JPS5783058A - Charge accumulation type semiconductor device and manufacture thereof - Google Patents

Charge accumulation type semiconductor device and manufacture thereof

Info

Publication number
JPS5783058A
JPS5783058A JP55157893A JP15789380A JPS5783058A JP S5783058 A JPS5783058 A JP S5783058A JP 55157893 A JP55157893 A JP 55157893A JP 15789380 A JP15789380 A JP 15789380A JP S5783058 A JPS5783058 A JP S5783058A
Authority
JP
Japan
Prior art keywords
region
defectless
substrate
deep
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55157893A
Other languages
Japanese (ja)
Inventor
Katsuhiko Morimune
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55157893A priority Critical patent/JPS5783058A/en
Publication of JPS5783058A publication Critical patent/JPS5783058A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate

Abstract

PURPOSE:To reduce the noise due to flowing-in of unnecessary carrier in a solid image device and the like by a method wherein a defectless regions having different depth are provided on the substrate surface, on the inside of which a high density faulty region was formed, and a charge accumulation type element is formed in a deep defectless region. CONSTITUTION:A heat-treatment (600-900 deg.C) is performed on a P type substrate 11 in a non-oxidizing atmosphere, and after crystal defect generating nuclei containing oxygen are formed all over the above substrate, oxide films 12 and 12' are provided in such a manner that the films will be thinned off in the element region, and defectless regions 13 and 13' are formed on the surface by performing a heat-treatment at 900- 1,000 deg.C. The region 13' which is 20-40mum deep is surrounded by a P<+> isolation layer 16, and after an accumulation electrode 18, a gate electrode 19 and a transfer electrode 20 have been provided through the intermediary of an oxide film, the whole surface is covered by an oxide film 17, and an image pickup device is obtained by coating a shielding film 21 having an aperture on the above. Through these procedures, the carrier (electron) generated by the incidented beam of light on the circumference 23 of the shielding film 21 can be dissipated in the high density faulty region 15, and the noise generated due to unnecessary charge can also be reduced.
JP55157893A 1980-11-10 1980-11-10 Charge accumulation type semiconductor device and manufacture thereof Pending JPS5783058A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55157893A JPS5783058A (en) 1980-11-10 1980-11-10 Charge accumulation type semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55157893A JPS5783058A (en) 1980-11-10 1980-11-10 Charge accumulation type semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5783058A true JPS5783058A (en) 1982-05-24

Family

ID=15659714

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55157893A Pending JPS5783058A (en) 1980-11-10 1980-11-10 Charge accumulation type semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5783058A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62156858A (en) * 1985-12-28 1987-07-11 Matsushita Electronics Corp Solid-state image pickup device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62156858A (en) * 1985-12-28 1987-07-11 Matsushita Electronics Corp Solid-state image pickup device

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