JPS5778132A - Liquid phase epitaxial growing method - Google Patents
Liquid phase epitaxial growing methodInfo
- Publication number
- JPS5778132A JPS5778132A JP15425380A JP15425380A JPS5778132A JP S5778132 A JPS5778132 A JP S5778132A JP 15425380 A JP15425380 A JP 15425380A JP 15425380 A JP15425380 A JP 15425380A JP S5778132 A JPS5778132 A JP S5778132A
- Authority
- JP
- Japan
- Prior art keywords
- liquid
- density
- molten
- maintained
- gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To obtain a green LED of high performance by reducing the density of P in molten Ga-P contacted with a substrate at a growing step from a balanced density of solid phase deposition and increasing the density of N by the much. CONSTITUTION:Liquid temperature is heated to T7 in a balanced system of solid GaP and molten Ga-P liquid, the Ga-P liquid is maintained in unsaturated P state at the time t4, and NH3 is introduced thereto. The NH3 is reacted with Ga to produce GaN, and molten Ga-P liquid is dissolved in large quantity. After the system temperature is maintained at T7 for the prescribed time, cooling is started. Then, the N is doped in the grown epitaxial layer in high density. Or, the molten liquid atmosphere is reduced under pressed or is maintained in vacuum to evaporate the P to be feasibly evaporated, and the N is introduced instead. According to this configuration, the N can be added in high density with good controllability only in the light emitting region of the green LED of the GaP, thereby obtaining a green diode of high performance.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15425380A JPS5778132A (en) | 1980-10-31 | 1980-10-31 | Liquid phase epitaxial growing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15425380A JPS5778132A (en) | 1980-10-31 | 1980-10-31 | Liquid phase epitaxial growing method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5778132A true JPS5778132A (en) | 1982-05-15 |
Family
ID=15580169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15425380A Pending JPS5778132A (en) | 1980-10-31 | 1980-10-31 | Liquid phase epitaxial growing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5778132A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1439572A2 (en) * | 2003-01-20 | 2004-07-21 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing group III nitride substrate |
-
1980
- 1980-10-31 JP JP15425380A patent/JPS5778132A/en active Pending
Non-Patent Citations (2)
Title |
---|
JOURNAL OF THE ELECTROCHEMICAL SOCIETY=1972 * |
NATIONAL TECHNICAL REPORT=1979 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1439572A2 (en) * | 2003-01-20 | 2004-07-21 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing group III nitride substrate |
EP1439572A3 (en) * | 2003-01-20 | 2008-03-26 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing group III nitride substrate |
US7524691B2 (en) | 2003-01-20 | 2009-04-28 | Panasonic Corporation | Method of manufacturing group III nitride substrate |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6453411A (en) | Manufacture of semiconductor thin film | |
JPS5778132A (en) | Liquid phase epitaxial growing method | |
JPS5493378A (en) | Manufacture for semiconductor device | |
JPS6350851B2 (en) | ||
JPS5629382A (en) | Light emitting device of double hetero structure and manufacture thereof | |
JPS5624985A (en) | Manufacture of gallium phosphide green light emitting element | |
JPS5453974A (en) | Manufacture for gallium phosphide green light emitting element | |
DE3683521D1 (en) | THERMAL SETTING OF A CONNECTION SEMICONDUCTOR. | |
JPS561528A (en) | Manufacture of epitaxial wafer of 3-5 group compound semiconductor | |
JPS5453977A (en) | Manufacture for gallium phosphide green light emitting element | |
JPS6439719A (en) | Epitaxial growth | |
SU400931A1 (en) | METHOD OF MAKING DIODE Sources | |
JPS561529A (en) | Manufacture of epitaxial wafer of 3-5 group compound semiconductor | |
JPS5685879A (en) | Gap green light emitting diode | |
SU706994A1 (en) | METHOD OF OBTAINING EPITAXIAL STRUCTURES OF VARIABLE COMPOSITION | |
JPS5534482A (en) | Manufacturing method for semiconductor laser | |
JPS56114317A (en) | Manufacture of semiconductor heterojunction photoelectric device | |
JPS5768014A (en) | Manufacture of semiconductor single crystal film | |
JPS54154269A (en) | Liquid-phase growth method | |
JPS5728372A (en) | Manufacture of semiconductor light emitting device | |
JPS5756925A (en) | Liquid phase epitaxially growing method and device for gallium arsenide and /or aluminum gallium arsenide | |
JPS5768015A (en) | Manufacture of semiconductor device | |
JPS54133889A (en) | Manufacture of gallium-phosphide green luminous element | |
JPS5775420A (en) | Gallium phosphide epitaxial wafer and manufacture thereof | |
JPS5591818A (en) | Vapor phase growth of compound semiconductor |