JPS5747874A - Detection of end point of dry etching reaction - Google Patents

Detection of end point of dry etching reaction

Info

Publication number
JPS5747874A
JPS5747874A JP12156680A JP12156680A JPS5747874A JP S5747874 A JPS5747874 A JP S5747874A JP 12156680 A JP12156680 A JP 12156680A JP 12156680 A JP12156680 A JP 12156680A JP S5747874 A JPS5747874 A JP S5747874A
Authority
JP
Japan
Prior art keywords
end point
reaction
plasma
detected
wavelength region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12156680A
Other languages
English (en)
Other versions
JPS5752421B2 (ja
Inventor
Minoru Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12156680A priority Critical patent/JPS5747874A/ja
Publication of JPS5747874A publication Critical patent/JPS5747874A/ja
Publication of JPS5752421B2 publication Critical patent/JPS5752421B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP12156680A 1980-09-02 1980-09-02 Detection of end point of dry etching reaction Granted JPS5747874A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12156680A JPS5747874A (en) 1980-09-02 1980-09-02 Detection of end point of dry etching reaction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12156680A JPS5747874A (en) 1980-09-02 1980-09-02 Detection of end point of dry etching reaction

Publications (2)

Publication Number Publication Date
JPS5747874A true JPS5747874A (en) 1982-03-18
JPS5752421B2 JPS5752421B2 (ja) 1982-11-08

Family

ID=14814399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12156680A Granted JPS5747874A (en) 1980-09-02 1980-09-02 Detection of end point of dry etching reaction

Country Status (1)

Country Link
JP (1) JPS5747874A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57148349A (en) * 1981-03-11 1982-09-13 Hitachi Ltd Monitoring method for dry etching of silicon oxide
JPS5945946A (ja) * 1982-09-06 1984-03-15 Toyota Central Res & Dev Lab Inc 中空糸状多孔質ガラスの製造法
US4482424A (en) * 1983-05-06 1984-11-13 At&T Bell Laboratories Method for monitoring etching of resists by monitoring the flouresence of the unetched material
JPS63107026A (ja) * 1986-10-23 1988-05-12 Tokuda Seisakusho Ltd プラズマエツチング装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57148349A (en) * 1981-03-11 1982-09-13 Hitachi Ltd Monitoring method for dry etching of silicon oxide
JPS5945946A (ja) * 1982-09-06 1984-03-15 Toyota Central Res & Dev Lab Inc 中空糸状多孔質ガラスの製造法
JPS6257588B2 (ja) * 1982-09-06 1987-12-01 Toyoda Chuo Kenkyusho Kk
US4482424A (en) * 1983-05-06 1984-11-13 At&T Bell Laboratories Method for monitoring etching of resists by monitoring the flouresence of the unetched material
JPS63107026A (ja) * 1986-10-23 1988-05-12 Tokuda Seisakusho Ltd プラズマエツチング装置

Also Published As

Publication number Publication date
JPS5752421B2 (ja) 1982-11-08

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