JPS5767332A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5767332A
JPS5767332A JP14393180A JP14393180A JPS5767332A JP S5767332 A JPS5767332 A JP S5767332A JP 14393180 A JP14393180 A JP 14393180A JP 14393180 A JP14393180 A JP 14393180A JP S5767332 A JPS5767332 A JP S5767332A
Authority
JP
Japan
Prior art keywords
type
inverter
stand
becomes
mode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14393180A
Other languages
Japanese (ja)
Other versions
JPH025058B2 (en
Inventor
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14393180A priority Critical patent/JPS5767332A/en
Priority to US06/260,994 priority patent/US4460835A/en
Priority to DE8181103606T priority patent/DE3162416D1/en
Priority to EP81103606A priority patent/EP0039946B1/en
Priority to CA000377457A priority patent/CA1185665A/en
Publication of JPS5767332A publication Critical patent/JPS5767332A/en
Publication of JPH025058B2 publication Critical patent/JPH025058B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
    • H03K19/09443—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type using a combination of enhancement and depletion transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce power consumption and a power delay product, by switching a substrate bias voltage in accordance with the active mode and the stand-by move in a semiconductor integrated circuit to change the function of the switching transistor of an inverter circuit. CONSTITUTION:A transistor T1 is E type and constitutes an E/R inverter together with a load resistance R, and an I type or D type MOS TR T31 is connected between this inverter and a power source VDD. A chip enable signal CE is given to the gate of the TR T31, and the TR T31 is turned on in the active mode and is turned off in the stand-by mode to disconnect completely the power supply line and the E/R inverter. In the active mode, a self-bais voltage VBB is -2.5V, and the TR T31 becomes I or D type, and the high level of the signal CE is 5V to flow a current sufficiently, and 5V of the power source voltage is outputted to an output out; and in the stand-by mode, the voltage VBB becomes about -6V, and the TR T31 becomes E type.
JP14393180A 1980-05-13 1980-10-15 Semiconductor integrated circuit device Granted JPS5767332A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP14393180A JPS5767332A (en) 1980-10-15 1980-10-15 Semiconductor integrated circuit device
US06/260,994 US4460835A (en) 1980-05-13 1981-05-06 Semiconductor integrated circuit device with low power consumption in a standby mode using an on-chip substrate bias generator
DE8181103606T DE3162416D1 (en) 1980-05-13 1981-05-11 Semiconductor integrated circuit device
EP81103606A EP0039946B1 (en) 1980-05-13 1981-05-11 Semiconductor integrated circuit device
CA000377457A CA1185665A (en) 1980-05-13 1981-05-13 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14393180A JPS5767332A (en) 1980-10-15 1980-10-15 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS5767332A true JPS5767332A (en) 1982-04-23
JPH025058B2 JPH025058B2 (en) 1990-01-31

Family

ID=15350404

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14393180A Granted JPS5767332A (en) 1980-05-13 1980-10-15 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5767332A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4535259A (en) * 1982-06-18 1985-08-13 Seeq Technology, Inc. Sense amplifier for use with a semiconductor memory array
JP2008259182A (en) * 2007-03-09 2008-10-23 Matsushita Electric Ind Co Ltd Current control circuit used for voltage booster circuit

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50113164A (en) * 1974-02-13 1975-09-05
JPS50144373A (en) * 1974-05-09 1975-11-20
JPS5270741A (en) * 1975-12-09 1977-06-13 Mitsubishi Electric Corp Mos logical circuit
JPS53121563A (en) * 1977-03-31 1978-10-24 Seiko Instr & Electronics Ltd Driving circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50113164A (en) * 1974-02-13 1975-09-05
JPS50144373A (en) * 1974-05-09 1975-11-20
JPS5270741A (en) * 1975-12-09 1977-06-13 Mitsubishi Electric Corp Mos logical circuit
JPS53121563A (en) * 1977-03-31 1978-10-24 Seiko Instr & Electronics Ltd Driving circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4535259A (en) * 1982-06-18 1985-08-13 Seeq Technology, Inc. Sense amplifier for use with a semiconductor memory array
JP2008259182A (en) * 2007-03-09 2008-10-23 Matsushita Electric Ind Co Ltd Current control circuit used for voltage booster circuit

Also Published As

Publication number Publication date
JPH025058B2 (en) 1990-01-31

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