JPS5749264A - Photoelectric transducer - Google Patents

Photoelectric transducer

Info

Publication number
JPS5749264A
JPS5749264A JP55124065A JP12406580A JPS5749264A JP S5749264 A JPS5749264 A JP S5749264A JP 55124065 A JP55124065 A JP 55124065A JP 12406580 A JP12406580 A JP 12406580A JP S5749264 A JPS5749264 A JP S5749264A
Authority
JP
Japan
Prior art keywords
film
cds
cdte
films
overlap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55124065A
Other languages
Japanese (ja)
Inventor
Nobuo Nakayama
Toshiharu Sasaki
Noboru Kataobe
Yasuo Yamataka
Katsufumi Komori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP55124065A priority Critical patent/JPS5749264A/en
Publication of JPS5749264A publication Critical patent/JPS5749264A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To obtain a compact and high-performance photoelectric transducer, by providing on the same substrate a photodiode formed from a CdS polycrystalline film and a CdTe polycrystalline film and a diode formed from a CdS polycrystalline film and a Te polycrystalline film. CONSTITUTION:On a glass substrate 1, CdS films 2-4 are provided at given intervals by means of evaporation, and a CdTe film 5 is formed so as to overlap with a part thereof. Moreover, a Te film 6 is formed so as to overlap with a part of each of the films 5 and 3, and a Te film 7 is formed so as to overlap with a part of the film 4. Evaporated films 8-10 of In-Sn alloy are formed on the exposed parts of the films 2-4 and 7. The Te 6 becomes an electrode and acceptor with respect to the CdTe 5, forming a photodiode between the CdS 2 and the CdTe 5. In addition, the Te 6, 7 form diodes with the CdS 3, 4 as well as connect the photodiodes to each other. By said constitution, it is possible to obtain the photoelectric transducer which is highly sensitive in a wavelength range, 520-850nm, and also has high frequency responce characteristics, and an original can be read at a high speed without any lens by employing red LEDs.
JP55124065A 1980-09-09 1980-09-09 Photoelectric transducer Pending JPS5749264A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55124065A JPS5749264A (en) 1980-09-09 1980-09-09 Photoelectric transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55124065A JPS5749264A (en) 1980-09-09 1980-09-09 Photoelectric transducer

Publications (1)

Publication Number Publication Date
JPS5749264A true JPS5749264A (en) 1982-03-23

Family

ID=14876080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55124065A Pending JPS5749264A (en) 1980-09-09 1980-09-09 Photoelectric transducer

Country Status (1)

Country Link
JP (1) JPS5749264A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5766662A (en) * 1980-10-13 1982-04-22 Ricoh Co Ltd Image sensor
JPS62265775A (en) * 1986-05-13 1987-11-18 Oki Electric Ind Co Ltd Photodetector

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS575372A (en) * 1980-06-11 1982-01-12 Ricoh Co Ltd Thin film diode and manufacture thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS575372A (en) * 1980-06-11 1982-01-12 Ricoh Co Ltd Thin film diode and manufacture thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5766662A (en) * 1980-10-13 1982-04-22 Ricoh Co Ltd Image sensor
JPS62265775A (en) * 1986-05-13 1987-11-18 Oki Electric Ind Co Ltd Photodetector

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