JPS5769777A - Manufacture of charge transfer device - Google Patents

Manufacture of charge transfer device

Info

Publication number
JPS5769777A
JPS5769777A JP14518980A JP14518980A JPS5769777A JP S5769777 A JPS5769777 A JP S5769777A JP 14518980 A JP14518980 A JP 14518980A JP 14518980 A JP14518980 A JP 14518980A JP S5769777 A JPS5769777 A JP S5769777A
Authority
JP
Japan
Prior art keywords
electrode
oxide film
transfer device
charge transfer
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14518980A
Other languages
Japanese (ja)
Inventor
Tetsuo Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14518980A priority Critical patent/JPS5769777A/en
Publication of JPS5769777A publication Critical patent/JPS5769777A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To enhance sensitivity of a charge transfer device by a method wherein a floating impurity layer of the charge transfer device is formed self-alignmently in relation to an output barrier electrode and a reset electrode by performing ion implantation and energy beam ennealing. CONSTITUTION:An n type buried channel region 32 is formed in a p type Si substrate 31, and after a p<-> type region 33 is formed, the first layer transfer electrode 36, a thermal oxide film 37, the second layer transfer electrode 38 and an output barrier electrode 39 are provided, and after the oxide film is etched making a field oxide film 42, the reset electrode 40, a gate electrode 41 as masks, ions are implanted making the output barrier electrode 39, the reset electrode 41, etc., as masks, and then by performing laser annealing, the floating impurity layer 45, etc., are formed self-alignmently. Accordingly MOS type electrostatic capacitance between the floating impurity layer and respective electrodes are reduced, sensitivity is enhanced and noise quantity is suppressed.
JP14518980A 1980-10-17 1980-10-17 Manufacture of charge transfer device Pending JPS5769777A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14518980A JPS5769777A (en) 1980-10-17 1980-10-17 Manufacture of charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14518980A JPS5769777A (en) 1980-10-17 1980-10-17 Manufacture of charge transfer device

Publications (1)

Publication Number Publication Date
JPS5769777A true JPS5769777A (en) 1982-04-28

Family

ID=15379476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14518980A Pending JPS5769777A (en) 1980-10-17 1980-10-17 Manufacture of charge transfer device

Country Status (1)

Country Link
JP (1) JPS5769777A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994870A (en) * 1982-11-22 1984-05-31 Nec Corp Charge transfer element
JPS6066856A (en) * 1983-09-22 1985-04-17 Matsushita Electronics Corp Manufacture of semiconductor element
JPS6118174A (en) * 1984-07-04 1986-01-27 Toshiba Corp Charge detecting circuit
JPS61131854U (en) * 1985-02-06 1986-08-18
JPS648669A (en) * 1987-06-30 1989-01-12 Mitsubishi Electric Corp Manufactur of charge coupled element
US4959701A (en) * 1989-05-01 1990-09-25 Westinghouse Electric Corp. Variable sensitivity floating gate photosensor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994870A (en) * 1982-11-22 1984-05-31 Nec Corp Charge transfer element
JPS6066856A (en) * 1983-09-22 1985-04-17 Matsushita Electronics Corp Manufacture of semiconductor element
JPS6118174A (en) * 1984-07-04 1986-01-27 Toshiba Corp Charge detecting circuit
JPS61131854U (en) * 1985-02-06 1986-08-18
JPS648669A (en) * 1987-06-30 1989-01-12 Mitsubishi Electric Corp Manufactur of charge coupled element
US4959701A (en) * 1989-05-01 1990-09-25 Westinghouse Electric Corp. Variable sensitivity floating gate photosensor

Similar Documents

Publication Publication Date Title
JPS5710266A (en) Mis field effect semiconductor device
JPS5769777A (en) Manufacture of charge transfer device
JPS5758363A (en) Manufacture of mos type semiconductor device
JPS5662333A (en) Mos type semiconductor memory device and production thereof
JPS5710267A (en) Semiconductor device
JPS5687359A (en) Manufacture of one transistor type memory cell
JPS57107067A (en) Manufacture of semiconductor device
JPS55134929A (en) Ion implantation
JPS5783059A (en) Manufacture of mos type semiconductor device
JPS56107552A (en) Manufacture of semiconductor device
JPS57188866A (en) Manufacture of semiconductor device
JPS57138178A (en) Field-defect semiconductor device
JPS55121680A (en) Manufacture of semiconductor device
JPS57202773A (en) Silicon integrated circuit device
JPS645066A (en) Manufacture of field effect transistor
JPS5753981A (en) Manufacture of semiconductor device
JPS648669A (en) Manufactur of charge coupled element
JPS5583265A (en) Semiconductor device and method of fabricating the same
JPS57202783A (en) Manufacture of insulated gate type field-effect transistor
JPS5769779A (en) Metal oxide film semiconductor intergrated circuit
JPS56147447A (en) Manufacture of mosic
JPS56104470A (en) Semiconductor device and manufacture thereof
JPS5617026A (en) Manufacture of semiconductor device
JPS57180173A (en) Mis transistor and manufacture thereof
JPS5472986A (en) Manufacture of field effect transistor of insulation gate type