JPS5726443A - Method of stabilizing surface of silicon device - Google Patents

Method of stabilizing surface of silicon device

Info

Publication number
JPS5726443A
JPS5726443A JP8554981A JP8554981A JPS5726443A JP S5726443 A JPS5726443 A JP S5726443A JP 8554981 A JP8554981 A JP 8554981A JP 8554981 A JP8554981 A JP 8554981A JP S5726443 A JPS5726443 A JP S5726443A
Authority
JP
Japan
Prior art keywords
silicon layer
silicon device
stabilizing surface
silicon
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8554981A
Other languages
English (en)
Inventor
Daate Yoahimu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5726443A publication Critical patent/JPS5726443A/ja
Pending legal-status Critical Current

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    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Formation Of Insulating Films (AREA)
JP8554981A 1980-06-04 1981-06-03 Method of stabilizing surface of silicon device Pending JPS5726443A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19803021175 DE3021175A1 (de) 1980-06-04 1980-06-04 Verfahren zum passivieren von siliciumbauelementen

Publications (1)

Publication Number Publication Date
JPS5726443A true JPS5726443A (en) 1982-02-12

Family

ID=6103950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8554981A Pending JPS5726443A (en) 1980-06-04 1981-06-03 Method of stabilizing surface of silicon device

Country Status (4)

Country Link
US (1) US4717617A (ja)
EP (1) EP0041684B1 (ja)
JP (1) JPS5726443A (ja)
DE (1) DE3021175A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6135523A (ja) * 1984-07-27 1986-02-20 New Japan Radio Co Ltd 半導体装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3542166A1 (de) * 1985-11-29 1987-06-04 Telefunken Electronic Gmbh Halbleiterbauelement

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5326692A (en) * 1976-08-23 1978-03-11 Ibm Method of forming aluminum silicon conductor structure without projection
JPS53105989A (en) * 1977-02-28 1978-09-14 Hitachi Ltd Semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3740835A (en) * 1970-08-31 1973-06-26 Fairchild Camera Instr Co Method of forming semiconductor device contacts
US3881971A (en) * 1972-11-29 1975-05-06 Ibm Method for fabricating aluminum interconnection metallurgy system for silicon devices
US3918149A (en) * 1974-06-28 1975-11-11 Intel Corp Al/Si metallization process
DE2632647A1 (de) * 1976-07-20 1978-01-26 Siemens Ag Halbleiterbauelement mit passivierender schutzschicht
IN147578B (ja) * 1977-02-24 1980-04-19 Rca Corp
DE2730367A1 (de) * 1977-07-05 1979-01-18 Siemens Ag Verfahren zum passivieren von halbleiterelementen

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5326692A (en) * 1976-08-23 1978-03-11 Ibm Method of forming aluminum silicon conductor structure without projection
JPS53105989A (en) * 1977-02-28 1978-09-14 Hitachi Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6135523A (ja) * 1984-07-27 1986-02-20 New Japan Radio Co Ltd 半導体装置

Also Published As

Publication number Publication date
EP0041684B1 (de) 1985-06-05
EP0041684A1 (de) 1981-12-16
US4717617A (en) 1988-01-05
DE3021175A1 (de) 1981-12-10
DE3021175C2 (ja) 1987-07-30

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