JPS5752230A - Driving system of semiconductor - Google Patents

Driving system of semiconductor

Info

Publication number
JPS5752230A
JPS5752230A JP12592980A JP12592980A JPS5752230A JP S5752230 A JPS5752230 A JP S5752230A JP 12592980 A JP12592980 A JP 12592980A JP 12592980 A JP12592980 A JP 12592980A JP S5752230 A JPS5752230 A JP S5752230A
Authority
JP
Japan
Prior art keywords
fet3
voltage
switching
case
winding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12592980A
Other languages
Japanese (ja)
Inventor
Kenichi Onda
Takuji Matsumura
Kimihito Abe
Hisao Amano
Kazuchika Urita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12592980A priority Critical patent/JPS5752230A/en
Publication of JPS5752230A publication Critical patent/JPS5752230A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches

Landscapes

  • Electronic Switches (AREA)

Abstract

PURPOSE:To reduce a noise at the time of switching and a switching loss, by driving so as to reduce a time variation rate dV/dT of voltage between main electrodes in case of switching a semicondutor element, in a gate driving circuit consisting of a semiconductor element. CONSTITUTION:When a transistor TR55 of a gate circuit 5 consisting of an MOSFET3 is changed to off-state from on-state, voltage of opposite polarity is induced to the winding of a transformer 59 by energy accumulated in excitation inductance of the transformer 59, input capacity Ciss of the FET3 is charged through a diode 57, the FET3 is turned on, and supresses dV/dT between the main electodes of the FET3 in this case. When the FET3 is turned off, voltage is induced to winding n2 by turning on the TR55, and a current is flowed in the direction for charging the charged Ciss in reverse. A discharge time of the Ciss is controlled by a resistance 58 and output voltage of the winding n2, and dV/dT in case of turning off the FET3 is reduced. In this way, a noise caused by spike voltage in case of switching the FET3 is reduced, and the switching loss is also reduced.
JP12592980A 1980-09-12 1980-09-12 Driving system of semiconductor Pending JPS5752230A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12592980A JPS5752230A (en) 1980-09-12 1980-09-12 Driving system of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12592980A JPS5752230A (en) 1980-09-12 1980-09-12 Driving system of semiconductor

Publications (1)

Publication Number Publication Date
JPS5752230A true JPS5752230A (en) 1982-03-27

Family

ID=14922443

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12592980A Pending JPS5752230A (en) 1980-09-12 1980-09-12 Driving system of semiconductor

Country Status (1)

Country Link
JP (1) JPS5752230A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS596624A (en) * 1982-07-02 1984-01-13 Hitachi Ltd Circuit for driving gate of mosfet
JPS6119352A (en) * 1984-06-30 1986-01-28 アクゾ・エヌ・ヴエー Flexible multilayer laminate and manufacture thereof
JPS62117212A (en) * 1985-11-15 1987-05-28 日立電線株式会社 Radiation-resistant wire and cable
JPS62181122A (en) * 1986-02-06 1987-08-08 Ube Ind Ltd Preparation of polyimide sheet molding
JPH03180343A (en) * 1989-12-08 1991-08-06 Ube Ind Ltd Multilayer extruded polyimide film and manufacture thereof
JPH0433848A (en) * 1990-05-30 1992-02-05 Ube Ind Ltd Manufacture of metallic foil laminated film
JPH0433847A (en) * 1990-05-30 1992-02-05 Ube Ind Ltd Metallic foil laminated film and manufacture thereof
WO2017073215A1 (en) * 2015-10-27 2017-05-04 ローム株式会社 Switch drive circuit, switch circuit, and power supply device
JP2020014032A (en) * 2018-07-13 2020-01-23 株式会社明電舎 Gate drive circuit and pulse power supply of semiconductor switching element

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS596624A (en) * 1982-07-02 1984-01-13 Hitachi Ltd Circuit for driving gate of mosfet
JPS6119352A (en) * 1984-06-30 1986-01-28 アクゾ・エヌ・ヴエー Flexible multilayer laminate and manufacture thereof
JPH0525670B2 (en) * 1984-06-30 1993-04-13 Akzo Nv
JPS62117212A (en) * 1985-11-15 1987-05-28 日立電線株式会社 Radiation-resistant wire and cable
JPS62181122A (en) * 1986-02-06 1987-08-08 Ube Ind Ltd Preparation of polyimide sheet molding
JPH03180343A (en) * 1989-12-08 1991-08-06 Ube Ind Ltd Multilayer extruded polyimide film and manufacture thereof
JPH0433848A (en) * 1990-05-30 1992-02-05 Ube Ind Ltd Manufacture of metallic foil laminated film
JPH0433847A (en) * 1990-05-30 1992-02-05 Ube Ind Ltd Metallic foil laminated film and manufacture thereof
WO2017073215A1 (en) * 2015-10-27 2017-05-04 ローム株式会社 Switch drive circuit, switch circuit, and power supply device
JP2017085318A (en) * 2015-10-27 2017-05-18 ローム株式会社 Switch drive circuit, switch circuit, and power supply device
US10826486B2 (en) 2015-10-27 2020-11-03 Rohm Co., Ltd. Switching driving circuit, switching circuit, and power supply device
JP2020014032A (en) * 2018-07-13 2020-01-23 株式会社明電舎 Gate drive circuit and pulse power supply of semiconductor switching element

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