JPS57176771A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS57176771A
JPS57176771A JP6291381A JP6291381A JPS57176771A JP S57176771 A JPS57176771 A JP S57176771A JP 6291381 A JP6291381 A JP 6291381A JP 6291381 A JP6291381 A JP 6291381A JP S57176771 A JPS57176771 A JP S57176771A
Authority
JP
Japan
Prior art keywords
ultraviolet rays
film
transmitted
memory device
property
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6291381A
Other languages
Japanese (ja)
Inventor
Yoshihiro Osada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6291381A priority Critical patent/JPS57176771A/en
Publication of JPS57176771A publication Critical patent/JPS57176771A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To obtain a memory element having excellent surface protecting property, by providing a double layer structure comprising a first layer through which ultraviolet rays are transmitted and a second film through which the ultraviolet rays are not transmitted but which has the excellent surface protecting property, as a surface protrecting film, and removing the parts of the second film which are required to irradiate the ultraviolet rays. CONSTITUTION:In a floating gate type memory device, an SiO2 film 8 through which the ultraviolet rays are transmitted in order to erase the charge in the floating gate and an Si3N4 film 9 through which the ultraviolet rays are not transmitted but which has the excellent surface protrecting property are deposited on the entire surface. The specified parts of the Si3N4 film are selectively removed so that the ultraviolet rays can be transmitted. In this constitution, the function as the memory device is accomplished and the surface protecting characteristic becomes excellent.
JP6291381A 1981-04-23 1981-04-23 Semiconductor memory device Pending JPS57176771A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6291381A JPS57176771A (en) 1981-04-23 1981-04-23 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6291381A JPS57176771A (en) 1981-04-23 1981-04-23 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS57176771A true JPS57176771A (en) 1982-10-30

Family

ID=13213962

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6291381A Pending JPS57176771A (en) 1981-04-23 1981-04-23 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS57176771A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7311385B2 (en) 2003-11-12 2007-12-25 Lexmark International, Inc. Micro-fluid ejecting device having embedded memory device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5544742A (en) * 1978-09-26 1980-03-29 Fujitsu Ltd Manufacture of semiconductor device
JPS5619675A (en) * 1979-07-25 1981-02-24 Toshiba Corp Nonvolatile semiconductor memory device
JPS56120167A (en) * 1980-02-26 1981-09-21 Sanyo Electric Co Ltd Insulation gate type field-effect semiconductor device having floating gate electrode

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5544742A (en) * 1978-09-26 1980-03-29 Fujitsu Ltd Manufacture of semiconductor device
JPS5619675A (en) * 1979-07-25 1981-02-24 Toshiba Corp Nonvolatile semiconductor memory device
JPS56120167A (en) * 1980-02-26 1981-09-21 Sanyo Electric Co Ltd Insulation gate type field-effect semiconductor device having floating gate electrode

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7311385B2 (en) 2003-11-12 2007-12-25 Lexmark International, Inc. Micro-fluid ejecting device having embedded memory device
US7673973B2 (en) 2003-11-12 2010-03-09 Lexmark Internatinoal, Inc. Micro-fluid ejecting device having embedded memory devices
US7954929B2 (en) 2003-11-12 2011-06-07 Lexmark International, Inc. Micro-fluid ejecting device having embedded memory in communication with an external controller

Similar Documents

Publication Publication Date Title
JPS53124084A (en) Semiconductor memory device containing floating type poly silicon layer and its manufacture
JPS57157573A (en) Semiconductor non-volatile memory cell
IL59060A0 (en) Substrate coupled floating gate memory cell
JPS5642377A (en) Ultraviolet ray erasable type rewritable read-only memory
AT387105B (en) SEMICONDUCTOR ARRANGEMENT WITH REDUCED SURFACE FIELD THICKNESS
JPS5728364A (en) Semiconductor memory device
NO811645L (en) DEVICE FOR THE DISTRIBUTION OF FLUID IN THIN FILM.
JPS5642375A (en) Semiconductor nonvolatile memory
AU504667B2 (en) Semiconductor device with passivating layer
JPS57141969A (en) Nonvolatile semiconductor memory
JPS5365066A (en) Semiconductor device
JPS53123687A (en) Binary memory element
DE3165313D1 (en) Semiconductor memory device with substrate voltage biasing
JPS5759386A (en) Silicide layer exfoliating technique on silicon
DE3163572D1 (en) Semiconductor inversion layer transistor
JPS57176771A (en) Semiconductor memory device
JPS5519820A (en) Semiconductor device
DE3174565D1 (en) NON-VOLATILE STATIC SEMICONDUCTOR MEMORY CELL
JPS52115663A (en) Semiconductor device
NL178304B (en) BUOY WITH FLOATING DEVICE.
JPS5228277A (en) Non-voltatile semiconductor memory device
JPS54974A (en) Manufacture for semiconductor device
JPS6428869A (en) Semiconductor device
JPS57111884A (en) Semiconductor storage device
JPS5759387A (en) Semiconductor storage device