JPS5726473A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5726473A
JPS5726473A JP10181880A JP10181880A JPS5726473A JP S5726473 A JPS5726473 A JP S5726473A JP 10181880 A JP10181880 A JP 10181880A JP 10181880 A JP10181880 A JP 10181880A JP S5726473 A JPS5726473 A JP S5726473A
Authority
JP
Japan
Prior art keywords
layer
electron
type
fet
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10181880A
Other languages
Japanese (ja)
Inventor
Takashi Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10181880A priority Critical patent/JPS5726473A/en
Publication of JPS5726473A publication Critical patent/JPS5726473A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To improve the controlling characteristics of a control rod in a normally ON type (depletion type) FET, by setting the density of N type impurity containing semiconductor forming an electron supplying layer less than a specific value. CONSTITUTION:A normally ON type FET is formed of an insulating substrate 1, a channel layer 2, an N type conductive type impurity electron supplying layer 3, a control electrode 4, and input and output electrodes 5, 6. In the FET, the thickness of the layer 3 is abruptly reduced in such a manner that the impurity density ND satisfies the formula (I), where epsilons represents dielectric constant of semiconductor forming the layer 3, DELTAEc represents the difference of affinities of the semiconductors forming the layers 3 and 2, q represents electron charge quantity, h represents Planck's constant, m* represents the effective mass of electron, and E represents the energy of the electron in the layer 2. Thus, the utility rate as the current path of the electron stored in the electron storage layer formed in the layer 2 can be improved. The thickness of the layer 3 can be reduced, and the electrostatic capacity between the electrode 4 and the electron storage layer can be increased, and the controlling characteristics of the electrode 4 can be improved.
JP10181880A 1980-07-24 1980-07-24 Semiconductor device Pending JPS5726473A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10181880A JPS5726473A (en) 1980-07-24 1980-07-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10181880A JPS5726473A (en) 1980-07-24 1980-07-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5726473A true JPS5726473A (en) 1982-02-12

Family

ID=14310696

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10181880A Pending JPS5726473A (en) 1980-07-24 1980-07-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5726473A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61230381A (en) * 1985-04-05 1986-10-14 Nec Corp Semiconductor device
JPS62209864A (en) * 1986-03-11 1987-09-16 Fujitsu Ltd Semiconductor device
JPS63187668A (en) * 1987-01-20 1988-08-03 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン Field effect transistor
US4972237A (en) * 1988-06-13 1990-11-20 Fujitsu Limited Metal-semiconductor field effect transistor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61230381A (en) * 1985-04-05 1986-10-14 Nec Corp Semiconductor device
JPS62209864A (en) * 1986-03-11 1987-09-16 Fujitsu Ltd Semiconductor device
JPS63187668A (en) * 1987-01-20 1988-08-03 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン Field effect transistor
US4972237A (en) * 1988-06-13 1990-11-20 Fujitsu Limited Metal-semiconductor field effect transistor device

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