JPS5799775A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5799775A
JPS5799775A JP17465380A JP17465380A JPS5799775A JP S5799775 A JPS5799775 A JP S5799775A JP 17465380 A JP17465380 A JP 17465380A JP 17465380 A JP17465380 A JP 17465380A JP S5799775 A JPS5799775 A JP S5799775A
Authority
JP
Japan
Prior art keywords
coated
gate electrode
film
gate
psg
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17465380A
Other languages
Japanese (ja)
Inventor
Sunao Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP17465380A priority Critical patent/JPS5799775A/en
Priority to EP19810110288 priority patent/EP0054259B1/en
Priority to DE8181110288T priority patent/DE3175081D1/en
Publication of JPS5799775A publication Critical patent/JPS5799775A/en
Priority to US06/645,536 priority patent/US4622735A/en
Priority to US06/832,647 priority patent/US4830971A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
    • H01L29/41783—Raised source or drain electrodes self aligned with the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To inhibit a short channel effect, and to accelerate operation and increase dielectric resistance by a method wherein a side surface of a gate electrode is coated with an insulator, a metallic film is deposited, a metallic silicide, is formed, and the remaining metallic film is removed. CONSTITUTION:A field oxide film 102, a gate oxide film 103, the P doped poly Si gate electrode 104, an N type source 105 and a drain 105' are formed to a P type Si substrate 101. The surface is coated with SiO2 106, and the SiO2 106 is left only on the side surface of the gate 104 through sputtring etching. When W 107 is evaorated under vacuum and baked for one hour at 800 deg.C in N2, the WSi2 109 is formed. The W film 110 not reacted is removed, PSG 111 electrode windows 112 and Al wiring 113 are formed according to a normal method, the surface is coated with PSG 114 again, and a process is completed. According to this constitution, since the Si silicide is shaped to the gate electrode by self- matching, integration to a high degree is not obstructed, the source and the drain can be formed while a shallow junction is formed and the short channel effect is prevented, the delay of signals is obviated, and the breakdown voltage of the surface can be increased.
JP17465380A 1980-12-12 1980-12-12 Manufacture of semiconductor device Pending JPS5799775A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP17465380A JPS5799775A (en) 1980-12-12 1980-12-12 Manufacture of semiconductor device
EP19810110288 EP0054259B1 (en) 1980-12-12 1981-12-09 Method of manufacturing a semiconductor device of the mis type
DE8181110288T DE3175081D1 (en) 1980-12-12 1981-12-09 Method of manufacturing a semiconductor device of the mis type
US06/645,536 US4622735A (en) 1980-12-12 1984-08-29 Method for manufacturing a semiconductor device utilizing self-aligned silicide regions
US06/832,647 US4830971A (en) 1980-12-12 1986-02-25 Method for manufacturing a semiconductor device utilizing self-aligned contact regions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17465380A JPS5799775A (en) 1980-12-12 1980-12-12 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5799775A true JPS5799775A (en) 1982-06-21

Family

ID=15982347

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17465380A Pending JPS5799775A (en) 1980-12-12 1980-12-12 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5799775A (en)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59205759A (en) * 1983-04-01 1984-11-21 Hitachi Ltd Mis type field-effect transistor
JPS6037777A (en) * 1983-08-10 1985-02-27 Seiko Epson Corp Semiconductor device
JPS6037776A (en) * 1983-08-10 1985-02-27 Seiko Epson Corp Manufacture of semiconductor device
JPS60149166A (en) * 1983-08-12 1985-08-06 テクトロニツクス・インコーポレイテツド Method of producing integrated circuit
JPS6156460A (en) * 1984-08-28 1986-03-22 Nec Corp Semiconductor device and manufacture thereof
JPS6181667A (en) * 1984-06-25 1986-04-25 テキサス　インスツルメンツ　インコ−ポレイテツド Transistor device and making thereof
JPS6193670A (en) * 1984-08-07 1986-05-12 テキサス　インスツルメンツ　インコ−ポレイテツド Making of mos-vlsi semiconductor device having metal gate and covered source/ drain
JPS61129873A (en) * 1984-11-28 1986-06-17 Seiko Epson Corp Equipment for manufacturing semiconductor
JPS61265868A (en) * 1985-05-21 1986-11-25 Hitachi Ltd Manufacture of semiconductor device
JPS624371A (en) * 1985-06-28 1987-01-10 ノ−ザン・テレコム・リミテツド Manufacture of vlsi circuit using heat resistant metal silicide
JPS6266679A (en) * 1985-09-19 1987-03-26 Fujitsu Ltd Manufacture of semiconductor device
JPS6294937A (en) * 1985-10-21 1987-05-01 Nec Corp Manufacture of semiconductor integrated circuit device
JPS62502301A (en) * 1985-03-07 1987-09-03 ステイフテルセン　インステイツテツト　フオ−ル　ミクロバ−グステクニツク　ビツド　テクニスカ　ホ−グスコラン　アイ　ストツクホルム Integrated circuit manufacturing method
JPS62281472A (en) * 1986-05-30 1987-12-07 Yamaha Corp Manufacture of semiconductor device
JPS63168052A (en) * 1986-12-29 1988-07-12 Nec Corp Thin film transistor and manufacture thereof
JPH0778782A (en) * 1993-06-18 1995-03-20 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
JPH07161663A (en) * 1993-12-03 1995-06-23 Nec Corp Manufacture of semiconductor device
US5593923A (en) * 1994-12-06 1997-01-14 Nec Corporation Method of fabricating semiconductor device having refractory metal silicide layer on impurity region using damage implant and single step anneal
US5962897A (en) * 1992-06-18 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6624477B1 (en) 1992-10-09 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5235983A (en) * 1975-09-17 1977-03-18 Hitachi Ltd Manufacturing method of field effective transistor
JPS5444482A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Mos type semiconductor device and its manufacture
JPS55125649A (en) * 1979-03-22 1980-09-27 Nec Corp Production of semiconductor integrated circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5235983A (en) * 1975-09-17 1977-03-18 Hitachi Ltd Manufacturing method of field effective transistor
JPS5444482A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Mos type semiconductor device and its manufacture
JPS55125649A (en) * 1979-03-22 1980-09-27 Nec Corp Production of semiconductor integrated circuit

