JPS57186358A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57186358A JPS57186358A JP7042681A JP7042681A JPS57186358A JP S57186358 A JPS57186358 A JP S57186358A JP 7042681 A JP7042681 A JP 7042681A JP 7042681 A JP7042681 A JP 7042681A JP S57186358 A JPS57186358 A JP S57186358A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- poly
- wiring
- substrate
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 7
- 239000000758 substrate Substances 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 230000010354 integration Effects 0.000 abstract 2
- 238000005275 alloying Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain an IC, the degree of integration thereof is high and which functions at high speed, by forming an electrode wiring layer in the multilayer constitution of poly Si and Al and doping the impurity of the same conduction type as the diffusion layer of a substrate to the connecting section of the diffusion layer of a substrate to the connecting section of the diffusion layer and poly Si. CONSTITUTION:An opening is forned to a SiO2 film 12 on an N type Si substrate 11 and a P layer 13 is shaped, and the wiring layers of poly Si 14 and Al 15 are formed. The P type impurity is diffused from the whole surface of diffused to poly Si from the P layer 13 in the opening section in the poly Si 14, and both the poly Si 14 and the P layer 13 are kept in the same conduction type. According to this constitution, even when the opening of the film 12 protrudes from the layer 13, the layer 13 can small be shaped because the direct alloying and short circuit of the upper Al wiring 15 with the Si substrate 11 can be avoided by the presence of the P type poly Si layer. Contact resistance does not increase in the contact of wiring and the layer 13 because both the wiring and the layer 13 are made of Si, both may be connected in minute size, and the IC, the degree of integration thereof is high and which functions at high speed, is obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7042681A JPS57186358A (en) | 1981-05-11 | 1981-05-11 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7042681A JPS57186358A (en) | 1981-05-11 | 1981-05-11 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57186358A true JPS57186358A (en) | 1982-11-16 |
Family
ID=13431134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7042681A Pending JPS57186358A (en) | 1981-05-11 | 1981-05-11 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57186358A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5115979A (en) * | 1974-07-31 | 1976-02-07 | Hitachi Ltd | HANDOTAISOCHINODENKYOKUKEISEIHO |
| JPS55125646A (en) * | 1979-03-20 | 1980-09-27 | Toshiba Corp | Semiconductor device |
-
1981
- 1981-05-11 JP JP7042681A patent/JPS57186358A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5115979A (en) * | 1974-07-31 | 1976-02-07 | Hitachi Ltd | HANDOTAISOCHINODENKYOKUKEISEIHO |
| JPS55125646A (en) * | 1979-03-20 | 1980-09-27 | Toshiba Corp | Semiconductor device |
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