JPS5726430A - Forming method for electrode and wiring layer of semiconductor device - Google Patents
Forming method for electrode and wiring layer of semiconductor deviceInfo
- Publication number
- JPS5726430A JPS5726430A JP10199980A JP10199980A JPS5726430A JP S5726430 A JPS5726430 A JP S5726430A JP 10199980 A JP10199980 A JP 10199980A JP 10199980 A JP10199980 A JP 10199980A JP S5726430 A JPS5726430 A JP S5726430A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- layer
- aluminum
- semiconductor device
- wiring layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 150000001805 chlorine compounds Chemical class 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain aluminum electrode and wire of microminiature pattern by coating a mask of high molecular material via a layer of Mo or the like readily forming chloride on an aluminum layer and sequentially etching it with gas plasma including Cl2. CONSTITUTION:An aluminum layer 4 is formed on an SiO2 film 3 exposed at the active layer 2 of a substrate 1. Then, an Mo layer 5 and a resist mask 6 are formed. When it is etched with gas plasma of CCl4:Ar=3:7, the chlorides of Mo and Al are sequentially formed, and no alumina is formed on the aluminum surface. Thus, microminiature electrode and wire patterns can be formed. Cr, Ti, etc. readily forming chloride can be used in addition to the Mo.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10199980A JPS5726430A (en) | 1980-07-24 | 1980-07-24 | Forming method for electrode and wiring layer of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10199980A JPS5726430A (en) | 1980-07-24 | 1980-07-24 | Forming method for electrode and wiring layer of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5726430A true JPS5726430A (en) | 1982-02-12 |
Family
ID=14315507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10199980A Pending JPS5726430A (en) | 1980-07-24 | 1980-07-24 | Forming method for electrode and wiring layer of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5726430A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5934647A (en) * | 1982-08-20 | 1984-02-25 | Matsushita Electronics Corp | Manufacture of semiconductor device |
-
1980
- 1980-07-24 JP JP10199980A patent/JPS5726430A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5934647A (en) * | 1982-08-20 | 1984-02-25 | Matsushita Electronics Corp | Manufacture of semiconductor device |
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