JPS57192019A - Continuous heat treatment device - Google Patents

Continuous heat treatment device

Info

Publication number
JPS57192019A
JPS57192019A JP7653981A JP7653981A JPS57192019A JP S57192019 A JPS57192019 A JP S57192019A JP 7653981 A JP7653981 A JP 7653981A JP 7653981 A JP7653981 A JP 7653981A JP S57192019 A JPS57192019 A JP S57192019A
Authority
JP
Japan
Prior art keywords
reaction tube
wafers
shafts
heat treatment
treated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7653981A
Other languages
Japanese (ja)
Inventor
Keizo Inaba
Ichiro Takei
Kiyoshi Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7653981A priority Critical patent/JPS57192019A/en
Publication of JPS57192019A publication Critical patent/JPS57192019A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67115Apparatus for thermal treatment mainly by radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)

Abstract

PURPOSE:To subject uniform heat treatment to a material to be treated by continuously passing the material in a reaction tube by a transfer mechanism using a slot loosely fitting the material. CONSTITUTION:A heater 3 covered with a cover 2 consisting of a heat insulating material is arranged onto the outer circumferential section of the cylindrical reaction tube 1, both ends thereof are opened. Three shafts 7 for carrying are mounted into the reaction tube 1 in the longitudinal direction, and feed screws 8 are formed to the outer circumferences of the shafts 7. The fringe sections of semiconductor wafers 10 are loosely fitted into the slots 9 of the feed screws 8, the shafts 7 are turned by a driving source 11, and the wafers 10 are transferred to an outlet section 6 from the inlet section 5 of the reaction tube 1 at every one sheet. Accordingly, since the wafers 10 pass through a treating chamber 4 in the reaction tube 1 at every one sheet, the wafers are treated continuously while being thermally treated uniformly.
JP7653981A 1981-05-22 1981-05-22 Continuous heat treatment device Pending JPS57192019A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7653981A JPS57192019A (en) 1981-05-22 1981-05-22 Continuous heat treatment device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7653981A JPS57192019A (en) 1981-05-22 1981-05-22 Continuous heat treatment device

Publications (1)

Publication Number Publication Date
JPS57192019A true JPS57192019A (en) 1982-11-26

Family

ID=13608067

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7653981A Pending JPS57192019A (en) 1981-05-22 1981-05-22 Continuous heat treatment device

Country Status (1)

Country Link
JP (1) JPS57192019A (en)

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