JPS5732376A - Dry etching method - Google Patents

Dry etching method

Info

Publication number
JPS5732376A
JPS5732376A JP10590580A JP10590580A JPS5732376A JP S5732376 A JPS5732376 A JP S5732376A JP 10590580 A JP10590580 A JP 10590580A JP 10590580 A JP10590580 A JP 10590580A JP S5732376 A JPS5732376 A JP S5732376A
Authority
JP
Japan
Prior art keywords
galvanometer
film
etching
tank
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10590580A
Other languages
Japanese (ja)
Inventor
Shinya Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10590580A priority Critical patent/JPS5732376A/en
Publication of JPS5732376A publication Critical patent/JPS5732376A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To easily detect the end of etching on the basis of a reduction of an electric current flowing through a galvanometer by connecting a part of an electrically conductive thin film coated with a mask layer on an insulator substrate to earth through the galvanometer. CONSTITUTION:A glass substrate 1 is mounted on a lower electrode 5 in a plasma etching tank 4 with a thin Cr film 2 upward. The tip of a leading wire 6 such as an Al wire is brought into contact with part of the film 2 coated with a photoresist film 3, and the wire 6 is led out of the tank 4 and connected to one end of a galvanometer 7. The other end of the galvanometer 7 is connected to earth. A reactive gas is then introduced into the tank 4, and by applying a high frequency voltage between an upper electrode 8 and the lower electrode 5, the gas is activated to selectively eoch the exposed part of the film 2. An ionic current flowing through the galvanometer 7 almost constantly is reduced at the end of etching and becomes almost zero, so the end of the etching can be detected.
JP10590580A 1980-07-31 1980-07-31 Dry etching method Pending JPS5732376A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10590580A JPS5732376A (en) 1980-07-31 1980-07-31 Dry etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10590580A JPS5732376A (en) 1980-07-31 1980-07-31 Dry etching method

Publications (1)

Publication Number Publication Date
JPS5732376A true JPS5732376A (en) 1982-02-22

Family

ID=14419883

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10590580A Pending JPS5732376A (en) 1980-07-31 1980-07-31 Dry etching method

Country Status (1)

Country Link
JP (1) JPS5732376A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH036818A (en) * 1989-06-02 1991-01-14 Mitsubishi Electric Corp Manufacture of semiconductor
US5575887A (en) * 1994-03-25 1996-11-19 Nippondenso Co., Ltd. Plasma etching method and device manufacturing method thereby

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5562169A (en) * 1978-11-01 1980-05-10 Toshiba Corp Ion-etching method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5562169A (en) * 1978-11-01 1980-05-10 Toshiba Corp Ion-etching method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH036818A (en) * 1989-06-02 1991-01-14 Mitsubishi Electric Corp Manufacture of semiconductor
US5575887A (en) * 1994-03-25 1996-11-19 Nippondenso Co., Ltd. Plasma etching method and device manufacturing method thereby

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