JPS57198688A - Semiconductor light emitting element - Google Patents

Semiconductor light emitting element

Info

Publication number
JPS57198688A
JPS57198688A JP8401981A JP8401981A JPS57198688A JP S57198688 A JPS57198688 A JP S57198688A JP 8401981 A JP8401981 A JP 8401981A JP 8401981 A JP8401981 A JP 8401981A JP S57198688 A JPS57198688 A JP S57198688A
Authority
JP
Japan
Prior art keywords
layer
type inp
type
substrate
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8401981A
Other languages
Japanese (ja)
Inventor
Itsuo Umeo
Toshiyuki Tanahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8401981A priority Critical patent/JPS57198688A/en
Publication of JPS57198688A publication Critical patent/JPS57198688A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To decrease a wattless current and to obtain the element having the high light emitting efficiency by providing a groove, which enters a substrate, in an N type InP substrate, on which P type and N type InP layers are grown, providing an InGaAsP active layer in said groove through an N type InP layer, and surrounding it by the N type InP layer. CONSTITUTION:On an N type InP substrate 31, a P type InP layer 34, an N type InP layer 35, and a P type InP layer 36 are layered and epitaxially grown in a liquid phase. The groove, which enters the substrate 31 from the central part of the surface of the layer 36 and has a desired stripe width, is formed. Then the inside of the groove is buried by an N type InP layer 32. An InGaAs active layer 33 is deposited on the surface of the layer 32. An N type InP layer 37 and an InGaAsP layer 38 having the same composition of the layer 33 are deposited on the layer 36 surrounding said layters. Thereafter, a P type InP layer 39 is grown on the entire surface so as to bury the still remaining groove on the layer 33. The surface is coated bya P<+> type InGaAsP layer 40. A P side electrode 102 is deposited on the 40, and an N type electrode 101 is deposited on the back surface of the substrate 31.
JP8401981A 1981-06-01 1981-06-01 Semiconductor light emitting element Pending JPS57198688A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8401981A JPS57198688A (en) 1981-06-01 1981-06-01 Semiconductor light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8401981A JPS57198688A (en) 1981-06-01 1981-06-01 Semiconductor light emitting element

Publications (1)

Publication Number Publication Date
JPS57198688A true JPS57198688A (en) 1982-12-06

Family

ID=13818849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8401981A Pending JPS57198688A (en) 1981-06-01 1981-06-01 Semiconductor light emitting element

Country Status (1)

Country Link
JP (1) JPS57198688A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60242692A (en) * 1984-05-17 1985-12-02 Oki Electric Ind Co Ltd Light-emitting element and manufacture thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113588A (en) * 1974-07-24 1976-02-03 Hitachi Ltd

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113588A (en) * 1974-07-24 1976-02-03 Hitachi Ltd

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60242692A (en) * 1984-05-17 1985-12-02 Oki Electric Ind Co Ltd Light-emitting element and manufacture thereof

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