JPS57186300A - Memory device - Google Patents

Memory device

Info

Publication number
JPS57186300A
JPS57186300A JP56071616A JP7161681A JPS57186300A JP S57186300 A JPS57186300 A JP S57186300A JP 56071616 A JP56071616 A JP 56071616A JP 7161681 A JP7161681 A JP 7161681A JP S57186300 A JPS57186300 A JP S57186300A
Authority
JP
Japan
Prior art keywords
circuit
data
reading
control signal
writing request
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56071616A
Other languages
Japanese (ja)
Inventor
Hiroshi Oota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56071616A priority Critical patent/JPS57186300A/en
Publication of JPS57186300A publication Critical patent/JPS57186300A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals

Landscapes

  • Detection And Correction Of Errors (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

PURPOSE:To obtain the titled device which can easily retrieve any defect, by configuring the device in such a way that the device can check any data error even when a writing request or a partial writing request is made by reading out data written in the memory during the memory cycle time. CONSTITUTION:A reading control signal generating circuit 11 can be driven by a writing request signal or a partial writing request signal when delay circuits 19 and 20 are added to the circuit 11. A reading request signal drives an address control signal generating circuit 10, and the reading request signal passed through an OR circuit 18, a delay circuit 13, and another OR circuit 21 drives the reading control signal generating circuit 11 and this signal is generated after the address control signal is generated. After this, data in a memory area read out, the read out data are planted in a data register, and the data are checked at a data checking circuit.
JP56071616A 1981-05-13 1981-05-13 Memory device Pending JPS57186300A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56071616A JPS57186300A (en) 1981-05-13 1981-05-13 Memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56071616A JPS57186300A (en) 1981-05-13 1981-05-13 Memory device

Publications (1)

Publication Number Publication Date
JPS57186300A true JPS57186300A (en) 1982-11-16

Family

ID=13465752

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56071616A Pending JPS57186300A (en) 1981-05-13 1981-05-13 Memory device

Country Status (1)

Country Link
JP (1) JPS57186300A (en)

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