JPS5731175A - Semiconductor element - Google Patents
Semiconductor elementInfo
- Publication number
- JPS5731175A JPS5731175A JP7666281A JP7666281A JPS5731175A JP S5731175 A JPS5731175 A JP S5731175A JP 7666281 A JP7666281 A JP 7666281A JP 7666281 A JP7666281 A JP 7666281A JP S5731175 A JPS5731175 A JP S5731175A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- base
- emitter
- dielectric breakdown
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000015556 catabolic process Effects 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To prevent discharge from occurring between an element electrode and a guard ring electrode, by surrounding the electrode part with an insulator having a higher dielectric breakdown strength than that of air. CONSTITUTION:A P base region 2 is formed on an N type Si substrate 1. An N emitter region is formed on the region 2. An Si oxide film 4 is formed on the substrate 1 during these processes. Next, a part of the oxide film 4 is removed from both base and emitter regions and the element peripheral part, and an emitter electrode, a base electrode 5 and a guard ring 7 are formed. Thereafter, the whole surface is coated with a PSG film except for bonding parts of the base and emitter electrodes. Finally, the whole is sealed with a resin material. This permits no dielectric breakdown between the electrode 5 and the gurad ring 7, even if a reverse- biased voltage enough to cause dielectric breakdown of air is applied between the base and the collector.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7666281A JPS5731175A (en) | 1981-05-22 | 1981-05-22 | Semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7666281A JPS5731175A (en) | 1981-05-22 | 1981-05-22 | Semiconductor element |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11032472A Division JPS5760775B2 (en) | 1972-11-06 | 1972-11-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5731175A true JPS5731175A (en) | 1982-02-19 |
Family
ID=13611614
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7666281A Pending JPS5731175A (en) | 1981-05-22 | 1981-05-22 | Semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5731175A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4722492A (en) * | 1982-11-01 | 1988-02-02 | Ryobi Ltd. | Magnetic brake for a fishing reel |
US4779814A (en) * | 1986-07-31 | 1988-10-25 | Ryobi, Ltd. | Backlash prevention device for fishing reel |
-
1981
- 1981-05-22 JP JP7666281A patent/JPS5731175A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4722492A (en) * | 1982-11-01 | 1988-02-02 | Ryobi Ltd. | Magnetic brake for a fishing reel |
US4779814A (en) * | 1986-07-31 | 1988-10-25 | Ryobi, Ltd. | Backlash prevention device for fishing reel |
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