JPS5738396A - Manufacture of single crystal - Google Patents

Manufacture of single crystal

Info

Publication number
JPS5738396A
JPS5738396A JP11505980A JP11505980A JPS5738396A JP S5738396 A JPS5738396 A JP S5738396A JP 11505980 A JP11505980 A JP 11505980A JP 11505980 A JP11505980 A JP 11505980A JP S5738396 A JPS5738396 A JP S5738396A
Authority
JP
Japan
Prior art keywords
crystal
single crystal
melt
manufacture
droplets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11505980A
Other languages
Japanese (ja)
Inventor
Shoichi Inoue
Kazutaka Terajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11505980A priority Critical patent/JPS5738396A/en
Publication of JPS5738396A publication Critical patent/JPS5738396A/en
Pending legal-status Critical Current

Links

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To prevent the occurrence of crystal defects due to droplets in the manufacture of a high purity single crystal by the Czochralski method by removing droplets produced at the bottom of a single crystal before they are solidified.
CONSTITUTION: A quartz crucible 23 is mounted on a rotary shaft 24 in a reactor 21, and starting material 27 for a single crystal is put in the crucible 23. The material is melted with a heater 22, and a seed crystal 28 is dipped in the melt 27. While rotating the crucible 23 and the crystal 28, the melt 27 is cooled slowly, and the crystal 28 is pulled up little by little. A single crystal 34 is grown at the tip of the seed crystal 28 to manufacture a high purity single crystal. When the crystal 34 is pulled up by about 60W70% of the melt 27, it is separated from the melt 27, and droplets produced at the bottom of the crystal are removed with a removing tool 32 before they are solidified by cooling. Thus, a high quality single crystal free from crystal defects due to droplets can be manufactured.
COPYRIGHT: (C)1982,JPO&Japio
JP11505980A 1980-08-21 1980-08-21 Manufacture of single crystal Pending JPS5738396A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11505980A JPS5738396A (en) 1980-08-21 1980-08-21 Manufacture of single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11505980A JPS5738396A (en) 1980-08-21 1980-08-21 Manufacture of single crystal

Publications (1)

Publication Number Publication Date
JPS5738396A true JPS5738396A (en) 1982-03-03

Family

ID=14653149

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11505980A Pending JPS5738396A (en) 1980-08-21 1980-08-21 Manufacture of single crystal

Country Status (1)

Country Link
JP (1) JPS5738396A (en)

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