JPS5731175A - Semiconductor element - Google Patents

Semiconductor element

Info

Publication number
JPS5731175A
JPS5731175A JP7666281A JP7666281A JPS5731175A JP S5731175 A JPS5731175 A JP S5731175A JP 7666281 A JP7666281 A JP 7666281A JP 7666281 A JP7666281 A JP 7666281A JP S5731175 A JPS5731175 A JP S5731175A
Authority
JP
Japan
Prior art keywords
electrode
base
emitter
dielectric breakdown
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7666281A
Other languages
Japanese (ja)
Inventor
Sumio Nishida
Eiichi Yamada
Kozo Aoyama
Tsuneyuki Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7666281A priority Critical patent/JPS5731175A/en
Publication of JPS5731175A publication Critical patent/JPS5731175A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To prevent discharge from occurring between an element electrode and a guard ring electrode, by surrounding the electrode part with an insulator having a higher dielectric breakdown strength than that of air. CONSTITUTION:A P base region 2 is formed on an N type Si substrate 1. An N emitter region is formed on the region 2. An Si oxide film 4 is formed on the substrate 1 during these processes. Next, a part of the oxide film 4 is removed from both base and emitter regions and the element peripheral part, and an emitter electrode, a base electrode 5 and a guard ring 7 are formed. Thereafter, the whole surface is coated with a PSG film except for bonding parts of the base and emitter electrodes. Finally, the whole is sealed with a resin material. This permits no dielectric breakdown between the electrode 5 and the gurad ring 7, even if a reverse- biased voltage enough to cause dielectric breakdown of air is applied between the base and the collector.
JP7666281A 1981-05-22 1981-05-22 Semiconductor element Pending JPS5731175A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7666281A JPS5731175A (en) 1981-05-22 1981-05-22 Semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7666281A JPS5731175A (en) 1981-05-22 1981-05-22 Semiconductor element

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP11032472A Division JPS5760775B2 (en) 1972-11-06 1972-11-06

Publications (1)

Publication Number Publication Date
JPS5731175A true JPS5731175A (en) 1982-02-19

Family

ID=13611614

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7666281A Pending JPS5731175A (en) 1981-05-22 1981-05-22 Semiconductor element

Country Status (1)

Country Link
JP (1) JPS5731175A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4722492A (en) * 1982-11-01 1988-02-02 Ryobi Ltd. Magnetic brake for a fishing reel
US4779814A (en) * 1986-07-31 1988-10-25 Ryobi, Ltd. Backlash prevention device for fishing reel

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4722492A (en) * 1982-11-01 1988-02-02 Ryobi Ltd. Magnetic brake for a fishing reel
US4779814A (en) * 1986-07-31 1988-10-25 Ryobi, Ltd. Backlash prevention device for fishing reel

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