JPS5776875A - Mos semiconductor device - Google Patents

Mos semiconductor device

Info

Publication number
JPS5776875A
JPS5776875A JP15253280A JP15253280A JPS5776875A JP S5776875 A JPS5776875 A JP S5776875A JP 15253280 A JP15253280 A JP 15253280A JP 15253280 A JP15253280 A JP 15253280A JP S5776875 A JPS5776875 A JP S5776875A
Authority
JP
Japan
Prior art keywords
wiring
region
oxide film
polycrystalline silicon
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15253280A
Other languages
Japanese (ja)
Inventor
Toshimoto Kodaira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP15253280A priority Critical patent/JPS5776875A/en
Publication of JPS5776875A publication Critical patent/JPS5776875A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To avoid generation of micro crack in a region where a wiring polycrystalline silicon and a metal wiring cross each other holding on insulating film in between by a method wherein an insulating film between the polycrystalline silicon and a substrate is identical with a gate insulating film of MOSFET. CONSTITUTION:A field oxide film 11 of a region where a wiring polycrystalline silicon and an aluminum wiring cross each other is removed and an oxide film 12 is formed when a gate oxide film of MOSFET is formed. Then after the polycrystalline silicon wiring 8 is formed and a source region and a drain region of MOSFET are formed, a layer insulating layer 14 and the aluminum wiring 9 are formed. With above method, as the crossing region is not formed on the field oxide film 11, difference in level is not produced in the crossing region even when the field oxide film 11 is etched in a forming process of the source and the drain region, so that generation of micro crack in the wiring can be avoided.
JP15253280A 1980-10-30 1980-10-30 Mos semiconductor device Pending JPS5776875A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15253280A JPS5776875A (en) 1980-10-30 1980-10-30 Mos semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15253280A JPS5776875A (en) 1980-10-30 1980-10-30 Mos semiconductor device

Publications (1)

Publication Number Publication Date
JPS5776875A true JPS5776875A (en) 1982-05-14

Family

ID=15542490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15253280A Pending JPS5776875A (en) 1980-10-30 1980-10-30 Mos semiconductor device

Country Status (1)

Country Link
JP (1) JPS5776875A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007029839A (en) * 2005-07-26 2007-02-08 Anest Iwata Corp Low exhaust spray coating chamber

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54889A (en) * 1977-06-06 1979-01-06 Hitachi Ltd Semiconductor integrated circuit device and its manufacture
JPS5485686A (en) * 1977-12-20 1979-07-07 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54889A (en) * 1977-06-06 1979-01-06 Hitachi Ltd Semiconductor integrated circuit device and its manufacture
JPS5485686A (en) * 1977-12-20 1979-07-07 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007029839A (en) * 2005-07-26 2007-02-08 Anest Iwata Corp Low exhaust spray coating chamber

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