JPS57198678A - Optical semiconductor device - Google Patents
Optical semiconductor deviceInfo
- Publication number
- JPS57198678A JPS57198678A JP56082627A JP8262781A JPS57198678A JP S57198678 A JPS57198678 A JP S57198678A JP 56082627 A JP56082627 A JP 56082627A JP 8262781 A JP8262781 A JP 8262781A JP S57198678 A JPS57198678 A JP S57198678A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- type inp
- stripe
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/106—Comprising an active region having a varying composition or cross-section in a specific direction varying thickness along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Abstract
PURPOSE:To deflect a light beam along a stripe, by providing a step at the approximately central part of an active layer constituting the optical semiconductor device, forming a stripe region down to a half the step, and providing a light irradating window, which corresponding to the step, on the surface. CONSTITUTION:On an n type InP substrate 11, an n type InP confining layer 12 and an InGaAs active layer 13 are layered and epitaxially grown. Etching treatment is performed, and the layer 13 is transformed into a thin layer and a thick layer. The step 13a is formed at the point of thickness change. Then, a p type InP confining layer 14 and an n type InGaAsP cap layer 15 are grown on the entire surface including the step so as to obtain the flat surface. Cd, Zn, and the like are diffused from the surface of the layer 15, and a P type stripe region 16, whose lower end reaches a half the depth of the layer 14, is formed in the vicinity of the step. Then a positive electrode 17 is deposited on the layer 15. A light irradiating window 17a corresponding to the step 13a is provided along the region 16. A negative electrode 18 is deposited on the back surface of the substrate 11.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56082627A JPS57198678A (en) | 1981-05-30 | 1981-05-30 | Optical semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56082627A JPS57198678A (en) | 1981-05-30 | 1981-05-30 | Optical semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57198678A true JPS57198678A (en) | 1982-12-06 |
Family
ID=13779678
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56082627A Pending JPS57198678A (en) | 1981-05-30 | 1981-05-30 | Optical semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57198678A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01165189A (en) * | 1987-12-22 | 1989-06-29 | Canon Inc | Semiconductor laser |
US4892374A (en) * | 1988-03-03 | 1990-01-09 | American Telephone And Telegraph Company, At&T Bell Laboratories | Article comprising an opto-electronic device and an optical waveguide coupled thereto, and method of making the article |
EP1309050A1 (en) * | 2001-11-06 | 2003-05-07 | Agilent Technologies, Inc. (a Delaware corporation) | Laser device and method therefor |
-
1981
- 1981-05-30 JP JP56082627A patent/JPS57198678A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01165189A (en) * | 1987-12-22 | 1989-06-29 | Canon Inc | Semiconductor laser |
US4892374A (en) * | 1988-03-03 | 1990-01-09 | American Telephone And Telegraph Company, At&T Bell Laboratories | Article comprising an opto-electronic device and an optical waveguide coupled thereto, and method of making the article |
EP1309050A1 (en) * | 2001-11-06 | 2003-05-07 | Agilent Technologies, Inc. (a Delaware corporation) | Laser device and method therefor |
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