JPS574186A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS574186A
JPS574186A JP7742280A JP7742280A JPS574186A JP S574186 A JPS574186 A JP S574186A JP 7742280 A JP7742280 A JP 7742280A JP 7742280 A JP7742280 A JP 7742280A JP S574186 A JPS574186 A JP S574186A
Authority
JP
Japan
Prior art keywords
layer
forbidden band
type
type inp
ego
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7742280A
Other languages
Japanese (ja)
Inventor
Takao Furuse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7742280A priority Critical patent/JPS574186A/en
Publication of JPS574186A publication Critical patent/JPS574186A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To lower the threshold, and to improve the efficiency of an external differential quantum by a method wherein a carrier confining layer with large forbidden band width is stacked on an active layer and a layer with a periodic unevenness of the confining layer, and a refractive index and forbidden band width are determined according to prescribed manners. CONSTITUTION:N and P type InGaAsP guiding layers 23, 25 (N1<No, Ego<Egl) and further N and P type InP clad layers 22, 26 (N3<N1, Eg1<Eg3) are laminated at both sides of the N type InGaAsP active layer 24 (the refractive index is No and the forbidden band with is Ego) of an N type InP substrate 21, and a P type InGaAsP layer 27 (N4>N3) is attached on the P layer 26. The layer 27 is coated with a photoresist, a diffraction grating is formed by means of the interference exposure of an ultraviolet laser and an etched groove is made up. P type InP 28 is grown on the layer 27 to which the periodic unevenness is formed, and ohmic electrodes 29, 30 are attched. Light required for oscillation is fed back on the periodic uneveness, and the excellent single-mode oscillating laser having the low threshold can be obtained.
JP7742280A 1980-06-09 1980-06-09 Semiconductor laser Pending JPS574186A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7742280A JPS574186A (en) 1980-06-09 1980-06-09 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7742280A JPS574186A (en) 1980-06-09 1980-06-09 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS574186A true JPS574186A (en) 1982-01-09

Family

ID=13633523

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7742280A Pending JPS574186A (en) 1980-06-09 1980-06-09 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS574186A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997009760A1 (en) * 1995-09-08 1997-03-13 Sarnoff Corporation Semiconductor distributed feedback laser diode
JP2003283046A (en) * 2002-03-22 2003-10-03 Sumitomo Electric Ind Ltd Semiconductor laser element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997009760A1 (en) * 1995-09-08 1997-03-13 Sarnoff Corporation Semiconductor distributed feedback laser diode
JP2003283046A (en) * 2002-03-22 2003-10-03 Sumitomo Electric Ind Ltd Semiconductor laser element

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