JPS5691473A - Semiconductor - Google Patents

Semiconductor

Info

Publication number
JPS5691473A
JPS5691473A JP16995079A JP16995079A JPS5691473A JP S5691473 A JPS5691473 A JP S5691473A JP 16995079 A JP16995079 A JP 16995079A JP 16995079 A JP16995079 A JP 16995079A JP S5691473 A JPS5691473 A JP S5691473A
Authority
JP
Japan
Prior art keywords
type
channel
drain
region
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16995079A
Other languages
Japanese (ja)
Inventor
Jun Tamaoki
Yuichi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16995079A priority Critical patent/JPS5691473A/en
Publication of JPS5691473A publication Critical patent/JPS5691473A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To improve, in an SOS type IGFET, characteristics so that the leakage current between a source and drain and excess saturation current may not be had by providing a parasitic channel cutting-off region. CONSTITUTION:An n<+> type source layer 3, an n<+> type drain layer 4 and a p type region 8 are formed on a saphire plate 1, and a gate 6G insulated by an insulating film 5 on a p type region 8. Drain current flows through the first n type channel 7 controlled by the gate 6G. Then, the second n type channel 10 is generated by the positive charge 9 contained in the plate 1. A p type high density impurity dope layer 13 is formed to cut off the channel 10.
JP16995079A 1979-12-25 1979-12-25 Semiconductor Pending JPS5691473A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16995079A JPS5691473A (en) 1979-12-25 1979-12-25 Semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16995079A JPS5691473A (en) 1979-12-25 1979-12-25 Semiconductor

Publications (1)

Publication Number Publication Date
JPS5691473A true JPS5691473A (en) 1981-07-24

Family

ID=15895867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16995079A Pending JPS5691473A (en) 1979-12-25 1979-12-25 Semiconductor

Country Status (1)

Country Link
JP (1) JPS5691473A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4797721A (en) * 1987-04-13 1989-01-10 General Electric Company Radiation hardened semiconductor device and method of making the same
US5144390A (en) * 1988-09-02 1992-09-01 Texas Instruments Incorporated Silicon-on insulator transistor with internal body node to source node connection
US5151759A (en) * 1989-03-02 1992-09-29 Thunderbird Technologies, Inc. Fermi threshold silicon-on-insulator field effect transistor
US5264721A (en) * 1989-04-29 1993-11-23 Fujitsu Limited Insulated-gate FET on an SOI-structure
US5316960A (en) * 1989-07-11 1994-05-31 Ricoh Company, Ltd. C-MOS thin film transistor device manufacturing method
US5367186A (en) * 1992-01-28 1994-11-22 Thunderbird Technologies, Inc. Bounded tub fermi threshold field effect transistor
US5369295A (en) * 1992-01-28 1994-11-29 Thunderbird Technologies, Inc. Fermi threshold field effect transistor with reduced gate and diffusion capacitance
US5440160A (en) * 1992-01-28 1995-08-08 Thunderbird Technologies, Inc. High saturation current, low leakage current fermi threshold field effect transistor
US5525822A (en) * 1991-01-28 1996-06-11 Thunderbird Technologies, Inc. Fermi threshold field effect transistor including doping gradient regions
US5543654A (en) * 1992-01-28 1996-08-06 Thunderbird Technologies, Inc. Contoured-tub fermi-threshold field effect transistor and method of forming same
US5786620A (en) * 1992-01-28 1998-07-28 Thunderbird Technologies, Inc. Fermi-threshold field effect transistors including source/drain pocket implants and methods of fabricating same
US5814869A (en) * 1992-01-28 1998-09-29 Thunderbird Technologies, Inc. Short channel fermi-threshold field effect transistors

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4797721A (en) * 1987-04-13 1989-01-10 General Electric Company Radiation hardened semiconductor device and method of making the same
US5144390A (en) * 1988-09-02 1992-09-01 Texas Instruments Incorporated Silicon-on insulator transistor with internal body node to source node connection
US5151759A (en) * 1989-03-02 1992-09-29 Thunderbird Technologies, Inc. Fermi threshold silicon-on-insulator field effect transistor
US5264721A (en) * 1989-04-29 1993-11-23 Fujitsu Limited Insulated-gate FET on an SOI-structure
US5316960A (en) * 1989-07-11 1994-05-31 Ricoh Company, Ltd. C-MOS thin film transistor device manufacturing method
US5525822A (en) * 1991-01-28 1996-06-11 Thunderbird Technologies, Inc. Fermi threshold field effect transistor including doping gradient regions
US5369295A (en) * 1992-01-28 1994-11-29 Thunderbird Technologies, Inc. Fermi threshold field effect transistor with reduced gate and diffusion capacitance
US5374836A (en) * 1992-01-28 1994-12-20 Thunderbird Technologies, Inc. High current fermi threshold field effect transistor
US5440160A (en) * 1992-01-28 1995-08-08 Thunderbird Technologies, Inc. High saturation current, low leakage current fermi threshold field effect transistor
US5367186A (en) * 1992-01-28 1994-11-22 Thunderbird Technologies, Inc. Bounded tub fermi threshold field effect transistor
US5543654A (en) * 1992-01-28 1996-08-06 Thunderbird Technologies, Inc. Contoured-tub fermi-threshold field effect transistor and method of forming same
US5786620A (en) * 1992-01-28 1998-07-28 Thunderbird Technologies, Inc. Fermi-threshold field effect transistors including source/drain pocket implants and methods of fabricating same
US5814869A (en) * 1992-01-28 1998-09-29 Thunderbird Technologies, Inc. Short channel fermi-threshold field effect transistors

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