JPS5799775A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5799775A JPS5799775A JP17465380A JP17465380A JPS5799775A JP S5799775 A JPS5799775 A JP S5799775A JP 17465380 A JP17465380 A JP 17465380A JP 17465380 A JP17465380 A JP 17465380A JP S5799775 A JPS5799775 A JP S5799775A
- Authority
- JP
- Japan
- Prior art keywords
- coated
- gate electrode
- film
- gate
- psg
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 230000000694 effects Effects 0.000 abstract 2
- 229910021332 silicide Inorganic materials 0.000 abstract 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910008814 WSi2 Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
- H01L29/41783—Raised source or drain electrodes self aligned with the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To inhibit a short channel effect, and to accelerate operation and increase dielectric resistance by a method wherein a side surface of a gate electrode is coated with an insulator, a metallic film is deposited, a metallic silicide, is formed, and the remaining metallic film is removed. CONSTITUTION:A field oxide film 102, a gate oxide film 103, the P doped poly Si gate electrode 104, an N type source 105 and a drain 105' are formed to a P type Si substrate 101. The surface is coated with SiO2 106, and the SiO2 106 is left only on the side surface of the gate 104 through sputtring etching. When W 107 is evaorated under vacuum and baked for one hour at 800 deg.C in N2, the WSi2 109 is formed. The W film 110 not reacted is removed, PSG 111 electrode windows 112 and Al wiring 113 are formed according to a normal method, the surface is coated with PSG 114 again, and a process is completed. According to this constitution, since the Si silicide is shaped to the gate electrode by self- matching, integration to a high degree is not obstructed, the source and the drain can be formed while a shallow junction is formed and the short channel effect is prevented, the delay of signals is obviated, and the breakdown voltage of the surface can be increased.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17465380A JPS5799775A (en) | 1980-12-12 | 1980-12-12 | Manufacture of semiconductor device |
EP19810110288 EP0054259B1 (en) | 1980-12-12 | 1981-12-09 | Method of manufacturing a semiconductor device of the mis type |
DE8181110288T DE3175081D1 (en) | 1980-12-12 | 1981-12-09 | Method of manufacturing a semiconductor device of the mis type |
US06/645,536 US4622735A (en) | 1980-12-12 | 1984-08-29 | Method for manufacturing a semiconductor device utilizing self-aligned silicide regions |
US06/832,647 US4830971A (en) | 1980-12-12 | 1986-02-25 | Method for manufacturing a semiconductor device utilizing self-aligned contact regions |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17465380A JPS5799775A (en) | 1980-12-12 | 1980-12-12 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5799775A true JPS5799775A (en) | 1982-06-21 |
Family
ID=15982347
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17465380A Pending JPS5799775A (en) | 1980-12-12 | 1980-12-12 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5799775A (en) |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59205759A (en) * | 1983-04-01 | 1984-11-21 | Hitachi Ltd | Mis type field-effect transistor |
JPS6037777A (en) * | 1983-08-10 | 1985-02-27 | Seiko Epson Corp | Semiconductor device |
JPS6037776A (en) * | 1983-08-10 | 1985-02-27 | Seiko Epson Corp | Manufacture of semiconductor device |
JPS60149166A (en) * | 1983-08-12 | 1985-08-06 | テクトロニツクス・インコーポレイテツド | Method of producing integrated circuit |
JPS6156460A (en) * | 1984-08-28 | 1986-03-22 | Nec Corp | Semiconductor device and manufacture thereof |
JPS6181667A (en) * | 1984-06-25 | 1986-04-25 | テキサス インスツルメンツ インコ−ポレイテツド | Transistor device and making thereof |
JPS6193670A (en) * | 1984-08-07 | 1986-05-12 | テキサス インスツルメンツ インコ−ポレイテツド | Making of mos-vlsi semiconductor device having metal gate and covered source/ drain |
JPS61129873A (en) * | 1984-11-28 | 1986-06-17 | Seiko Epson Corp | Equipment for manufacturing semiconductor |
JPS61265868A (en) * | 1985-05-21 | 1986-11-25 | Hitachi Ltd | Manufacture of semiconductor device |
JPS624371A (en) * | 1985-06-28 | 1987-01-10 | ノ−ザン・テレコム・リミテツド | Manufacture of vlsi circuit using heat resistant metal silicide |
JPS6266679A (en) * | 1985-09-19 | 1987-03-26 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS6294937A (en) * | 1985-10-21 | 1987-05-01 | Nec Corp | Manufacture of semiconductor integrated circuit device |
JPS62502301A (en) * | 1985-03-07 | 1987-09-03 | ステイフテルセン インステイツテツト フオ−ル ミクロバ−グステクニツク ビツド テクニスカ ホ−グスコラン アイ ストツクホルム | Integrated circuit manufacturing method |
JPS62281472A (en) * | 1986-05-30 | 1987-12-07 | Yamaha Corp | Manufacture of semiconductor device |
JPS63168052A (en) * | 1986-12-29 | 1988-07-12 | Nec Corp | Thin film transistor and manufacture thereof |
