JPS5764936A - Annealing device - Google Patents
Annealing deviceInfo
- Publication number
- JPS5764936A JPS5764936A JP14047580A JP14047580A JPS5764936A JP S5764936 A JPS5764936 A JP S5764936A JP 14047580 A JP14047580 A JP 14047580A JP 14047580 A JP14047580 A JP 14047580A JP S5764936 A JPS5764936 A JP S5764936A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- discharge lamp
- vicinity
- back surface
- lamp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000137 annealing Methods 0.000 title abstract 2
- 238000011109 contamination Methods 0.000 abstract 1
- 230000004907 flux Effects 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- -1 phosphorus ions Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Organic Chemistry (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14047580A JPS5764936A (en) | 1980-10-09 | 1980-10-09 | Annealing device |
DE19813139711 DE3139711A1 (de) | 1980-10-09 | 1981-10-06 | Glueheinrichtung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14047580A JPS5764936A (en) | 1980-10-09 | 1980-10-09 | Annealing device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5764936A true JPS5764936A (en) | 1982-04-20 |
JPS6226571B2 JPS6226571B2 (ja) | 1987-06-09 |
Family
ID=15269461
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14047580A Granted JPS5764936A (en) | 1980-10-09 | 1980-10-09 | Annealing device |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS5764936A (ja) |
DE (1) | DE3139711A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59178722A (ja) * | 1983-03-18 | 1984-10-11 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | 半導体の熱処理炉 |
US4560420A (en) * | 1984-06-13 | 1985-12-24 | At&T Technologies, Inc. | Method for reducing temperature variations across a semiconductor wafer during heating |
JPH01319934A (ja) * | 1988-05-09 | 1989-12-26 | Siemens Ag | 電磁放射照射による半導体円板の急速熱処理方法 |
JP2003007632A (ja) * | 2001-06-21 | 2003-01-10 | Ushio Inc | 閃光放射装置および熱処理装置 |
US7883988B2 (en) | 2008-06-04 | 2011-02-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor substrate |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6346788B1 (en) * | 1997-02-05 | 2002-02-12 | Smc Kabushiki Kaisha | Actuator and apparatus for controlling the same |
DE19808246B4 (de) * | 1998-02-27 | 2004-05-13 | Daimlerchrysler Ag | Verfahren zur Herstellung eines mikroelektronischen Halbleiterbauelements mittels Ionenimplatation |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50133532A (ja) * | 1974-04-10 | 1975-10-22 | ||
JPS5334302U (ja) * | 1976-08-26 | 1978-03-25 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5217216B2 (ja) * | 1972-02-20 | 1977-05-13 |
-
1980
- 1980-10-09 JP JP14047580A patent/JPS5764936A/ja active Granted
-
1981
- 1981-10-06 DE DE19813139711 patent/DE3139711A1/de not_active Withdrawn
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50133532A (ja) * | 1974-04-10 | 1975-10-22 | ||
JPS5334302U (ja) * | 1976-08-26 | 1978-03-25 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59178722A (ja) * | 1983-03-18 | 1984-10-11 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | 半導体の熱処理炉 |
US4560420A (en) * | 1984-06-13 | 1985-12-24 | At&T Technologies, Inc. | Method for reducing temperature variations across a semiconductor wafer during heating |
JPH01319934A (ja) * | 1988-05-09 | 1989-12-26 | Siemens Ag | 電磁放射照射による半導体円板の急速熱処理方法 |
JP2003007632A (ja) * | 2001-06-21 | 2003-01-10 | Ushio Inc | 閃光放射装置および熱処理装置 |
US7883988B2 (en) | 2008-06-04 | 2011-02-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor substrate |
Also Published As
Publication number | Publication date |
---|---|
DE3139711A1 (de) | 1982-05-13 |
JPS6226571B2 (ja) | 1987-06-09 |
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