JPS5738396A - Manufacture of single crystal - Google Patents
Manufacture of single crystalInfo
- Publication number
- JPS5738396A JPS5738396A JP11505980A JP11505980A JPS5738396A JP S5738396 A JPS5738396 A JP S5738396A JP 11505980 A JP11505980 A JP 11505980A JP 11505980 A JP11505980 A JP 11505980A JP S5738396 A JPS5738396 A JP S5738396A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- single crystal
- melt
- manufacture
- droplets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To prevent the occurrence of crystal defects due to droplets in the manufacture of a high purity single crystal by the Czochralski method by removing droplets produced at the bottom of a single crystal before they are solidified.
CONSTITUTION: A quartz crucible 23 is mounted on a rotary shaft 24 in a reactor 21, and starting material 27 for a single crystal is put in the crucible 23. The material is melted with a heater 22, and a seed crystal 28 is dipped in the melt 27. While rotating the crucible 23 and the crystal 28, the melt 27 is cooled slowly, and the crystal 28 is pulled up little by little. A single crystal 34 is grown at the tip of the seed crystal 28 to manufacture a high purity single crystal. When the crystal 34 is pulled up by about 60W70% of the melt 27, it is separated from the melt 27, and droplets produced at the bottom of the crystal are removed with a removing tool 32 before they are solidified by cooling. Thus, a high quality single crystal free from crystal defects due to droplets can be manufactured.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11505980A JPS5738396A (en) | 1980-08-21 | 1980-08-21 | Manufacture of single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11505980A JPS5738396A (en) | 1980-08-21 | 1980-08-21 | Manufacture of single crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5738396A true JPS5738396A (en) | 1982-03-03 |
Family
ID=14653149
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11505980A Pending JPS5738396A (en) | 1980-08-21 | 1980-08-21 | Manufacture of single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5738396A (en) |
-
1980
- 1980-08-21 JP JP11505980A patent/JPS5738396A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
MY112515A (en) | Method for preparing molten silicon melt from polycrystalline silicon charge | |
JPS5738396A (en) | Manufacture of single crystal | |
EP0390671A3 (en) | Process for determination of concentrations of metal impurities in czochralski single crystal silicon | |
JPH089520B2 (en) | Method of manufacturing thin film single crystal | |
EP0355833B1 (en) | Method of producing compound semiconductor single crystal | |
JPS5692192A (en) | Method for growing semiconductor single crystal | |
DE3802531A1 (en) | Process for separating solid particles from silicon melts | |
JPS55140792A (en) | Manufacture of 3-5 group compound semiconductor single crystal | |
JPS5534115A (en) | Crystallization method | |
JPS56149399A (en) | Liquid phase epitaxial growing method | |
JPS5738397A (en) | Apparatus and method for growing crystal | |
JPS56104799A (en) | Production of si single crystal and device therefor | |
JPS5654299A (en) | Growing method of lead molybdate single crystal | |
JPS56169736A (en) | Preparation of high purity aluminum | |
JPS55126596A (en) | Production of single crystal | |
JPS6418993A (en) | Production of bi12sio20 single crystal | |
JPS55167200A (en) | Crystal growing method | |
JPS57129896A (en) | Liquid phase epitaxial growing apparatus | |
JPS56112429A (en) | Purifying method for impure aluminum | |
JPS553312A (en) | Production of oxide single crystal | |
JPS5523070A (en) | Production of lithium tantalate single crystal | |
JPS57179094A (en) | Method and apparatus for manufacturing single crystal | |
JPS577895A (en) | Manufacture of single crystal | |
JPS5684397A (en) | Single crystal growing method | |
KR950018696A (en) | Monocrystalline manufacturing method and apparatus used therefor |