JPS5764936A - Annealing device - Google Patents

Annealing device

Info

Publication number
JPS5764936A
JPS5764936A JP14047580A JP14047580A JPS5764936A JP S5764936 A JPS5764936 A JP S5764936A JP 14047580 A JP14047580 A JP 14047580A JP 14047580 A JP14047580 A JP 14047580A JP S5764936 A JPS5764936 A JP S5764936A
Authority
JP
Japan
Prior art keywords
wafer
discharge lamp
vicinity
back surface
lamp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14047580A
Other languages
Japanese (ja)
Other versions
JPS6226571B2 (en
Inventor
Tatsumi Hiramoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Ushio Inc
Original Assignee
Ushio Denki KK
Ushio Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK, Ushio Inc filed Critical Ushio Denki KK
Priority to JP14047580A priority Critical patent/JPS5764936A/en
Priority to DE19813139711 priority patent/DE3139711A1/en
Publication of JPS5764936A publication Critical patent/JPS5764936A/en
Publication of JPS6226571B2 publication Critical patent/JPS6226571B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Metallurgy (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To enable to instantaneously anneal uniformly the overall surface of a wafer having a wide area by arranging a plurality of flash discharge lamps within a parallel plane approaching the wafer, disposing an uneven mirror in the vicinity of the back surface thereof and flashing it.
CONSTITUTION: A flash discharge lamp 3 having, for example, 10mm of outer diameter, 160mm of arc length is isolated by 10mm from a 5-inch wafer 5 placed on a supporting base 4, and is intimately disposed within the plane surface. An uneven mirror 6 formed with a concave surface similar in shape to a bulb is provided in the vicinity of the back surface of the lamp 3, thereby effectively utilizing the luminous flux. A wafer in which phosphorus ions are, for example, injected in 2×1015cm-2 can be annealed in the state that the wafer is preliminarily heated to approx. 400°C with 6,000 Joule of emitting light energy per one discharge lamp and 300μsec of pulse width. The emitting energy of the discharge lamp is set by considering the type, injection quantity and depth of a doping material. In this manner, the annealing treatment having no warpage at the wafer no contamination can be uniformly performed with a simple structure in a short time.
COPYRIGHT: (C)1982,JPO&Japio
JP14047580A 1980-10-09 1980-10-09 Annealing device Granted JPS5764936A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP14047580A JPS5764936A (en) 1980-10-09 1980-10-09 Annealing device
DE19813139711 DE3139711A1 (en) 1980-10-09 1981-10-06 Annealing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14047580A JPS5764936A (en) 1980-10-09 1980-10-09 Annealing device

Publications (2)

Publication Number Publication Date
JPS5764936A true JPS5764936A (en) 1982-04-20
JPS6226571B2 JPS6226571B2 (en) 1987-06-09

Family

ID=15269461

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14047580A Granted JPS5764936A (en) 1980-10-09 1980-10-09 Annealing device

Country Status (2)

Country Link
JP (1) JPS5764936A (en)
DE (1) DE3139711A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59178722A (en) * 1983-03-18 1984-10-11 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Heat treatment furnace of semiconductor
US4560420A (en) * 1984-06-13 1985-12-24 At&T Technologies, Inc. Method for reducing temperature variations across a semiconductor wafer during heating
JPH01319934A (en) * 1988-05-09 1989-12-26 Siemens Ag Method of quick heat treatment of semiconductor wafer using electromagnetic radiation application
JP2003007632A (en) * 2001-06-21 2003-01-10 Ushio Inc Flash radiation device and heat treatment device
US7883988B2 (en) 2008-06-04 2011-02-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor substrate

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1077352C (en) * 1997-02-05 2002-01-02 Smc株式会社 Actuator and apparatus for controlling same
DE19808246B4 (en) * 1998-02-27 2004-05-13 Daimlerchrysler Ag Method for producing a microelectronic semiconductor component by means of ion implantation

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50133532A (en) * 1974-04-10 1975-10-22
JPS5334302U (en) * 1976-08-26 1978-03-25

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5217216B2 (en) * 1972-02-20 1977-05-13

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50133532A (en) * 1974-04-10 1975-10-22
JPS5334302U (en) * 1976-08-26 1978-03-25

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59178722A (en) * 1983-03-18 1984-10-11 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Heat treatment furnace of semiconductor
US4560420A (en) * 1984-06-13 1985-12-24 At&T Technologies, Inc. Method for reducing temperature variations across a semiconductor wafer during heating
JPH01319934A (en) * 1988-05-09 1989-12-26 Siemens Ag Method of quick heat treatment of semiconductor wafer using electromagnetic radiation application
JP2003007632A (en) * 2001-06-21 2003-01-10 Ushio Inc Flash radiation device and heat treatment device
US7883988B2 (en) 2008-06-04 2011-02-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor substrate

Also Published As

Publication number Publication date
DE3139711A1 (en) 1982-05-13
JPS6226571B2 (en) 1987-06-09

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