JPS575367A - Junction type field effect transistor - Google Patents
Junction type field effect transistorInfo
- Publication number
- JPS575367A JPS575367A JP8035680A JP8035680A JPS575367A JP S575367 A JPS575367 A JP S575367A JP 8035680 A JP8035680 A JP 8035680A JP 8035680 A JP8035680 A JP 8035680A JP S575367 A JPS575367 A JP S575367A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- source
- region
- drain
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To decrease the gate series resistance of a field effect transistor by leading vertically source, drain and gate electrodes with respect to the longitudinal direction of the upper gate region of stripe shape, thereby sufficiently increasing the interval between the electrodes. CONSTITUTION:An electrode leading window 8 is opened at the prescribed part of a striped upper gate region 1. Simultaneously, a source and a drain electrode leading windows 4 and 5 are opened at the respective prescribed parts. Since the upper gate region 1, the source region 2 and the drain region 3 are sufficiently long in the longitudinal direction as compared with the width of the stripe at this time, the windows 4, 5, 8 can be widely formed at the intervals among the electrodes. Thereafter, gate, source and drain electrodes 9, 6, 7 respectively are covered to the respective windows.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8035680A JPS575367A (en) | 1980-06-12 | 1980-06-12 | Junction type field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8035680A JPS575367A (en) | 1980-06-12 | 1980-06-12 | Junction type field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS575367A true JPS575367A (en) | 1982-01-12 |
JPS6228594B2 JPS6228594B2 (en) | 1987-06-22 |
Family
ID=13715964
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8035680A Granted JPS575367A (en) | 1980-06-12 | 1980-06-12 | Junction type field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS575367A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012043334A1 (en) * | 2010-10-01 | 2012-04-05 | シャープ株式会社 | Nitride semiconductor device |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6377794U (en) * | 1986-11-07 | 1988-05-23 | ||
JP2006261537A (en) * | 2005-03-18 | 2006-09-28 | Fuji Electric Holdings Co Ltd | Lateral semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5425678A (en) * | 1977-07-28 | 1979-02-26 | Nec Corp | Field effect transistor of ultra high frequency and high output |
-
1980
- 1980-06-12 JP JP8035680A patent/JPS575367A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5425678A (en) * | 1977-07-28 | 1979-02-26 | Nec Corp | Field effect transistor of ultra high frequency and high output |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012043334A1 (en) * | 2010-10-01 | 2012-04-05 | シャープ株式会社 | Nitride semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6228594B2 (en) | 1987-06-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3262032D1 (en) | Bipolar transistor controlled by field effect having an insulated gate electrode | |
IT1139449B (en) | TRANSISTOR OF THE TYPE WITH THE CONTROL ELECTRODE OR GATE ISOLATED | |
GB1150808A (en) | Improvements in and relating to sealing strips | |
SE7710301L (en) | FIELD POWER TRANSISTOR | |
JPS575367A (en) | Junction type field effect transistor | |
DE3169122D1 (en) | Process for the manufacture of field-effect transistors with selfaligned gate electrode, and transistors made by this process | |
DE3481796D1 (en) | FIELD EFFECT TRANSISTOR WITH INSULATED GATE ELECTRODE. | |
JPS5646556A (en) | Field effect transistor | |
JPS5322378A (en) | Production of field effect transistor s | |
JPS53143177A (en) | Production of field effect transistor | |
JPS5615079A (en) | Insulated gate field effect transistor couple | |
JPS5350684A (en) | Vertical junction type field effect transistor | |
JPS56126976A (en) | Field effect transistor | |
CH514938A (en) | Field effect transistor with at least two gate electrodes | |
JPS56126970A (en) | Mos field effect transistor and manufacture thereof | |
JPS5633876A (en) | Transistor | |
JPS6435529A (en) | Active matrix cell and its manufacture | |
JPS5257786A (en) | Field effect transistor | |
JPS53108383A (en) | Semiconductor deivce and its manufacture | |
JPS57193065A (en) | Insulated gate field effect transistor | |
JPS56133876A (en) | Manufacture of junction type field effect semiconductor device | |
JPS5388583A (en) | Non-volatile memory element | |
JPS5693368A (en) | Mis transistor device | |
JPS57121280A (en) | Field effect transistor | |
JPS5662372A (en) | Junction type field effect semiconductor device |