｉ第１
の基板、４は第２の基板、５は接着層を示している。FIG. 1 is a cross-sectional view of a conventional 7-oto mask, and FIG. 2 is a cross-sectional view of a photomask according to the present invention. Here, l is the substrate, 2 is the thin film pattern, 3#'i first
, 4 is a second substrate, and 5 is an adhesive layer.

Claims (1)

【特許請求の範囲】[Claims] 光に対して透明な基板表面の一部に光に対して不透明な
薄膜パターンを有するフォトマスクにおいて、前記薄膜
パターンを有するｌ！ｌの基板の裏面に光に対して透明
な第２の基板を接着層を介して密着したことｔ％黴とす
るフォトマスク。In a photomask having a thin film pattern that is opaque to light on a part of the surface of a substrate that is transparent to light, l! A photomask in which a second substrate transparent to light is closely attached to the back surface of a first substrate via an adhesive layer.
JP56201238A 1981-12-14 1981-12-14 Photomask Granted JPS58102233A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56201238A JPS58102233A (en) 1981-12-14 1981-12-14 Photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56201238A JPS58102233A (en) 1981-12-14 1981-12-14 Photomask

Publications (2)

Publication Number Publication Date
JPS58102233A true JPS58102233A (en) 1983-06-17
JPS6336659B2 JPS6336659B2 (en) 1988-07-21

Family

ID=16437622

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56201238A Granted JPS58102233A (en) 1981-12-14 1981-12-14 Photomask

Country Status (1)

Country Link
JP (1) JPS58102233A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002090982A (en) * 2000-09-13 2002-03-27 Kimoto & Co Ltd Method for manufacturing photomask, and photomask
JP2002169264A (en) * 2000-11-30 2002-06-14 Kimoto & Co Ltd Method of making photomask and photomask

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0552253U (en) * 1991-12-20 1993-07-13 東洋ラジエーター株式会社 Fuel cooler for internal combustion engine

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002090982A (en) * 2000-09-13 2002-03-27 Kimoto & Co Ltd Method for manufacturing photomask, and photomask
JP2002169264A (en) * 2000-11-30 2002-06-14 Kimoto & Co Ltd Method of making photomask and photomask

Also Published As

Publication number Publication date
JPS6336659B2 (en) 1988-07-21

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