JPS5647568A - Plasma etching method - Google Patents
Plasma etching methodInfo
- Publication number
- JPS5647568A JPS5647568A JP12420779A JP12420779A JPS5647568A JP S5647568 A JPS5647568 A JP S5647568A JP 12420779 A JP12420779 A JP 12420779A JP 12420779 A JP12420779 A JP 12420779A JP S5647568 A JPS5647568 A JP S5647568A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- ccl
- less
- pressure
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To carry out the etching of an Al film on a silicon on silicon oxide layer by a method wherein CCl4 gas and Cl2 gas are mixed to form a gas plasma having a pressure ratio of Cl2/CCl4+Cl2 of a specific value or less and the etching is carried out under a high vacuum condition with a specific pressure.
CONSTITUTION: The pressure in a vacuum container 1 is reduced to 0.01 Torr or less by exhaust means 11 such as a rotary pump or the like and the CCl4 gas and the Cl2 gas are introduced respectively from gas introducing ports 2, 3 and the pressure ratio of Cl2/CCl4+Cl2 is regulated to 0.8 or less. Herein, high frequency electric power is applied and the gas plasma is formed by the glow discharge between electrodes 4, 5 to etch a sample 14 on the electrode 4.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12420779A JPS6056231B2 (en) | 1979-09-28 | 1979-09-28 | plasma etching method |
DE3030814A DE3030814C2 (en) | 1979-08-17 | 1980-08-14 | Process for plasma etching a workpiece |
US06/177,910 US4341593A (en) | 1979-08-17 | 1980-08-14 | Plasma etching method for aluminum-based films |
GB8026885A GB2059879B (en) | 1979-08-17 | 1980-08-18 | Plasma etching method for aluminumbased films |
FR8018069A FR2463976A1 (en) | 1979-08-17 | 1980-08-18 | PLASMA ETCHING PROCESS FOR ALUMINUM FILMS |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12420779A JPS6056231B2 (en) | 1979-09-28 | 1979-09-28 | plasma etching method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5647568A true JPS5647568A (en) | 1981-04-30 |
JPS6056231B2 JPS6056231B2 (en) | 1985-12-09 |
Family
ID=14879634
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12420779A Expired JPS6056231B2 (en) | 1979-08-17 | 1979-09-28 | plasma etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6056231B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61123141A (en) * | 1984-11-20 | 1986-06-11 | Fujitsu Ltd | Etching method |
-
1979
- 1979-09-28 JP JP12420779A patent/JPS6056231B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61123141A (en) * | 1984-11-20 | 1986-06-11 | Fujitsu Ltd | Etching method |
JPH0469812B2 (en) * | 1984-11-20 | 1992-11-09 | Fujitsu Ltd |
Also Published As
Publication number | Publication date |
---|---|
JPS6056231B2 (en) | 1985-12-09 |
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