JPS5762559A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5762559A JPS5762559A JP13747580A JP13747580A JPS5762559A JP S5762559 A JPS5762559 A JP S5762559A JP 13747580 A JP13747580 A JP 13747580A JP 13747580 A JP13747580 A JP 13747580A JP S5762559 A JPS5762559 A JP S5762559A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- element region
- imputity
- approx
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000001259 photo etching Methods 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To simultaneously form an element region and a leading electrode without increasing the photoetching steps by forming a recess on the semiconductor surface. covering a polycrystalline silicon film contacining imputity on the recess to diffuse the imputity in the semiconductor. CONSTITUTION:A silicon oxidized film 2 of approx. 3,000 thick is formed on the surface 1 of a p type silicon substrate, and a hole is opened by a photoetching method. Then, with the film 2 as a mask the substrate 1 is plasma etched to form a groove having a depth of approx. 0.7mum at the hole. Subsequently, arsenic and phosphorus are added to a polycrystalline silicon film 5, which is covered thereon, is heat treated at 950 deg.C in an N2 atmosphere, thereby forming an N type impurity region 6. EVentually, the film 5 is patterned to form an electrode. Since the element region and the electrode can be formed in self-aligning manner, the integration density can be improved, and is particulary adapted for the formation of an element region of a lateral type transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13747580A JPS5762559A (en) | 1980-10-01 | 1980-10-01 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13747580A JPS5762559A (en) | 1980-10-01 | 1980-10-01 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5762559A true JPS5762559A (en) | 1982-04-15 |
Family
ID=15199477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13747580A Pending JPS5762559A (en) | 1980-10-01 | 1980-10-01 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5762559A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57201070A (en) * | 1981-06-05 | 1982-12-09 | Seiko Epson Corp | Semiconductor device |
| JPH02283030A (en) * | 1989-04-25 | 1990-11-20 | Fuji Electric Co Ltd | Semiconductor device provided with bipolar transistor |
| JP2003018932A (en) * | 2001-07-06 | 2003-01-21 | Toyo Netsu Kogyo Kk | Cage for rearing animal |
-
1980
- 1980-10-01 JP JP13747580A patent/JPS5762559A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57201070A (en) * | 1981-06-05 | 1982-12-09 | Seiko Epson Corp | Semiconductor device |
| JPH02283030A (en) * | 1989-04-25 | 1990-11-20 | Fuji Electric Co Ltd | Semiconductor device provided with bipolar transistor |
| JP2003018932A (en) * | 2001-07-06 | 2003-01-21 | Toyo Netsu Kogyo Kk | Cage for rearing animal |
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