JPS5754363A - Photosensor array device - Google Patents
Photosensor array deviceInfo
- Publication number
- JPS5754363A JPS5754363A JP55129323A JP12932380A JPS5754363A JP S5754363 A JPS5754363 A JP S5754363A JP 55129323 A JP55129323 A JP 55129323A JP 12932380 A JP12932380 A JP 12932380A JP S5754363 A JPS5754363 A JP S5754363A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- nesa
- upper electrodes
- electrode
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000013307 optical fiber Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Electronic Switches (AREA)
Abstract
PURPOSE:To obtain the photosensor array device, on which the number of electrode wirings on the lower electrode is reduced, is obtained by a method wherein a pluraity of upper electrodes are arranged in longitudinal direction on a photoelectric converting film and the upper electrodes and mesa electrodes are arranged in a two- dimensional matrix structure. CONSTITUTION:The light-transmitting nesa electrodes 15 are formed by coating on the surface whereon the signal output terminal of an optical fiber bunch will be formed, the lower elecrrode 16 which is combindly used as a conductive lead is formed at one end of the nesa electrodes and connected to a vertical scanning circuit 13. An SiO2 film is formed on the lower electrode 16 and a through hole 17a is formed at the section corresponding to the nesa electrodes 15. Also, a photoelectric converting film 11 is formed by evaporation on the SiO2 film and the upper electrodes 18 are formed by coating along the direction of arrangement of each through hole section on each nesa electrode. Then, a read-out is conducted by performing a time-division driving on the upper electrodes using a horizontal scanning circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55129323A JPS5754363A (en) | 1980-09-19 | 1980-09-19 | Photosensor array device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55129323A JPS5754363A (en) | 1980-09-19 | 1980-09-19 | Photosensor array device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5754363A true JPS5754363A (en) | 1982-03-31 |
Family
ID=15006737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55129323A Pending JPS5754363A (en) | 1980-09-19 | 1980-09-19 | Photosensor array device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5754363A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5339095A (en) * | 1976-09-22 | 1978-04-10 | Hitachi Ltd | Photo detector |
| JPS5548976A (en) * | 1978-10-04 | 1980-04-08 | Hitachi Ltd | Photoelectric conversion element |
-
1980
- 1980-09-19 JP JP55129323A patent/JPS5754363A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5339095A (en) * | 1976-09-22 | 1978-04-10 | Hitachi Ltd | Photo detector |
| JPS5548976A (en) * | 1978-10-04 | 1980-04-08 | Hitachi Ltd | Photoelectric conversion element |
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