JPS5748275A - Radiation sensitive semiconductor device - Google Patents
Radiation sensitive semiconductor deviceInfo
- Publication number
- JPS5748275A JPS5748275A JP56105175A JP10517581A JPS5748275A JP S5748275 A JPS5748275 A JP S5748275A JP 56105175 A JP56105175 A JP 56105175A JP 10517581 A JP10517581 A JP 10517581A JP S5748275 A JPS5748275 A JP S5748275A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- radiation sensitive
- sensitive semiconductor
- radiation
- sensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14654—Blooming suppression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8003906A NL8003906A (nl) | 1980-07-07 | 1980-07-07 | Stralingsgevoelige halfgeleiderinrichting. |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5748275A true JPS5748275A (en) | 1982-03-19 |
JPS622710B2 JPS622710B2 (ja) | 1987-01-21 |
Family
ID=19835577
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56105175A Granted JPS5748275A (en) | 1980-07-07 | 1981-07-07 | Radiation sensitive semiconductor device |
Country Status (11)
Country | Link |
---|---|
US (1) | US4791468A (ja) |
JP (1) | JPS5748275A (ja) |
AT (1) | AT387106B (ja) |
AU (1) | AU546782B2 (ja) |
CA (1) | CA1189175A (ja) |
DE (1) | DE3124238A1 (ja) |
ES (1) | ES8302364A1 (ja) |
FR (1) | FR2486309B1 (ja) |
GB (1) | GB2080026B (ja) |
IT (1) | IT1137597B (ja) |
NL (1) | NL8003906A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60154579A (ja) * | 1983-12-20 | 1985-08-14 | エヌ・ベー・フイリツプス・フルーイランペンフアブリケン | 半導体装置 |
JPS6388870A (ja) * | 1986-10-01 | 1988-04-19 | Sony Corp | 受光装置 |
JPH01150371A (ja) * | 1987-12-07 | 1989-06-13 | Matsushita Electric Ind Co Ltd | 受光素子 |
JPH01248676A (ja) * | 1988-03-30 | 1989-10-04 | Matsushita Electron Corp | 光半導体装置 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2128019B (en) * | 1982-09-23 | 1986-10-08 | Secr Defence | Infrared radiation detection device |
DE3465830D1 (en) * | 1983-07-06 | 1987-10-08 | Agfa Gevaert Nv | Radiation-sensitive semiconductor device |
US4680471A (en) * | 1985-03-20 | 1987-07-14 | Motorola, Inc. | Integrated circuit packaging |
NL8501501A (nl) * | 1985-05-24 | 1986-12-16 | Tno | Foto-elektrische omzetter. |
NL8501489A (nl) * | 1985-05-24 | 1986-12-16 | Philips Nv | Positie-gevoelige stralingsdetector. |
NL8601719A (nl) * | 1986-07-02 | 1988-02-01 | Philips Nv | Electronisch instelbare positiegevoelige stralingsdetector, focusfoutdetectiestelsel voorzien van een dergelijke stralingsdetector, en optische lees- en/of schrijfinrichting voorzien van een dergelijk focusfoutdetectiestelsel. |
DE3728691A1 (de) * | 1986-08-28 | 1988-03-10 | Nissan Motor | Lichtempfindlicher positionssensor |
NL8700370A (nl) * | 1987-02-16 | 1988-09-16 | Philips Nv | Stralingsgevoelige halfgeleiderinrichting. |
NL8901629A (nl) * | 1989-06-28 | 1991-01-16 | Philips Nv | Stralingsgevoelige halfgeleiderinrichting en uitlees- of schrijfeenheid bevattende een dergelijke stralingsgevoelige halfgeleiderinrichting. |
DE3929845A1 (de) * | 1989-09-08 | 1991-03-21 | Messerschmitt Boelkow Blohm | Einrichtung zur wellenlaengenbestimmung optischer strahlung |
AT393009B (de) * | 1989-11-07 | 1991-07-25 | Poska Albertas Ionas Antanovic | Selbsttaetiges ventil |
DE4326754A1 (de) * | 1993-08-11 | 1995-02-16 | Daimler Benz Ag | Halbleiter-Photodetektor |
DE4413481C2 (de) * | 1994-04-19 | 1999-12-16 | Vishay Semiconductor Gmbh | Optoelektronisches Bauelement |
TWI257181B (en) * | 2003-07-28 | 2006-06-21 | Rohm Co Ltd | Semiconductor module |
US7388187B1 (en) * | 2007-03-06 | 2008-06-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cross-talk reduction through deep pixel well implant for image sensors |
CN102723349B (zh) * | 2012-06-26 | 2015-01-21 | 中国科学院上海高等研究院 | 带有隔离层的cmos图像传感器及其制作方法 |
RU204784U1 (ru) * | 2020-12-23 | 2021-06-10 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный университет имени М.В.Ломоносова" (МГУ) | Универсальный полупроводниковый спектрометр для детектирования корпускулярных космических излучений |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3593067A (en) * | 1967-08-07 | 1971-07-13 | Honeywell Inc | Semiconductor radiation sensor |
JPS5427384A (en) * | 1977-08-02 | 1979-03-01 | Kazuo Fushimi | Semiconductor detector |
