JPS5783079A - Driving method of semiconductor laser - Google Patents

Driving method of semiconductor laser

Info

Publication number
JPS5783079A
JPS5783079A JP16004280A JP16004280A JPS5783079A JP S5783079 A JPS5783079 A JP S5783079A JP 16004280 A JP16004280 A JP 16004280A JP 16004280 A JP16004280 A JP 16004280A JP S5783079 A JPS5783079 A JP S5783079A
Authority
JP
Japan
Prior art keywords
laser
driving current
noise
output light
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16004280A
Other languages
Japanese (ja)
Other versions
JPS6318872B2 (en
Inventor
Yukio Kurata
Kaneki Matsui
Haruhisa Takiguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP16004280A priority Critical patent/JPS5783079A/en
Publication of JPS5783079A publication Critical patent/JPS5783079A/en
Publication of JPS6318872B2 publication Critical patent/JPS6318872B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06817—Noise reduction

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To drive a laser in a high SN ratio by a method wherein by a driving current of a semiconductor laser being superposed and a noise component of an output light being modulated and detected, a driving current value is controlled so that a mode distribution noise may take a minimum level. CONSTITUTION:An output light of a semiconductor laser is radiated on an optical system 7 and a sensor 2. A signal is applied on a BPF3 from the detector 2 in accordance with a variation of output intensity. After a driving current of the laser 1 is set at a working state, a very low AC signal of which the frequency is far from a frequency band necessary for the optical system 7 is superposed on the driving current, a noise component of the output light of the laser 1 is converted into an electrical signal by a photo sensor 2 and detected 4 through the BPF3, a modulated noise component is taken out, and phase sensitive detection 5 between it and modulating frequency is performed. By detecting at which side of a noise peak the established driving current appears, a feedback to a driving circuit 6 is performed. By this constitution a laser having single mode oscillation originally of low noise nature is operated at a high SN ratio without any increase in mode distribution noise due to mode transition.
JP16004280A 1980-11-12 1980-11-12 Driving method of semiconductor laser Granted JPS5783079A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16004280A JPS5783079A (en) 1980-11-12 1980-11-12 Driving method of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16004280A JPS5783079A (en) 1980-11-12 1980-11-12 Driving method of semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5783079A true JPS5783079A (en) 1982-05-24
JPS6318872B2 JPS6318872B2 (en) 1988-04-20

Family

ID=15706666

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16004280A Granted JPS5783079A (en) 1980-11-12 1980-11-12 Driving method of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5783079A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856377A (en) * 1981-09-29 1983-04-04 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS60229541A (en) * 1984-04-27 1985-11-14 Matsushita Electric Ind Co Ltd Optical transmitter
JPS61281669A (en) * 1985-05-31 1986-12-12 Konishiroku Photo Ind Co Ltd Radiant ray picture information processing method and unit
EP0313383A2 (en) * 1987-10-23 1989-04-26 Fujitsu Limited Apparatus and Method for Detecting Mode-Hopping in Semiconductor Lasers
JPH0357432A (en) * 1989-07-27 1991-03-12 Advance Co Ltd Semiconductor laser blood flow meter
EP0460696A2 (en) * 1990-06-07 1991-12-11 Hamamatsu Photonics K.K. Low noise pulsed light source utilizing laser diode and voltage detector device utilizing same low noise pulsed light source
FR2689696A1 (en) * 1991-02-12 1993-10-08 Us Energy Method and means for controlling the frequency and output power of a tunable laser diode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5474386A (en) * 1977-10-26 1979-06-14 Post Office Controller

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5474386A (en) * 1977-10-26 1979-06-14 Post Office Controller

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856377A (en) * 1981-09-29 1983-04-04 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS6359552B2 (en) * 1981-09-29 1988-11-21
JPS60229541A (en) * 1984-04-27 1985-11-14 Matsushita Electric Ind Co Ltd Optical transmitter
JPS61281669A (en) * 1985-05-31 1986-12-12 Konishiroku Photo Ind Co Ltd Radiant ray picture information processing method and unit
EP0313383A2 (en) * 1987-10-23 1989-04-26 Fujitsu Limited Apparatus and Method for Detecting Mode-Hopping in Semiconductor Lasers
US4989949A (en) * 1987-10-23 1991-02-05 Fujitsu Limited Arrangement for discriminating whether or not semiconductor laser is functional
JPH0357432A (en) * 1989-07-27 1991-03-12 Advance Co Ltd Semiconductor laser blood flow meter
JPH0556898B2 (en) * 1989-07-27 1993-08-20 Advance Kk
EP0460696A2 (en) * 1990-06-07 1991-12-11 Hamamatsu Photonics K.K. Low noise pulsed light source utilizing laser diode and voltage detector device utilizing same low noise pulsed light source
US5179565A (en) * 1990-06-07 1993-01-12 Hamamatsu Photonics, K.K. Low noise pulsed light source utilizing laser diode and voltage detector device utilizing same low noise pulsed light source
FR2689696A1 (en) * 1991-02-12 1993-10-08 Us Energy Method and means for controlling the frequency and output power of a tunable laser diode

Also Published As

Publication number Publication date
JPS6318872B2 (en) 1988-04-20

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