JPS5673469A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5673469A JPS5673469A JP15044079A JP15044079A JPS5673469A JP S5673469 A JPS5673469 A JP S5673469A JP 15044079 A JP15044079 A JP 15044079A JP 15044079 A JP15044079 A JP 15044079A JP S5673469 A JPS5673469 A JP S5673469A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode wiring
- mosi2
- coated
- patterned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910020968 MoSi2 Inorganic materials 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000002844 melting Methods 0.000 abstract 2
- 230000008018 melting Effects 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 239000003344 environmental pollutant Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000008595 infiltration Effects 0.000 abstract 1
- 238000001764 infiltration Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 231100000719 pollutant Toxicity 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To prevent the infiltration of pollutants such as Na<+>, etc. by a method wherein a high melting point metal film of Mo, etc. is patterned using a film in MoSi2 as a mask and the film in MoSi2 is left thereafter when the high melting point metal film is patterned and employed as electrode wiring. CONSTITUTION:A thick field insulating film 4 is formed around a P type Si substrate 1, a surface of the substrate 1 surrounded by the film 4 is coated with a thin gate insulating film 4G, an Mo film 5 functioning as electrode wiring is evaporated on the whole surface containing the film 4G by using electron beams, and a polycrystal Si film 6 containing N type impurities is deposited on the film 5. Thus, the Si film 6 is coated on the Mo film 5 and an MoSi2 film is formed, and gate electrode wiring consisting of an Mo film 5G and an Si film 6G is made up at a central section of the film 4G by means of etching by using a mask of a photoresist film 7. The film 7 is removed, an exposing surface of the electrode wiring and the both sides are coated with an SiO2 film 9, ions are injected, N<+> type source and drain regions 8S, 8D are built up, windows are formed, and Al electrodes 10S, 10D are attached.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15044079A JPS5673469A (en) | 1979-11-20 | 1979-11-20 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15044079A JPS5673469A (en) | 1979-11-20 | 1979-11-20 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5673469A true JPS5673469A (en) | 1981-06-18 |
Family
ID=15496970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15044079A Pending JPS5673469A (en) | 1979-11-20 | 1979-11-20 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5673469A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6279675A (en) * | 1985-10-02 | 1987-04-13 | Agency Of Ind Science & Technol | Compound semiconductor device |
| WO2006061369A1 (en) * | 2004-12-06 | 2006-06-15 | Infineon Technologies Ag | Semiconductor device and method of manufacture thereof |
| EP1798268A1 (en) | 2005-12-15 | 2007-06-20 | Dupont Powder Coatings France S.A.S. | Low gloss coil powder coating composition for coil coating |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54134579A (en) * | 1978-04-11 | 1979-10-19 | Nec Corp | Mis semiconductor device |
| JPS564273B2 (en) * | 1973-05-04 | 1981-01-29 |
-
1979
- 1979-11-20 JP JP15044079A patent/JPS5673469A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS564273B2 (en) * | 1973-05-04 | 1981-01-29 | ||
| JPS54134579A (en) * | 1978-04-11 | 1979-10-19 | Nec Corp | Mis semiconductor device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6279675A (en) * | 1985-10-02 | 1987-04-13 | Agency Of Ind Science & Technol | Compound semiconductor device |
| WO2006061369A1 (en) * | 2004-12-06 | 2006-06-15 | Infineon Technologies Ag | Semiconductor device and method of manufacture thereof |
| US7291526B2 (en) | 2004-12-06 | 2007-11-06 | Infineon Technologies Ag | Semiconductor device and method of manufacture thereof |
| US7576399B2 (en) | 2004-12-06 | 2009-08-18 | Infineon Technologies Ag | Semiconductor device and method of manufacture thereof |
| EP1798268A1 (en) | 2005-12-15 | 2007-06-20 | Dupont Powder Coatings France S.A.S. | Low gloss coil powder coating composition for coil coating |
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