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59205759A (en) * 1983-04-01 1984-11-21 Hitachi Ltd Mis type field-effect transistor
JPS6037777A (en) * 1983-08-10 1985-02-27 Seiko Epson Corp Semiconductor device
JPS6037776A (en) * 1983-08-10 1985-02-27 Seiko Epson Corp Manufacture of semiconductor device
JPS60149166A (en) * 1983-08-12 1985-08-06 テクトロニツクス・インコーポレイテツド Method of producing integrated circuit
JPH0620078B2 (en) * 1984-06-25 1994-03-16 テキサス インスツルメンツ インコ−ポレイテツド Transistor device manufacturing method and semiconductor device manufacturing method
JPS6181667A (en) * 1984-06-25 1986-04-25 テキサス　インスツルメンツ　インコ−ポレイテツド Transistor device and making thereof
JPS6193670A (en) * 1984-08-07 1986-05-12 テキサス　インスツルメンツ　インコ−ポレイテツド Making of mos-vlsi semiconductor device having metal gate and covered source/ drain
JPS6156460A (en) * 1984-08-28 1986-03-22 Nec Corp Semiconductor device and manufacture thereof
JPS61129873A (en) * 1984-11-28 1986-06-17 Seiko Epson Corp Equipment for manufacturing semiconductor
JPS62502301A (en) * 1985-03-07 1987-09-03 ステイフテルセン　インステイツテツト　フオ−ル　ミクロバ−グステクニツク　ビツド　テクニスカ　ホ−グスコラン　アイ　ストツクホルム Integrated circuit manufacturing method
JPS61265868A (en) * 1985-05-21 1986-11-25 Hitachi Ltd Manufacture of semiconductor device
JPS624371A (en) * 1985-06-28 1987-01-10 ノ−ザン・テレコム・リミテツド Manufacture of vlsi circuit using heat resistant metal silicide
JPS6266679A (en) * 1985-09-19 1987-03-26 Fujitsu Ltd Manufacture of semiconductor device
JPS6294937A (en) * 1985-10-21 1987-05-01 Nec Corp Manufacture of semiconductor integrated circuit device
JPS62281472A (en) * 1986-05-30 1987-12-07 Yamaha Corp Manufacture of semiconductor device
JPS63168052A (en) * 1986-12-29 1988-07-12 Nec Corp Thin film transistor and manufacture thereof
US5962897A (en) * 1992-06-18 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6455875B2 (en) 1992-10-09 2002-09-24 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having enhanced field mobility
US6624477B1 (en) 1992-10-09 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6790749B2 (en) 1992-10-09 2004-09-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7109108B2 (en) 1992-10-09 2006-09-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device having metal silicide
US7602020B2 (en) 1992-10-09 2009-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US7723788B2 (en) 1992-10-09 2010-05-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US8017506B2 (en) 1992-10-09 2011-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JPH0778782A (en) * 1993-06-18 1995-03-20 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
JPH07161663A (en) * 1993-12-03 1995-06-23 Nec Corp Manufacture of semiconductor device
US5565383A (en) * 1993-12-03 1996-10-15 Nec Corporation Method for selective formation of silicide films without formation on vertical gate sidewalls using collimated sputtering
US5593923A (en) * 1994-12-06 1997-01-14 Nec Corporation Method of fabricating semiconductor device having refractory metal silicide layer on impurity region using damage implant and single step anneal

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