JPS5773939A - Semiconductor gas phase reaction apparatus under reduced pressure - Google Patents

Semiconductor gas phase reaction apparatus under reduced pressure

Info

Publication number
JPS5773939A
JPS5773939A JP15014680A JP15014680A JPS5773939A JP S5773939 A JPS5773939 A JP S5773939A JP 15014680 A JP15014680 A JP 15014680A JP 15014680 A JP15014680 A JP 15014680A JP S5773939 A JPS5773939 A JP S5773939A
Authority
JP
Japan
Prior art keywords
gasket
flanges
reduced pressure
pipes
under reduced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15014680A
Other languages
Japanese (ja)
Inventor
Yoshiya Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15014680A priority Critical patent/JPS5773939A/en
Publication of JPS5773939A publication Critical patent/JPS5773939A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To make it possible to use corrosion resistance materials for the inserted gasket, and prevent leakage by arranging sealed surfaces with a space widened outwards and not perpendicular to the pipe axis on flanges at opposite ends of gas pipes of the hermetic connecting part. CONSTITUTION:Flanges 15 and 15' are installed at the hermetic connecting part of pipes 14 and 14' for supplying reaction gas or exhausting gas of a reduced pressure CVD apparatus. A gasket 16 is inserted between these flanges and they are connected with bolts and nuts. Sealed surfaces 15a and 15a' contacting the gasket 16 are inclined with respect to a perpendicular of the axis of the pipe, and the space between seal surfaces are gradually widened from the center to the outside. Inner edges 26 and 26' of the gasket 16 are pushed and transformed by connecting the flanges 15 and 15', to give air-tightness. As the gasket transforms only partly, hard corrosion resistant materials can be used for the gasket. Also flanges can be made with synthetic resin for example, and made connected to the pipes.
JP15014680A 1980-10-28 1980-10-28 Semiconductor gas phase reaction apparatus under reduced pressure Pending JPS5773939A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15014680A JPS5773939A (en) 1980-10-28 1980-10-28 Semiconductor gas phase reaction apparatus under reduced pressure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15014680A JPS5773939A (en) 1980-10-28 1980-10-28 Semiconductor gas phase reaction apparatus under reduced pressure

Publications (1)

Publication Number Publication Date
JPS5773939A true JPS5773939A (en) 1982-05-08

Family

ID=15490493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15014680A Pending JPS5773939A (en) 1980-10-28 1980-10-28 Semiconductor gas phase reaction apparatus under reduced pressure

Country Status (1)

Country Link
JP (1) JPS5773939A (en)

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