JPS5734380A - Semiconductor laser with surge voltage prevention circuit - Google Patents

Semiconductor laser with surge voltage prevention circuit

Info

Publication number
JPS5734380A
JPS5734380A JP10884780A JP10884780A JPS5734380A JP S5734380 A JPS5734380 A JP S5734380A JP 10884780 A JP10884780 A JP 10884780A JP 10884780 A JP10884780 A JP 10884780A JP S5734380 A JPS5734380 A JP S5734380A
Authority
JP
Japan
Prior art keywords
laser
type inp
inp layer
diode
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10884780A
Other languages
Japanese (ja)
Inventor
Tomoo Yanase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10884780A priority Critical patent/JPS5734380A/en
Publication of JPS5734380A publication Critical patent/JPS5734380A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To avoid breakdown in spite of application of a surge voltage on a laser terminal by installation of a laser diode region where laser oscillation takes place and a P-N junction diode disposed in electrically parallel connection with the former on one semiconductor substrate. CONSTITUTION:A sinked double hetero junction laser 11 is formed on a half side of an N type InP substrate 21 and on another half side a reversed surge protecting diode 13 is prepared, and each diode is connected in a parallel arrangment by means of a positive electrode 29 and a negative electrode 30. In this constitution the laser 11 consists of an InGaAsP active layer 23 surrounded by an N type InP layer 25, a P type InP layer 24, a P type InP layer 26 and an N thpe InP layer 27. And the diode 13 consists of an N type InP layer 27 surrounded by a P type InP layer 28, and crossing region of the positive electrode 29 and the negative electrode 30 is insulated by an SiO2 film 31. By this constitution the laser is protected against surge voltages and in addition a low oscillation threshold current is obtained.
JP10884780A 1980-08-08 1980-08-08 Semiconductor laser with surge voltage prevention circuit Pending JPS5734380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10884780A JPS5734380A (en) 1980-08-08 1980-08-08 Semiconductor laser with surge voltage prevention circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10884780A JPS5734380A (en) 1980-08-08 1980-08-08 Semiconductor laser with surge voltage prevention circuit

Publications (1)

Publication Number Publication Date
JPS5734380A true JPS5734380A (en) 1982-02-24

Family

ID=14495086

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10884780A Pending JPS5734380A (en) 1980-08-08 1980-08-08 Semiconductor laser with surge voltage prevention circuit

Country Status (1)

Country Link
JP (1) JPS5734380A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0650235A2 (en) * 1993-10-20 1995-04-26 Kabushiki Kaisha Toshiba Semiconductor laser device
EP0808521A1 (en) * 1995-02-10 1997-11-26 Opto Power Corporation Laser package with reversed laser diode
EP0933842A2 (en) * 1998-01-30 1999-08-04 Motorola, Inc. Semiconductor laser having electro-static discharge protection

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5495493A (en) * 1993-01-20 1996-02-27 Kabushiki Kaisha Toshiba Semiconductor laser device
EP0650235A2 (en) * 1993-10-20 1995-04-26 Kabushiki Kaisha Toshiba Semiconductor laser device
EP0650235A3 (en) * 1993-10-20 1995-05-03 Toshiba Kk Semiconductor laser device.
EP0808521A1 (en) * 1995-02-10 1997-11-26 Opto Power Corporation Laser package with reversed laser diode
EP0808521A4 (en) * 1995-02-10 1998-05-06 Opto Power Corp Laser package with reversed laser diode
EP0933842A2 (en) * 1998-01-30 1999-08-04 Motorola, Inc. Semiconductor laser having electro-static discharge protection
EP0933842A3 (en) * 1998-01-30 1999-10-06 Motorola, Inc. Semiconductor laser having electro-static discharge protection

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