JPS5726469A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- JPS5726469A JPS5726469A JP2350780A JP2350780A JPS5726469A JP S5726469 A JPS5726469 A JP S5726469A JP 2350780 A JP2350780 A JP 2350780A JP 2350780 A JP2350780 A JP 2350780A JP S5726469 A JPS5726469 A JP S5726469A
- Authority
- JP
- Japan
- Prior art keywords
- drain
- source
- film
- electrode
- memory device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000010408 film Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To enable the reduction of a memory device and the high speed reading of the memory by providing source and drain unitarily determined by gate and field insulator in a self-aligning manner. CONSTITUTION:Upside and downside insulating films 2 and 4 are formed in a lump cluster or in a structure disposed at both sides of a thin film 3, and a gate electrode 1 is provided at the film 2. Source 9 and drain 11 are provided partly at a semiconductor substrate 5, and are respectively formed over a field insulating film 12 buried in the substrate 5 with source electrode, lead 8, drain electrode, lead 10. At the film 12 are contacted a source 9 and drain 11 partly at the side faces, and the source 9 and the drain 11 unitarily determined by the electrode 1 and the film 12 are formed in a self-aligning manner. Thus, the memory device can be reduced, and high speed reading of the memory can be performed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2350780A JPS5726469A (en) | 1980-02-27 | 1980-02-27 | Semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2350780A JPS5726469A (en) | 1980-02-27 | 1980-02-27 | Semiconductor memory device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1895971A Division JPS5641182B1 (en) | 1970-10-27 | 1971-03-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5726469A true JPS5726469A (en) | 1982-02-12 |
Family
ID=12112369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2350780A Pending JPS5726469A (en) | 1980-02-27 | 1980-02-27 | Semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5726469A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999038213A1 (en) * | 1998-01-26 | 1999-07-29 | Sony Corporation | Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device |
-
1980
- 1980-02-27 JP JP2350780A patent/JPS5726469A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999038213A1 (en) * | 1998-01-26 | 1999-07-29 | Sony Corporation | Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device |
JPH11274420A (en) * | 1998-01-26 | 1999-10-08 | Sony Corp | Memory device, its manufacture, integrated circuit, and manufacture of semiconductor device |
EP0971416A1 (en) * | 1998-01-26 | 2000-01-12 | Sony Corporation | Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device |
EP0971416A4 (en) * | 1998-01-26 | 2000-08-09 | Sony Corp | Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device |
US6285055B1 (en) | 1998-01-26 | 2001-09-04 | Sony Corporation | Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device |
KR100638772B1 (en) * | 1998-01-26 | 2006-10-27 | 소니 가부시끼 가이샤 | Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device |
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