JPH0778782A (en) * | 1993-06-18 | 1995-03-20 | Semiconductor Energy Lab Co Ltd | Semiconductor device and manufacture thereof |
JPH07161663A (en) * | 1993-12-03 | 1995-06-23 | Nec Corp | Manufacture of semiconductor device |
US5593923A (en) * | 1994-12-06 | 1997-01-14 | Nec Corporation | Method of fabricating semiconductor device having refractory metal silicide layer on impurity region using damage implant and single step anneal |
US5962897A (en) * | 1992-06-18 | 1999-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
US6624477B1 (en) | 1992-10-09 | 2003-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5235983A (en) * | 1975-09-17 | 1977-03-18 | Hitachi Ltd | Manufacturing method of field effective transistor |
JPS5444482A (en) * | 1977-09-14 | 1979-04-07 | Matsushita Electric Ind Co Ltd | Mos type semiconductor device and its manufacture |
JPS55125649A (en) * | 1979-03-22 | 1980-09-27 | Nec Corp | Production of semiconductor integrated circuit |
-
1980
- 1980-12-12 JP JP17465380A patent/JPS5799775A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5235983A (en) * | 1975-09-17 | 1977-03-18 | Hitachi Ltd | Manufacturing method of field effective transistor |
JPS5444482A (en) * | 1977-09-14 | 1979-04-07 | Matsushita Electric Ind Co Ltd | Mos type semiconductor device and its manufacture |
JPS55125649A (en) * | 1979-03-22 | 1980-09-27 | Nec Corp | Production of semiconductor integrated circuit |
Cited By (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59205759A (en) * | 1983-04-01 | 1984-11-21 | Hitachi Ltd | Mis type field-effect transistor |
JPS6037777A (en) * | 1983-08-10 | 1985-02-27 | Seiko Epson Corp | Semiconductor device |
JPS6037776A (en) * | 1983-08-10 | 1985-02-27 | Seiko Epson Corp | Manufacture of semiconductor device |
JPS60149166A (en) * | 1983-08-12 | 1985-08-06 | テクトロニツクス・インコーポレイテツド | Method of producing integrated circuit |
JPH0620078B2 (en) * | 1984-06-25 | 1994-03-16 | テキサス インスツルメンツ インコ−ポレイテツド | Transistor device manufacturing method and semiconductor device manufacturing method |
JPS6181667A (en) * | 1984-06-25 | 1986-04-25 | テキサス インスツルメンツ インコ−ポレイテツド | Transistor device and making thereof |
JPS6193670A (en) * | 1984-08-07 | 1986-05-12 | テキサス インスツルメンツ インコ−ポレイテツド | Making of mos-vlsi semiconductor device having metal gate and covered source/ drain |
JPS6156460A (en) * | 1984-08-28 | 1986-03-22 | Nec Corp | Semiconductor device and manufacture thereof |
JPS61129873A (en) * | 1984-11-28 | 1986-06-17 | Seiko Epson Corp | Equipment for manufacturing semiconductor |
JPS62502301A (en) * | 1985-03-07 | 1987-09-03 | ステイフテルセン インステイツテツト フオ−ル ミクロバ−グステクニツク ビツド テクニスカ ホ−グスコラン アイ ストツクホルム | Integrated circuit manufacturing method |
JPS61265868A (en) * | 1985-05-21 | 1986-11-25 | Hitachi Ltd | Manufacture of semiconductor device |
JPS624371A (en) * | 1985-06-28 | 1987-01-10 | ノ−ザン・テレコム・リミテツド | Manufacture of vlsi circuit using heat resistant metal silicide |
JPS6266679A (en) * | 1985-09-19 | 1987-03-26 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS6294937A (en) * | 1985-10-21 | 1987-05-01 | Nec Corp | Manufacture of semiconductor integrated circuit device |
JPS62281472A (en) * | 1986-05-30 | 1987-12-07 | Yamaha Corp | Manufacture of semiconductor device |
JPS63168052A (en) * | 1986-12-29 | 1988-07-12 | Nec Corp | Thin film transistor and manufacture thereof |
US5962897A (en) * | 1992-06-18 | 1999-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
US6455875B2 (en) | 1992-10-09 | 2002-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor having enhanced field mobility |
US6624477B1 (en) | 1992-10-09 | 2003-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US6790749B2 (en) | 1992-10-09 | 2004-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
US7109108B2 (en) | 1992-10-09 | 2006-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device having metal silicide |
US7602020B2 (en) | 1992-10-09 | 2009-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
US7723788B2 (en) | 1992-10-09 | 2010-05-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
US8017506B2 (en) | 1992-10-09 | 2011-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
JPH0778782A (en) * | 1993-06-18 | 1995-03-20 | Semiconductor Energy Lab Co Ltd | Semiconductor device and manufacture thereof |
JPH07161663A (en) * | 1993-12-03 | 1995-06-23 | Nec Corp | Manufacture of semiconductor device |
US5565383A (en) * | 1993-12-03 | 1996-10-15 | Nec Corporation | Method for selective formation of silicide films without formation on vertical gate sidewalls using collimated sputtering |
US5593923A (en) * | 1994-12-06 | 1997-01-14 | Nec Corporation | Method of fabricating semiconductor device having refractory metal silicide layer on impurity region using damage implant and single step anneal |
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