JPS57186357A - Semiconductor element - Google Patents
Semiconductor elementInfo
- Publication number
- JPS57186357A JPS57186357A JP7039581A JP7039581A JPS57186357A JP S57186357 A JPS57186357 A JP S57186357A JP 7039581 A JP7039581 A JP 7039581A JP 7039581 A JP7039581 A JP 7039581A JP S57186357 A JPS57186357 A JP S57186357A
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- spike
- constitution
- substrate
- joining property
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 229910021364 Al-Si alloy Inorganic materials 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 101000617707 Homo sapiens Pregnancy-specific beta-1-glycoprotein 11 Proteins 0.000 abstract 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical group OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract 1
- 102100022023 Pregnancy-specific beta-1-glycoprotein 11 Human genes 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 238000007796 conventional method Methods 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To avoid an Al spike, and to improve even joining property by forming an electrode in the double layer structure of an Al-Si alloy and Al. CONSTITUTION:A window 15 is formed to an SiO2 12 and a PSG 13 on an Si substrate 1 with a junction 16, the Al-Si alloy 21 is sputtered, and Al 22 is evaporated through an electron beam method. The electrodes 22', 21' are shaped through selective etching by using a resist mask, and one part of the substrate 11 is alloyed 17 through heat treatment. According to this constitution, since the PSG13 is not removed by the etching liquid of a phosphoric acid group through a conventional method, and the junction section is made of the Al 22' and connected to a Si base body by the Al-Si alloy 21', the Al spike and the removal of the PSG film, etc. are not generated, and excellent joining property is obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7039581A JPS57186357A (en) | 1981-05-11 | 1981-05-11 | Semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7039581A JPS57186357A (en) | 1981-05-11 | 1981-05-11 | Semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57186357A true JPS57186357A (en) | 1982-11-16 |
Family
ID=13430212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7039581A Pending JPS57186357A (en) | 1981-05-11 | 1981-05-11 | Semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57186357A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6068614A (en) * | 1983-09-26 | 1985-04-19 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS63240368A (en) * | 1987-03-25 | 1988-10-06 | Nec Corp | Substrate potential generating circuit |
-
1981
- 1981-05-11 JP JP7039581A patent/JPS57186357A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6068614A (en) * | 1983-09-26 | 1985-04-19 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH0441510B2 (en) * | 1983-09-26 | 1992-07-08 | Fujitsu Ltd | |
| JPS63240368A (en) * | 1987-03-25 | 1988-10-06 | Nec Corp | Substrate potential generating circuit |
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