JPS57191217A - Improving method for quality of silicon carbide - Google Patents
Improving method for quality of silicon carbideInfo
- Publication number
- JPS57191217A JPS57191217A JP56074890A JP7489081A JPS57191217A JP S57191217 A JPS57191217 A JP S57191217A JP 56074890 A JP56074890 A JP 56074890A JP 7489081 A JP7489081 A JP 7489081A JP S57191217 A JPS57191217 A JP S57191217A
- Authority
- JP
- Japan
- Prior art keywords
- material layer
- periphery
- layer
- mixed raw
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Carbon And Carbon Compounds (AREA)
Abstract
PURPOSE: To improve the quality of silicon carbide in high yield, by forming a mixed raw material layer on the peripheral side of a core, heating the periphery with a material layer for further refining, coating the periphery with a mixed raw material layer absorbing impurities, and further refining the material layers.
CONSTITUTION: A mixed raw material layer 12 consisting of quartzite and a carbonaceous reducing material is formed on the periphery to be in contact with a core part 11 made from a powdery or granular graphite in a thickness almost corresponding to a layer of decomposed SiC containing the decomposed remaining graphite formed from the temperature conditions given thereto necessary for further refining. A material layer for the further refining 13 in which the quality is improved is charged into the periphery of the layer 12, and the outside of the payer 13 is heated and coated with a mixed raw material layer 14 absorbing impurities. An electric current is applied to electrodes opposite the core part 11 and further refined in a furnace 15 to form an SiC layer of high purity from most of the layers 12 and 13.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56074890A JPS57191217A (en) | 1981-05-20 | 1981-05-20 | Improving method for quality of silicon carbide |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56074890A JPS57191217A (en) | 1981-05-20 | 1981-05-20 | Improving method for quality of silicon carbide |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57191217A true JPS57191217A (en) | 1982-11-25 |
JPH0118004B2 JPH0118004B2 (en) | 1989-04-03 |
Family
ID=13560412
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56074890A Granted JPS57191217A (en) | 1981-05-20 | 1981-05-20 | Improving method for quality of silicon carbide |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57191217A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59162115A (en) * | 1983-03-07 | 1984-09-13 | Shintou Unyu Kk | Preparation of molded article of silicon carbide having high density |
EP0222573A2 (en) * | 1985-11-05 | 1987-05-20 | Washington Mills Electro Minerals Corporation | Production of silicon carbide with automatic separation of a high grade fraction |
-
1981
- 1981-05-20 JP JP56074890A patent/JPS57191217A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59162115A (en) * | 1983-03-07 | 1984-09-13 | Shintou Unyu Kk | Preparation of molded article of silicon carbide having high density |
JPH0138041B2 (en) * | 1983-03-07 | 1989-08-10 | Shinto Unyu Kk | |
EP0222573A2 (en) * | 1985-11-05 | 1987-05-20 | Washington Mills Electro Minerals Corporation | Production of silicon carbide with automatic separation of a high grade fraction |
Also Published As
Publication number | Publication date |
---|---|
JPH0118004B2 (en) | 1989-04-03 |
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