JPS574155A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS574155A
JPS574155A JP7715280A JP7715280A JPS574155A JP S574155 A JPS574155 A JP S574155A JP 7715280 A JP7715280 A JP 7715280A JP 7715280 A JP7715280 A JP 7715280A JP S574155 A JPS574155 A JP S574155A
Authority
JP
Japan
Prior art keywords
type
contact surface
impurities
electric pole
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7715280A
Other languages
Japanese (ja)
Inventor
Masamichi Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP7715280A priority Critical patent/JPS574155A/en
Publication of JPS574155A publication Critical patent/JPS574155A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To prevent a contact resistance from being increased even if a growth of crystal is made at a contact surface by a method wherein impurities with n type or p<+> type semiconductor made of Si contained in Al electric pole are doped. CONSTITUTION:Al electric pole 11 with Si having n type or p<+> impurities is formed on a contact surface 12 of n type substrate plate 5. Thereby, either n type or p<+> type crystal growing layer 13 is formed on the contact surface 12 by a solid phase epitaxial growth. Thus, only n-n junction or p<+>-n junction showing no characteristic of rectifying current under a tunnel effect is formed, so that an increased contact resistance is not occured even if a heat treatment is performed.
JP7715280A 1980-06-10 1980-06-10 Semiconductor device Pending JPS574155A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7715280A JPS574155A (en) 1980-06-10 1980-06-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7715280A JPS574155A (en) 1980-06-10 1980-06-10 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS574155A true JPS574155A (en) 1982-01-09

Family

ID=13625809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7715280A Pending JPS574155A (en) 1980-06-10 1980-06-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS574155A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59194467A (en) * 1983-04-20 1984-11-05 Toshiba Corp Wiring material of semiconductor device
JPS60245164A (en) * 1984-05-18 1985-12-04 Fujitsu Ltd Manufacture of diode array

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59194467A (en) * 1983-04-20 1984-11-05 Toshiba Corp Wiring material of semiconductor device
JPH0216590B2 (en) * 1983-04-20 1990-04-17 Tokyo Shibaura Electric Co
JPS60245164A (en) * 1984-05-18 1985-12-04 Fujitsu Ltd Manufacture of diode array

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