JPS5732376A - Dry etching method - Google Patents
Dry etching methodInfo
- Publication number
- JPS5732376A JPS5732376A JP10590580A JP10590580A JPS5732376A JP S5732376 A JPS5732376 A JP S5732376A JP 10590580 A JP10590580 A JP 10590580A JP 10590580 A JP10590580 A JP 10590580A JP S5732376 A JPS5732376 A JP S5732376A
- Authority
- JP
- Japan
- Prior art keywords
- galvanometer
- film
- etching
- tank
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To easily detect the end of etching on the basis of a reduction of an electric current flowing through a galvanometer by connecting a part of an electrically conductive thin film coated with a mask layer on an insulator substrate to earth through the galvanometer. CONSTITUTION:A glass substrate 1 is mounted on a lower electrode 5 in a plasma etching tank 4 with a thin Cr film 2 upward. The tip of a leading wire 6 such as an Al wire is brought into contact with part of the film 2 coated with a photoresist film 3, and the wire 6 is led out of the tank 4 and connected to one end of a galvanometer 7. The other end of the galvanometer 7 is connected to earth. A reactive gas is then introduced into the tank 4, and by applying a high frequency voltage between an upper electrode 8 and the lower electrode 5, the gas is activated to selectively eoch the exposed part of the film 2. An ionic current flowing through the galvanometer 7 almost constantly is reduced at the end of etching and becomes almost zero, so the end of the etching can be detected.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10590580A JPS5732376A (en) | 1980-07-31 | 1980-07-31 | Dry etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10590580A JPS5732376A (en) | 1980-07-31 | 1980-07-31 | Dry etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5732376A true JPS5732376A (en) | 1982-02-22 |
Family
ID=14419883
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10590580A Pending JPS5732376A (en) | 1980-07-31 | 1980-07-31 | Dry etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5732376A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH036818A (en) * | 1989-06-02 | 1991-01-14 | Mitsubishi Electric Corp | Manufacture of semiconductor |
US5575887A (en) * | 1994-03-25 | 1996-11-19 | Nippondenso Co., Ltd. | Plasma etching method and device manufacturing method thereby |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5562169A (en) * | 1978-11-01 | 1980-05-10 | Toshiba Corp | Ion-etching method |
-
1980
- 1980-07-31 JP JP10590580A patent/JPS5732376A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5562169A (en) * | 1978-11-01 | 1980-05-10 | Toshiba Corp | Ion-etching method |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH036818A (en) * | 1989-06-02 | 1991-01-14 | Mitsubishi Electric Corp | Manufacture of semiconductor |
US5575887A (en) * | 1994-03-25 | 1996-11-19 | Nippondenso Co., Ltd. | Plasma etching method and device manufacturing method thereby |
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