JPS5779665A - Semiconductor controlled rectifier element - Google Patents

Semiconductor controlled rectifier element

Info

Publication number
JPS5779665A
JPS5779665A JP15546080A JP15546080A JPS5779665A JP S5779665 A JPS5779665 A JP S5779665A JP 15546080 A JP15546080 A JP 15546080A JP 15546080 A JP15546080 A JP 15546080A JP S5779665 A JPS5779665 A JP S5779665A
Authority
JP
Japan
Prior art keywords
layer
impurity concentration
high impurity
channel cutting
bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15546080A
Other languages
Japanese (ja)
Inventor
Keiji Kamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15546080A priority Critical patent/JPS5779665A/en
Publication of JPS5779665A publication Critical patent/JPS5779665A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To improve the variations of characteristics when a bias is applied for a long period at high temperature by providing a metal film connected electrically with a high impurity concentration layer on said high impurity concentration layer for channel cutting a planer type thyristor. CONSTITUTION:In a planer type thyristor having a pE layer 11, an nB layer 12, a pB layer 13, an nE layer 14, an insulating layer 15 and an n<+> layer 16 for channel cutting, the insulating film 15 on the high impurity concentration layer 16 for channel cutting is removed annularly, and on this removed part a metal film 17 is sticked and is subjected to patterning. Hereby, even if a leakage electric field is caused by an impression of a bias for a long period at high temperature, migration of electric charges can be arrested with reduced accumulated charges and deterioration of the characteristics can be prevented with improved reliability.
JP15546080A 1980-11-05 1980-11-05 Semiconductor controlled rectifier element Pending JPS5779665A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15546080A JPS5779665A (en) 1980-11-05 1980-11-05 Semiconductor controlled rectifier element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15546080A JPS5779665A (en) 1980-11-05 1980-11-05 Semiconductor controlled rectifier element

Publications (1)

Publication Number Publication Date
JPS5779665A true JPS5779665A (en) 1982-05-18

Family

ID=15606526

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15546080A Pending JPS5779665A (en) 1980-11-05 1980-11-05 Semiconductor controlled rectifier element

Country Status (1)

Country Link
JP (1) JPS5779665A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5122379A (en) * 1974-08-19 1976-02-23 Sony Corp

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5122379A (en) * 1974-08-19 1976-02-23 Sony Corp

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