JPS577925A - Manufacture of thin film integrated circuit - Google Patents

Manufacture of thin film integrated circuit

Info

Publication number
JPS577925A
JPS577925A JP8323980A JP8323980A JPS577925A JP S577925 A JPS577925 A JP S577925A JP 8323980 A JP8323980 A JP 8323980A JP 8323980 A JP8323980 A JP 8323980A JP S577925 A JPS577925 A JP S577925A
Authority
JP
Japan
Prior art keywords
thin film
mask
sio2
grown
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8323980A
Other languages
English (en)
Inventor
Masatoshi Kitagawa
Shinichiro Ishihara
Koshiro Mori
Seiichi Nagata
Tsuneo Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8323980A priority Critical patent/JPS577925A/ja
Publication of JPS577925A publication Critical patent/JPS577925A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02373Group 14 semiconducting materials
    • H01L21/02381Silicon, silicon germanium, germanium

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP8323980A 1980-06-18 1980-06-18 Manufacture of thin film integrated circuit Pending JPS577925A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8323980A JPS577925A (en) 1980-06-18 1980-06-18 Manufacture of thin film integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8323980A JPS577925A (en) 1980-06-18 1980-06-18 Manufacture of thin film integrated circuit

Publications (1)

Publication Number Publication Date
JPS577925A true JPS577925A (en) 1982-01-16

Family

ID=13796766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8323980A Pending JPS577925A (en) 1980-06-18 1980-06-18 Manufacture of thin film integrated circuit

Country Status (1)

Country Link
JP (1) JPS577925A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01212433A (ja) * 1988-02-20 1989-08-25 Fujitsu General Ltd 薄膜半導体装置の製造方法
JPH01212457A (ja) * 1988-02-20 1989-08-25 Fujitsu General Ltd 薄膜ハイブリットic装置及びその製造方法
JP2003173972A (ja) * 2001-12-04 2003-06-20 Fuji Xerox Co Ltd 窒化物半導体素子の製造方法及び該製造方法により得られたパターン体
WO2019129364A1 (en) * 2017-12-29 2019-07-04 Microsoft Technology Licensing, Llc Fabrication process using vapour deposition through a positioned shadow mask

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5382162A (en) * 1976-12-27 1978-07-20 Fujitsu Ltd Beam epitaxial growth method
JPS5552220A (en) * 1978-10-13 1980-04-16 Fujitsu Ltd Manufacturing of semiconductor intergrated circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5382162A (en) * 1976-12-27 1978-07-20 Fujitsu Ltd Beam epitaxial growth method
JPS5552220A (en) * 1978-10-13 1980-04-16 Fujitsu Ltd Manufacturing of semiconductor intergrated circuit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01212433A (ja) * 1988-02-20 1989-08-25 Fujitsu General Ltd 薄膜半導体装置の製造方法
JPH01212457A (ja) * 1988-02-20 1989-08-25 Fujitsu General Ltd 薄膜ハイブリットic装置及びその製造方法
JP2003173972A (ja) * 2001-12-04 2003-06-20 Fuji Xerox Co Ltd 窒化物半導体素子の製造方法及び該製造方法により得られたパターン体
WO2019129364A1 (en) * 2017-12-29 2019-07-04 Microsoft Technology Licensing, Llc Fabrication process using vapour deposition through a positioned shadow mask
CN111479947A (zh) * 2017-12-29 2020-07-31 微软技术许可有限责任公司 使用通过被定位的阴影掩模进行气相沉积的制造工艺
US11629430B2 (en) 2017-12-29 2023-04-18 Microsoft Technology Licensing, Llc Fabrication process using vapour deposition through a positioned shadow mask

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