JPS5647568A - Plasma etching method - Google Patents

Plasma etching method

Info

Publication number
JPS5647568A
JPS5647568A JP12420779A JP12420779A JPS5647568A JP S5647568 A JPS5647568 A JP S5647568A JP 12420779 A JP12420779 A JP 12420779A JP 12420779 A JP12420779 A JP 12420779A JP S5647568 A JPS5647568 A JP S5647568A
Authority
JP
Japan
Prior art keywords
gas
ccl
less
pressure
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12420779A
Other languages
Japanese (ja)
Other versions
JPS6056231B2 (en
Inventor
Takashi Yamazaki
Yasuhiro Horiike
Tetsuo Kurisaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Tokuda Seisakusho Co Ltd
Original Assignee
Toshiba Corp
Tokuda Seisakusho Co Ltd
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokuda Seisakusho Co Ltd, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12420779A priority Critical patent/JPS6056231B2/en
Priority to DE3030814A priority patent/DE3030814C2/en
Priority to US06/177,910 priority patent/US4341593A/en
Priority to GB8026885A priority patent/GB2059879B/en
Priority to FR8018069A priority patent/FR2463976A1/en
Publication of JPS5647568A publication Critical patent/JPS5647568A/en
Publication of JPS6056231B2 publication Critical patent/JPS6056231B2/en
Expired legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To carry out the etching of an Al film on a silicon on silicon oxide layer by a method wherein CCl4 gas and Cl2 gas are mixed to form a gas plasma having a pressure ratio of Cl2/CCl4+Cl2 of a specific value or less and the etching is carried out under a high vacuum condition with a specific pressure.
CONSTITUTION: The pressure in a vacuum container 1 is reduced to 0.01 Torr or less by exhaust means 11 such as a rotary pump or the like and the CCl4 gas and the Cl2 gas are introduced respectively from gas introducing ports 2, 3 and the pressure ratio of Cl2/CCl4+Cl2 is regulated to 0.8 or less. Herein, high frequency electric power is applied and the gas plasma is formed by the glow discharge between electrodes 4, 5 to etch a sample 14 on the electrode 4.
COPYRIGHT: (C)1981,JPO&Japio
JP12420779A 1979-08-17 1979-09-28 plasma etching method Expired JPS6056231B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP12420779A JPS6056231B2 (en) 1979-09-28 1979-09-28 plasma etching method
DE3030814A DE3030814C2 (en) 1979-08-17 1980-08-14 Process for plasma etching a workpiece
US06/177,910 US4341593A (en) 1979-08-17 1980-08-14 Plasma etching method for aluminum-based films
GB8026885A GB2059879B (en) 1979-08-17 1980-08-18 Plasma etching method for aluminumbased films
FR8018069A FR2463976A1 (en) 1979-08-17 1980-08-18 PLASMA ETCHING PROCESS FOR ALUMINUM FILMS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12420779A JPS6056231B2 (en) 1979-09-28 1979-09-28 plasma etching method

Publications (2)

Publication Number Publication Date
JPS5647568A true JPS5647568A (en) 1981-04-30
JPS6056231B2 JPS6056231B2 (en) 1985-12-09

Family

ID=14879634

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12420779A Expired JPS6056231B2 (en) 1979-08-17 1979-09-28 plasma etching method

Country Status (1)

Country Link
JP (1) JPS6056231B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61123141A (en) * 1984-11-20 1986-06-11 Fujitsu Ltd Etching method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61123141A (en) * 1984-11-20 1986-06-11 Fujitsu Ltd Etching method
JPH0469812B2 (en) * 1984-11-20 1992-11-09 Fujitsu Ltd

Also Published As

Publication number Publication date
JPS6056231B2 (en) 1985-12-09

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