JPS5594068U (ja) * | 1978-12-21 | 1980-06-30 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3486029A (en) * | 1965-12-29 | 1969-12-23 | Gen Electric | Radiative interconnection arrangement |
NL6714455A (ja) * | 1967-10-25 | 1969-04-29 | ||
US3548233A (en) * | 1968-11-29 | 1970-12-15 | Rca Corp | Charge storage device with pn junction diode array target having semiconductor contact pads |
CA879979A (en) * | 1969-09-26 | 1971-08-31 | J. Mcintyre Robert | Quadrant photodiode |
US3601668A (en) * | 1969-11-07 | 1971-08-24 | Fairchild Camera Instr Co | Surface depletion layer photodevice |
US3916429A (en) * | 1971-12-20 | 1975-10-28 | Philips Corp | Gated silicon diode array camera tube |
JPS5213918B2 (ja) * | 1972-02-02 | 1977-04-18 | ||
JPS5641186B2 (ja) * | 1972-03-03 | 1981-09-26 | ||
US3949223A (en) * | 1973-11-01 | 1976-04-06 | Honeywell Inc. | Monolithic photoconductive detector array |
US4025943A (en) * | 1976-03-22 | 1977-05-24 | Canadian Patents And Development Limited | Photogeneration channel in front illuminated solid state silicon imaging devices |
US4067104A (en) * | 1977-02-24 | 1978-01-10 | Rockwell International Corporation | Method of fabricating an array of flexible metallic interconnects for coupling microelectronics components |
US4167748A (en) * | 1978-07-03 | 1979-09-11 | Bell Telephone Laboratories, Incorporated | High voltage monolithic transistor circuit |
US4231820A (en) * | 1979-02-21 | 1980-11-04 | Rca Corporation | Method of making a silicon diode array target |
DE2922250A1 (de) * | 1979-05-31 | 1980-12-11 | Siemens Ag | Lichtsteuerbarer transistor |
US4292645A (en) * | 1979-10-18 | 1981-09-29 | Picker Corporation | Charge splitting resistive layer for a semiconductor gamma camera |
US4329702A (en) * | 1980-04-23 | 1982-05-11 | Rca Corporation | Low cost reduced blooming device and method for making the same |
US4376285A (en) * | 1980-06-23 | 1983-03-08 | Massachusetts Institute Of Technology | High speed optoelectronic switch |
US4369458A (en) * | 1980-07-01 | 1983-01-18 | Westinghouse Electric Corp. | Self-aligned, flip-chip focal plane array configuration |
-
1980
- 1980-07-07 NL NL8003906A patent/NL8003906A/nl not_active Application Discontinuation
-
1981
- 1981-06-20 DE DE19813124238 patent/DE3124238A1/de active Granted
- 1981-07-02 CA CA000380968A patent/CA1189175A/en not_active Expired
- 1981-07-03 ES ES503658A patent/ES8302364A1/es not_active Expired
- 1981-07-03 GB GB8120653A patent/GB2080026B/en not_active Expired
- 1981-07-03 IT IT22750/81A patent/IT1137597B/it active
- 1981-07-03 AU AU72556/81A patent/AU546782B2/en not_active Ceased
- 1981-07-06 FR FR8113236A patent/FR2486309B1/fr not_active Expired
- 1981-07-07 JP JP56105175A patent/JPS5748275A/ja active Granted
- 1981-07-07 AT AT0301081A patent/AT387106B/de not_active IP Right Cessation
-
1988
- 1988-02-02 US US07/153,523 patent/US4791468A/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3593067A (en) * | 1967-08-07 | 1971-07-13 | Honeywell Inc | Semiconductor radiation sensor |
JPS5427384A (en) * | 1977-08-02 | 1979-03-01 | Kazuo Fushimi | Semiconductor detector |
JPS5594068U (ja) * | 1978-12-21 | 1980-06-30 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60154579A (ja) * | 1983-12-20 | 1985-08-14 | エヌ・ベー・フイリツプス・フルーイランペンフアブリケン | 半導体装置 |
JPS6388870A (ja) * | 1986-10-01 | 1988-04-19 | Sony Corp | 受光装置 |
JPH01150371A (ja) * | 1987-12-07 | 1989-06-13 | Matsushita Electric Ind Co Ltd | 受光素子 |
JPH01248676A (ja) * | 1988-03-30 | 1989-10-04 | Matsushita Electron Corp | 光半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
DE3124238C2 (ja) | 1991-01-31 |
GB2080026B (en) | 1984-05-02 |
US4791468A (en) | 1988-12-13 |
NL8003906A (nl) | 1982-02-01 |
AU7255681A (en) | 1982-01-14 |
FR2486309A1 (fr) | 1982-01-08 |
CA1189175A (en) | 1985-06-18 |
ES503658A0 (es) | 1982-12-16 |
GB2080026A (en) | 1982-01-27 |
JPS622710B2 (ja) | 1987-01-21 |
IT1137597B (it) | 1986-09-10 |
ATA301081A (de) | 1988-04-15 |
AT387106B (de) | 1988-12-12 |
DE3124238A1 (de) | 1982-06-16 |
ES8302364A1 (es) | 1982-12-16 |
FR2486309B1 (fr) | 1986-01-03 |
AU546782B2 (en) | 1985-09-19 |
IT8122750A0 (it) | 1981-07-03 |
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