JPS5734380A - Semiconductor laser with surge voltage prevention circuit - Google Patents
Semiconductor laser with surge voltage prevention circuitInfo
- Publication number
- JPS5734380A JPS5734380A JP10884780A JP10884780A JPS5734380A JP S5734380 A JPS5734380 A JP S5734380A JP 10884780 A JP10884780 A JP 10884780A JP 10884780 A JP10884780 A JP 10884780A JP S5734380 A JPS5734380 A JP S5734380A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- type inp
- inp layer
- diode
- constitution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000002265 prevention Effects 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000010355 oscillation Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 125000005842 heteroatom Chemical group 0.000 abstract 1
- 238000009434 installation Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To avoid breakdown in spite of application of a surge voltage on a laser terminal by installation of a laser diode region where laser oscillation takes place and a P-N junction diode disposed in electrically parallel connection with the former on one semiconductor substrate. CONSTITUTION:A sinked double hetero junction laser 11 is formed on a half side of an N type InP substrate 21 and on another half side a reversed surge protecting diode 13 is prepared, and each diode is connected in a parallel arrangment by means of a positive electrode 29 and a negative electrode 30. In this constitution the laser 11 consists of an InGaAsP active layer 23 surrounded by an N type InP layer 25, a P type InP layer 24, a P type InP layer 26 and an N thpe InP layer 27. And the diode 13 consists of an N type InP layer 27 surrounded by a P type InP layer 28, and crossing region of the positive electrode 29 and the negative electrode 30 is insulated by an SiO2 film 31. By this constitution the laser is protected against surge voltages and in addition a low oscillation threshold current is obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10884780A JPS5734380A (en) | 1980-08-08 | 1980-08-08 | Semiconductor laser with surge voltage prevention circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10884780A JPS5734380A (en) | 1980-08-08 | 1980-08-08 | Semiconductor laser with surge voltage prevention circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5734380A true JPS5734380A (en) | 1982-02-24 |
Family
ID=14495086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10884780A Pending JPS5734380A (en) | 1980-08-08 | 1980-08-08 | Semiconductor laser with surge voltage prevention circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5734380A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0650235A2 (en) * | 1993-10-20 | 1995-04-26 | Kabushiki Kaisha Toshiba | Semiconductor laser device |
EP0808521A1 (en) * | 1995-02-10 | 1997-11-26 | Opto Power Corporation | Laser package with reversed laser diode |
EP0933842A2 (en) * | 1998-01-30 | 1999-08-04 | Motorola, Inc. | Semiconductor laser having electro-static discharge protection |
-
1980
- 1980-08-08 JP JP10884780A patent/JPS5734380A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5495493A (en) * | 1993-01-20 | 1996-02-27 | Kabushiki Kaisha Toshiba | Semiconductor laser device |
EP0650235A2 (en) * | 1993-10-20 | 1995-04-26 | Kabushiki Kaisha Toshiba | Semiconductor laser device |
EP0650235A3 (en) * | 1993-10-20 | 1995-05-03 | Toshiba Kk | Semiconductor laser device. |
EP0808521A1 (en) * | 1995-02-10 | 1997-11-26 | Opto Power Corporation | Laser package with reversed laser diode |
EP0808521A4 (en) * | 1995-02-10 | 1998-05-06 | Opto Power Corp | Laser package with reversed laser diode |
EP0933842A2 (en) * | 1998-01-30 | 1999-08-04 | Motorola, Inc. | Semiconductor laser having electro-static discharge protection |
EP0933842A3 (en) * | 1998-01-30 | 1999-10-06 | Motorola, Inc. | Semiconductor laser having electro-static discharge protection |
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