JPS5727084A - Optical transmitter - Google Patents
Optical transmitterInfo
- Publication number
- JPS5727084A JPS5727084A JP10127980A JP10127980A JPS5727084A JP S5727084 A JPS5727084 A JP S5727084A JP 10127980 A JP10127980 A JP 10127980A JP 10127980 A JP10127980 A JP 10127980A JP S5727084 A JPS5727084 A JP S5727084A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- power source
- base potential
- voltage
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Optical Communication System (AREA)
Abstract
PURPOSE:To prevent deterioration and damage of a semiconductor laser in turning on and off a power source by making the base potential of one transistor higher than the base potential of the other transistor. CONSTITUTION:During the time a power source voltage -VEE, which is applied when the power source is turned on, is low and smaller than a voltage VZ of a Zener diode 5 in the reverse direction, the voltage at a reference voltage terminal A in a first reference voltage generating circuit 1 is about the ground potential due to a resistor R1. The base potential of the first transistor Tr1 is about the ground potential and higher than the base potential of the second transistor Tr2. Therefore the collector current of the first transistor Tr1 is small, and the overcurrent is not flowed in the semiconductor laser 4.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10127980A JPS5727084A (en) | 1980-07-25 | 1980-07-25 | Optical transmitter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10127980A JPS5727084A (en) | 1980-07-25 | 1980-07-25 | Optical transmitter |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5727084A true JPS5727084A (en) | 1982-02-13 |
Family
ID=14296425
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10127980A Pending JPS5727084A (en) | 1980-07-25 | 1980-07-25 | Optical transmitter |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5727084A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58151081A (en) * | 1982-03-04 | 1983-09-08 | Matsushita Electric Ind Co Ltd | Laser power source circuit |
-
1980
- 1980-07-25 JP JP10127980A patent/JPS5727084A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58151081A (en) * | 1982-03-04 | 1983-09-08 | Matsushita Electric Ind Co Ltd | Laser power source circuit |
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