JPS5792856A - Hybrid integrated circuit - Google Patents

Hybrid integrated circuit

Info

Publication number
JPS5792856A
JPS5792856A JP17066280A JP17066280A JPS5792856A JP S5792856 A JPS5792856 A JP S5792856A JP 17066280 A JP17066280 A JP 17066280A JP 17066280 A JP17066280 A JP 17066280A JP S5792856 A JPS5792856 A JP S5792856A
Authority
JP
Japan
Prior art keywords
electrode
soldered
transistor
heat
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17066280A
Other languages
Japanese (ja)
Inventor
Kazuo Kusunoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP17066280A priority Critical patent/JPS5792856A/en
Publication of JPS5792856A publication Critical patent/JPS5792856A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Microwave Amplifiers (AREA)

Abstract

PURPOSE:To protect thermal runaway, by making a rim-continuous, metalized electrode with mid-part being separated, at both ends in the longitudinal direction of a good heat-conductive insulator, transmitting generated heat of transistors on the electrode to diodes on the electrode, and lowering base voltage. CONSTITUTION:Metalized electrodes 22, 23, which continuously cover the top, bottom, and both sides, are made with mid part being separated on both ends of a good heat-conductive plate 21 like beryllia ceramics. A transistor 8 and a diode 9 are soldered on the electrodes 22 and 23 respectively. The plate 21 is soldered on the top of an insulating substrate 19. The bottom of an electrode 10 is soldered on a collector electrode 10. The bottom of the electrode 23 is soldered on an emitter electrode 11, and the wiring is performed as necessary. This constitution makes heat generation of the transistor transmitted efficiently to the diode through the beryllia ceramic plate. The base voltage is lowered quickly, and the transistor is prevented from heat runaway, thereby obtaining the desired circuit increased in its reliability.
JP17066280A 1980-12-01 1980-12-01 Hybrid integrated circuit Pending JPS5792856A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17066280A JPS5792856A (en) 1980-12-01 1980-12-01 Hybrid integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17066280A JPS5792856A (en) 1980-12-01 1980-12-01 Hybrid integrated circuit

Publications (1)

Publication Number Publication Date
JPS5792856A true JPS5792856A (en) 1982-06-09

Family

ID=15909039

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17066280A Pending JPS5792856A (en) 1980-12-01 1980-12-01 Hybrid integrated circuit

Country Status (1)

Country Link
JP (1) JPS5792856A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5149213A (en) * 1990-07-11 1992-09-22 Brother Kogyo Kabushiki Kaisha Noise reducing back stopper for an impact print head

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5149213A (en) * 1990-07-11 1992-09-22 Brother Kogyo Kabushiki Kaisha Noise reducing back stopper for an impact print head

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