JPS57148349A - Monitoring method for dry etching of silicon oxide - Google Patents

Monitoring method for dry etching of silicon oxide

Info

Publication number
JPS57148349A
JPS57148349A JP3389581A JP3389581A JPS57148349A JP S57148349 A JPS57148349 A JP S57148349A JP 3389581 A JP3389581 A JP 3389581A JP 3389581 A JP3389581 A JP 3389581A JP S57148349 A JPS57148349 A JP S57148349A
Authority
JP
Japan
Prior art keywords
glow discharge
silicon oxide
gas
light emission
produced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3389581A
Other languages
Japanese (ja)
Inventor
Hideo Komatsu
Tatsumi Mizutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3389581A priority Critical patent/JPS57148349A/en
Publication of JPS57148349A publication Critical patent/JPS57148349A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To monitor etching in progress and completion correctly and conveniently, by using glow discharge plasma to etch silicon oxide, and monitoring spectrum stregth of CO produced in plasma during etching process. CONSTITUTION:An SiO2 film is grown in certain thickness on an Si wafer surface by thermal oxidation. It is covered with a photoresist film having a pattern. It is arranged on a high-frequency electrode of a dry etcher with parallel plate electrode structure via ethylene tetrafluoride resin. Next, C3F8 gas is put in and gas pressure is set to approximately 13Pa. Glow discharge plasma is produced by high-frequency power at 13.56MHz. Co spectrum is measured by light emission intensity with a spectrophotometer. This tells the beginning of glow discharge by the wavelength of 451.09nm. The etching ends when the light emission intensity become constant at a low level after increasing rapidly. The wavelength takes various values by the gas enclosed here.
JP3389581A 1981-03-11 1981-03-11 Monitoring method for dry etching of silicon oxide Pending JPS57148349A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3389581A JPS57148349A (en) 1981-03-11 1981-03-11 Monitoring method for dry etching of silicon oxide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3389581A JPS57148349A (en) 1981-03-11 1981-03-11 Monitoring method for dry etching of silicon oxide

Publications (1)

Publication Number Publication Date
JPS57148349A true JPS57148349A (en) 1982-09-13

Family

ID=12399258

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3389581A Pending JPS57148349A (en) 1981-03-11 1981-03-11 Monitoring method for dry etching of silicon oxide

Country Status (1)

Country Link
JP (1) JPS57148349A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5747874A (en) * 1980-09-02 1982-03-18 Fujitsu Ltd Detection of end point of dry etching reaction

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5747874A (en) * 1980-09-02 1982-03-18 Fujitsu Ltd Detection of end point of dry etching reaction

Similar Documents

Publication Publication Date Title
KR100704108B1 (en) Method for detecting an end point for an oxygen free plasma process
US4617079A (en) Plasma etching system
JPS56158873A (en) Dry etching method
JPS61256637A (en) Monitoring of plasma etching process
JPS6245119A (en) Dry etching device
JPS60170940A (en) Etching method
KR20050047126A (en) Apparatus and method for controlling etch depth
US4357195A (en) Apparatus for controlling a plasma reaction
JPH05275326A (en) Method for ashing resist
CA1071579A (en) End point control in plasma etching
JPS57148349A (en) Monitoring method for dry etching of silicon oxide
JPS54124683A (en) Processing method of silicon wafer
JPS5884431A (en) Plasma etching device
US6267121B1 (en) Process to season and determine condition of a high density plasma etcher
JP2944802B2 (en) Dry etching method
JPS5647572A (en) Etching method of indium oxide film
JPS5587435A (en) Method of producing semiconductor device
JPS57114235A (en) Cleaning of semiconductor substrate
JPS5673438A (en) Dryetching monitoring method for nitriding silicon
JPS5524941A (en) Dry etching apparatus
KR100466969B1 (en) Process byproduct removal method of semiconductor plasma etching chamber
JPH0766173A (en) Plasma etching method
JPS5715422A (en) Method and apparatus for judging final point of etching
JPS56129325A (en) Dry etching
EP0255265A3 (en) Plasma etching process and apparatus