JPS5747874A - Detection of end point of dry etching reaction - Google Patents
Detection of end point of dry etching reactionInfo
- Publication number
- JPS5747874A JPS5747874A JP12156680A JP12156680A JPS5747874A JP S5747874 A JPS5747874 A JP S5747874A JP 12156680 A JP12156680 A JP 12156680A JP 12156680 A JP12156680 A JP 12156680A JP S5747874 A JPS5747874 A JP S5747874A
- Authority
- JP
- Japan
- Prior art keywords
- end point
- reaction
- plasma
- detected
- wavelength region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12156680A JPS5747874A (en) | 1980-09-02 | 1980-09-02 | Detection of end point of dry etching reaction |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12156680A JPS5747874A (en) | 1980-09-02 | 1980-09-02 | Detection of end point of dry etching reaction |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5747874A true JPS5747874A (en) | 1982-03-18 |
JPS5752421B2 JPS5752421B2 (ja) | 1982-11-08 |
Family
ID=14814399
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12156680A Granted JPS5747874A (en) | 1980-09-02 | 1980-09-02 | Detection of end point of dry etching reaction |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5747874A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57148349A (en) * | 1981-03-11 | 1982-09-13 | Hitachi Ltd | Monitoring method for dry etching of silicon oxide |
JPS5945946A (ja) * | 1982-09-06 | 1984-03-15 | Toyota Central Res & Dev Lab Inc | 中空糸状多孔質ガラスの製造法 |
US4482424A (en) * | 1983-05-06 | 1984-11-13 | At&T Bell Laboratories | Method for monitoring etching of resists by monitoring the flouresence of the unetched material |
JPS63107026A (ja) * | 1986-10-23 | 1988-05-12 | Tokuda Seisakusho Ltd | プラズマエツチング装置 |
-
1980
- 1980-09-02 JP JP12156680A patent/JPS5747874A/ja active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57148349A (en) * | 1981-03-11 | 1982-09-13 | Hitachi Ltd | Monitoring method for dry etching of silicon oxide |
JPS5945946A (ja) * | 1982-09-06 | 1984-03-15 | Toyota Central Res & Dev Lab Inc | 中空糸状多孔質ガラスの製造法 |
JPS6257588B2 (ja) * | 1982-09-06 | 1987-12-01 | Toyoda Chuo Kenkyusho Kk | |
US4482424A (en) * | 1983-05-06 | 1984-11-13 | At&T Bell Laboratories | Method for monitoring etching of resists by monitoring the flouresence of the unetched material |
JPS63107026A (ja) * | 1986-10-23 | 1988-05-12 | Tokuda Seisakusho Ltd | プラズマエツチング装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS5752421B2 (ja) | 1982-11-08 |
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