JPS57191217A - Improving method for quality of silicon carbide - Google Patents

Improving method for quality of silicon carbide

Info

Publication number
JPS57191217A
JPS57191217A JP56074890A JP7489081A JPS57191217A JP S57191217 A JPS57191217 A JP S57191217A JP 56074890 A JP56074890 A JP 56074890A JP 7489081 A JP7489081 A JP 7489081A JP S57191217 A JPS57191217 A JP S57191217A
Authority
JP
Japan
Prior art keywords
material layer
periphery
layer
mixed raw
raw material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56074890A
Other languages
Japanese (ja)
Other versions
JPH0118004B2 (en
Inventor
Shiro Nagasawa
Hayayoshi Kawanori
Hiroshi Suzuki
Mitsuhiro Nishimura
Masuaki Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
YAKUSHIMA DENKO KK
YAKUSHIMA DENKOU KK
Original Assignee
YAKUSHIMA DENKO KK
YAKUSHIMA DENKOU KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by YAKUSHIMA DENKO KK, YAKUSHIMA DENKOU KK filed Critical YAKUSHIMA DENKO KK
Priority to JP56074890A priority Critical patent/JPS57191217A/en
Publication of JPS57191217A publication Critical patent/JPS57191217A/en
Publication of JPH0118004B2 publication Critical patent/JPH0118004B2/ja
Granted legal-status Critical Current

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Abstract

PURPOSE: To improve the quality of silicon carbide in high yield, by forming a mixed raw material layer on the peripheral side of a core, heating the periphery with a material layer for further refining, coating the periphery with a mixed raw material layer absorbing impurities, and further refining the material layers.
CONSTITUTION: A mixed raw material layer 12 consisting of quartzite and a carbonaceous reducing material is formed on the periphery to be in contact with a core part 11 made from a powdery or granular graphite in a thickness almost corresponding to a layer of decomposed SiC containing the decomposed remaining graphite formed from the temperature conditions given thereto necessary for further refining. A material layer for the further refining 13 in which the quality is improved is charged into the periphery of the layer 12, and the outside of the payer 13 is heated and coated with a mixed raw material layer 14 absorbing impurities. An electric current is applied to electrodes opposite the core part 11 and further refined in a furnace 15 to form an SiC layer of high purity from most of the layers 12 and 13.
COPYRIGHT: (C)1982,JPO&Japio
JP56074890A 1981-05-20 1981-05-20 Improving method for quality of silicon carbide Granted JPS57191217A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56074890A JPS57191217A (en) 1981-05-20 1981-05-20 Improving method for quality of silicon carbide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56074890A JPS57191217A (en) 1981-05-20 1981-05-20 Improving method for quality of silicon carbide

Publications (2)

Publication Number Publication Date
JPS57191217A true JPS57191217A (en) 1982-11-25
JPH0118004B2 JPH0118004B2 (en) 1989-04-03

Family

ID=13560412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56074890A Granted JPS57191217A (en) 1981-05-20 1981-05-20 Improving method for quality of silicon carbide

Country Status (1)

Country Link
JP (1) JPS57191217A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59162115A (en) * 1983-03-07 1984-09-13 Shintou Unyu Kk Preparation of molded article of silicon carbide having high density
EP0222573A2 (en) * 1985-11-05 1987-05-20 Washington Mills Electro Minerals Corporation Production of silicon carbide with automatic separation of a high grade fraction

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59162115A (en) * 1983-03-07 1984-09-13 Shintou Unyu Kk Preparation of molded article of silicon carbide having high density
JPH0138041B2 (en) * 1983-03-07 1989-08-10 Shinto Unyu Kk
EP0222573A2 (en) * 1985-11-05 1987-05-20 Washington Mills Electro Minerals Corporation Production of silicon carbide with automatic separation of a high grade fraction

Also Published As

Publication number Publication date
JPH0118004B2 (en) 1989-04-03

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