JPS5732624A - Fabrication of semiconductor device - Google Patents

Fabrication of semiconductor device

Info

Publication number
JPS5732624A
JPS5732624A JP10734280A JP10734280A JPS5732624A JP S5732624 A JPS5732624 A JP S5732624A JP 10734280 A JP10734280 A JP 10734280A JP 10734280 A JP10734280 A JP 10734280A JP S5732624 A JPS5732624 A JP S5732624A
Authority
JP
Japan
Prior art keywords
electrode
aluminum
layer
contact
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10734280A
Other languages
Japanese (ja)
Inventor
Moritomo Ito
Masao Kanazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10734280A priority Critical patent/JPS5732624A/en
Publication of JPS5732624A publication Critical patent/JPS5732624A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain the wiring excellent in connection by a method wherein an electrode connection hole is provided on an insulating layer made up over a semiconductor substrate and an electode material is fitted in this hole and fused, and afterwards, the wirings overspreading on the insulating layer in contact with the electrode material is formed. CONSTITUTION:An insulating layer 14 and a PSG layer 18 are formed on a semiconductor substrate 11. Subsequently, after making up an opening hole 17 for contact use using a photoresist 19 as a masking material, aluminum layers 20 and 21 are formed by evaporation. Fusing the photoresist 19 and removing the aluminum layer 20, the aluminum deposit 21 for electrode use remains only. Following these processes, by fusing the aluminum within a nonoxidizing type gas, the surface is smoothed. Finally, depositing an aluminum layer to constitute a wiring layer and patterning, a wiring layer 22 which keeps good contact with the electrode 21 is formed. Because the surface of the electrode 21' is smoothed, the contact between the aluminum for use of wiring and the electrode 21' is kept complete.
JP10734280A 1980-08-05 1980-08-05 Fabrication of semiconductor device Pending JPS5732624A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10734280A JPS5732624A (en) 1980-08-05 1980-08-05 Fabrication of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10734280A JPS5732624A (en) 1980-08-05 1980-08-05 Fabrication of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5732624A true JPS5732624A (en) 1982-02-22

Family

ID=14456612

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10734280A Pending JPS5732624A (en) 1980-08-05 1980-08-05 Fabrication of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5732624A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4214334Y1 (en) * 1965-01-12 1967-08-16
JPS509551A (en) * 1973-05-30 1975-01-31

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4214334Y1 (en) * 1965-01-12 1967-08-16
JPS509551A (en) * 1973-05-30 1975-01-31

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